Patents by Inventor Chi Chieh Yeh

Chi Chieh Yeh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METAL GATE STRESS FILM FOR MOBILITY ENHANCEMENT IN FinFET DEVICE
    Publication number: 20110169085
    Abstract: A CMOS FinFET semiconductor device provides an NMOS FinFET device that includes a compressive stress metal gate layer over semiconductor fins and a PMOS FinFET device that includes a tensile stress metal gate layer over semiconductor fins. A process for forming the same includes a selective annealing process that selectively converts a compressive metal gate film formed over the PMOS device to the tensile stress metal gate film.
    Type: Application
    Filed: March 4, 2011
    Publication date: July 14, 2011
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jeff J. Xu, Clement H. Wann, Chi Chieh Yeh, Chi-Sheng Chang
  • Metal gate stress film for mobility enhancement in FinFET device
    Patent number: 7915112
    Abstract: A CMOS FinFET semiconductor device provides an NMOS FinFET device that includes a compressive stress metal gate layer over semiconductor fins and a PMOS FinFET device that includes a tensile stress metal gate layer over semiconductor fins. A process for forming the same includes a selective annealing process that selectively converts a compressive metal gate film formed over the PMOS device to the tensile stress metal gate film.
    Type: Grant
    Filed: September 23, 2008
    Date of Patent: March 29, 2011
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jeff J. Xu, Clement H. Wann, Chi Chieh Yeh, Chi-Sheng Chang