Abstract: An optical filter and a matching composite layer thereof are provided. The matching composite layer includes a plurality of first refraction layers, a plurality of second refraction layers, and a plurality of third refraction layers. A refractive index of the second refraction layer is greater than that of the first refraction layer, and is less than that of the third refraction layer. Any two of the second refraction layers provided with one of the first refraction layers sandwiched there-between are sandwiched between two of the third refraction layers so as to be jointly defined as a bidirectional incremental module. A number of the bidirectional incremental module included in the matching composite layer is at least M, where M is a positive integer greater than three. The M number of the bidirectional incremental modules are stacked and connected with each other.

Abstract: An optical filter includes a substrate, an adhesion layer formed on the substrate, and a matching composite layer formed on the adhesion layer and including a plurality of first refraction layers, a plurality of second refraction layers, and a plurality of third refraction layers. A quantity of the second refraction layers is less than that of the first refraction layers, and is less than that of the third refraction layers. A refractive index of the first refraction layer is greater than that of the adhesion layer. A refractive index of the second refraction layer is greater than that of the first refraction layer, and is less than that of the third refraction layer. Two of the second refraction layers sandwich one of the first refraction layers therebetween, and are sandwiched between two of the third refraction layers, so as to be jointly defined as a bidirectional incremental module.

Abstract: An ion implanter is provided having an ion source; an AMU analyzing magnet having a fixed radius Ram; an ion extraction voltage source; a communication interface for monitoring implantation parameters; and an equipment server having a data log. The ion implanter further has an arithmetic processor capable of determining a real-time estimated radius Re of a circular path of ions being implanted into a target wafer. A method of using the ion implanter provide an interlock on an AMU of each of a plurality of ions being implanted into the target wafer. The method has the step of determining in real-time if an ion implanter is implanting a desired ion into a target wafer. Also, the method determines if an absolute value of an offset between the Ram and Re exceeds a predetermined radius tolerance level L and adjusts the implanter accordingly if L is exceeded.

Abstract: An ion implanter is provided having an ion source; an AMU analyzing magnet having a fixed radius Ram; an ion extraction voltage source; a communication interface for monitoring implantation parameters; and an equipment server having a data log. The ion implanter further has an arithmetic processor capable of determining a real-time estimated radius Re of a circular path of ions being implanted into a target wafer. A method of using the ion implanter provide an interlock on an AMU of each of a plurality of ions being implanted into the target wafer. The method has the step of determining in real-time if an ion implanter is implanting a desired ion into a target wafer. Also, the method determines if an absolute value of an offset between the Ram and Re exceeds a predetermined radius tolerance level L and adjusts the implanter accordingly if L is exceeded.