Patents by Inventor Chi Chieh Yeh

Chi Chieh Yeh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200357885
    Abstract: Transistor structures and methods of forming transistor structures are provided. The transistor structures include alternating layers of a first epitaxial material and a second epitaxial material. In some embodiments, one of the first epitaxial material and the second epitaxial material may be removed for one of an n-type or p-type transistor. A bottommost layer of the first epitaxial material and the second epitaxial material maybe be removed, and sidewalls of one of the first epitaxial material and the second epitaxial material may be indented or recessed.
    Type: Application
    Filed: July 27, 2020
    Publication date: November 12, 2020
    Inventors: Cheng-Yi Peng, Hung-Li Chiang, Yu-Lin Yang, Chih Chieh Yeh, Yee-Chia Yeo, Chi-Wen Liu
  • Patent number: 10825907
    Abstract: A semiconductor device and a method of forming the semiconductor device is disclosed. A sacrificial film is used to pattern a contact to a semiconductor structure, such as a contact to a source/drain region of a transistor. The contact may include a tapered profile along an axis parallel to the gate electrode such that an outermost width of the contact decreases as the contact extends away from the source/drain region.
    Type: Grant
    Filed: July 30, 2018
    Date of Patent: November 3, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tung Ying Lee, Chih Chieh Yeh, Jeng-Ya David Yeh, Yuan-Hung Chiu, Chi-Wen Liu, Yee-Chia Yeo
  • Publication number: 20200292157
    Abstract: A light-emitting device including a substrate with a top surface and a bottom surface opposite to the top surface and a plurality of LED chips disposed on the top surface and configured to generate a top light visible above the top surface and a bottom light visible beneath the bottom surface, each LED chip comprising a plurality of light-emitting surfaces. The substrate has a thickness greater than 200 ?m and comprises aluminum oxide, sapphire, glass, plastic, or rubber. The plurality of LED chips has an incident light with a wavelength of 420-470 nm. The top light and the bottom light have a color temperature difference of not greater than 1500K.
    Type: Application
    Filed: May 29, 2020
    Publication date: September 17, 2020
    Inventors: CHI-CHIH PU, CHEN-HONG LEE, SHIH-YU YEH, WEI-KANG CHENG, SHYI-MING PAN, SIANG-FU HONG, CHIH-SHU HUANG, TZU-HSIANG WANG, SHIH-CHIEH TANG, CHENG-KUANG YANG
  • Patent number: 10727298
    Abstract: Transistor structures and methods of forming transistor structures are provided. The transistor structures include alternating layers of a first epitaxial material and a second epitaxial material. In some embodiments, one of the first epitaxial material and the second epitaxial material may be removed for one of an n-type or p-type transistor. A bottommost layer of the first epitaxial material and the second epitaxial material maybe be removed, and sidewalls of one of the first epitaxial material and the second epitaxial material may be indented or recessed.
    Type: Grant
    Filed: December 20, 2019
    Date of Patent: July 28, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng-Yi Peng, Hung-Li Chiang, Yu-Lin Yang, Chih Chieh Yeh, Yee-Chia Yeo, Chi-Wen Liu
  • Publication number: 20200190605
    Abstract: The invention relates to a detective molecule, and more particularly to a detective molecule and a kit for detecting a target molecule, a method for predicting fragrance production in an orchid, and a method for breeding a scented orchid.
    Type: Application
    Filed: December 17, 2018
    Publication date: June 18, 2020
    Inventors: HONG-HWA CHEN, YU-CHEN CHUANG, WEN-CHIEH TSAI, YI-CHU HUNG, WEN-HUEI CHEN, CHI-YU HSU, CHUAN-MING YEH, NOBUTAKA MITSUDA, MASARU OHME-TAKAGI
  • Patent number: 10670244
    Abstract: The present invention relates to a light emitting device comprising a transparent substrate which light can pass through and at least one LED chip emitting light omni-directionally. Wherein the LED chip is disposed on one surface of the substrate and the light emitting angle of the LED chip is wider than 180°, and the light emitted by the LED chip will penetrate into the substrate and at least partially emerge from another surface of the substrate. According to the present invention, the light emitting device using LED chips can provide sufficient lighting intensity and uniform lighting performance.
    Type: Grant
    Filed: March 26, 2019
    Date of Patent: June 2, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Chi-Chih Pu, Chen-Hong Lee, Shih-Yu Yeh, Wei-Kang Cheng, Shyi-Ming Pan, Siang-Fu Hong, Chih-Shu Huang, Tzu-Hsiang Wang, Shih-Chieh Tang, Cheng-Kuang Yang
  • Patent number: 10673813
    Abstract: The present invention provides a method for NAT traversal in VPN so that the VPN can detect the rule of port allocation for NAT outside the VPN to achieve NAT traversal. The communication structure according to the present invention includes a public network, a client network, a destination network, a first NAT, a second NAT. A DNAT-T proxy server is installed between the first NAT and the second NAT and has the function for the VPN to conduct a plurality of (N times) registrations before sending data out to detect the rule for NAT port allocation of the DNAT-T proxy server, and then inform the next NAT port allocation to the other side of the VPN so as to achieve NAT traversal for the data packets in VPN.
    Type: Grant
    Filed: February 1, 2018
    Date of Patent: June 2, 2020
    Assignee: NATIONAL CHIAO TUNG UNIVERSITY
    Inventors: Hsueh Ming Hang, Shaw Hwa Hwang, Cheng Yu Yeh, Bing Chih Yao, Kuan Lin Chen, Yao Hsing Chung, Shun Chieh Chang, Chi Jung Huang, Li Te Shen, Ning Yun Ku, Tzu Hung Lin, Ming Che Yeh
  • Publication number: 20200135854
    Abstract: Transistor structures and methods of forming transistor structures are provided. The transistor structures include alternating layers of a first epitaxial material and a second epitaxial material. In some embodiments, one of the first epitaxial material and the second epitaxial material may be removed for one of an n-type or p-type transistor. A bottommost layer of the first epitaxial material and the second epitaxial material maybe be removed, and sidewalls of one of the first epitaxial material and the second epitaxial material may be indented or recessed.
    Type: Application
    Filed: December 20, 2019
    Publication date: April 30, 2020
    Inventors: Cheng-Yi Peng, Hung-Li Chiang, Yu-Lin Yang, Chih Chieh Yeh, Yee-Chia Yeo, Chi-Wen Liu
  • Patent number: 10535732
    Abstract: Transistor structures and methods of forming transistor structures are provided. The transistor structures include alternating layers of a first epitaxial material and a second epitaxial material. In some embodiments, one of the first epitaxial material and the second epitaxial material may be removed for one of an n-type or p-type transistor. A bottommost layer of the first epitaxial material and the second epitaxial material maybe be removed, and sidewalls of one of the first epitaxial material and the second epitaxial material may be indented or recessed.
    Type: Grant
    Filed: November 20, 2017
    Date of Patent: January 14, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng-Yi Peng, Hung-Li Chiang, Yu-Lin Yang, Chih Chieh Yeh, Yee-Chia Yeo, Chi-Wen Liu
  • Patent number: 10433368
    Abstract: A communications apparatus includes a radio transceiver and a processor. The radio transceiver is configured for transmitting or receiving wireless radio frequency signals to or from a peer device. The processor determines whether re-synchronization in a communication mode with the peer device is required according to a determination rule. When the re-synchronization is required, the processor transmits a message to the peer device via the radio transceiver to trigger a re-synchronization procedure. The processor determines whether the re-synchronization is required in a connected mode.
    Type: Grant
    Filed: November 18, 2015
    Date of Patent: October 1, 2019
    Assignee: MEDIATEK INC.
    Inventors: Shih-Hsin Chien, Chi-Chen Lee, Wen-Jiunn Liu, Ching-Yueh Kao, Shih-Chieh Liao, Yu-Tien Yeh, Sian-Jheng Wong, Tien-Yi Huang
  • Publication number: 20190238503
    Abstract: The present invention provides a method for NAT traversal in VPN so that the VPN can detect the rule of port allocation for NAT outside the VPN to achieve NAT traversal. The communication structure according to the present invention includes a public network, a client network, a destination network, a first NAT, a second NAT. A DNAT-T proxy server is installed between the first NAT and the second NAT and has the function for the VPN to conduct a plurality of (N times) registrations before sending data out to detect the rule for NAT port allocation of the DNAT-T proxy server, and then inform the next NAT port allocation to the other side of the VPN so as to achieve NAT traversal for the data packets in VPN.
    Type: Application
    Filed: February 1, 2018
    Publication date: August 1, 2019
    Inventors: Hsueh Ming HANG, Shaw Hwa HWANG, Cheng Yu YEH, Bing Chih YAO, Kuan Lin CHEN, Yao Hsing CHUNG, Shun Chieh CHANG, Chi Jung HUANG, Li Te SHEN, Ning Yun KU, Tzu Hung LIN, Ming Che YEH
  • Publication number: 20190219252
    Abstract: The present invention relates to a light emitting device comprising a transparent substrate which light can pass through and at least one LED chip emitting light omni-directionally. Wherein the LED chip is disposed on one surface of the substrate and the light emitting angle of the LED chip is wider than 180°, and the light emitted by the LED chip will penetrate into the substrate and at least partially emerge from another surface of the substrate. According to the present invention, the light emitting device using LED chips can provide sufficient lighting intensity and uniform lighting performance.
    Type: Application
    Filed: March 26, 2019
    Publication date: July 18, 2019
    Inventors: CHI-CHIH PU, CHEN-HONG LEE, SHIH-YU YEH, WEI-KANG CHENG, SHYI-MING PAN, SIANG-FU HONG, CHIH-SHU HUANG, TZU-HSIANG WANG, SHIH-CHIEH TANG, CHENG-KUANG YANG
  • Publication number: 20110169085
    Abstract: A CMOS FinFET semiconductor device provides an NMOS FinFET device that includes a compressive stress metal gate layer over semiconductor fins and a PMOS FinFET device that includes a tensile stress metal gate layer over semiconductor fins. A process for forming the same includes a selective annealing process that selectively converts a compressive metal gate film formed over the PMOS device to the tensile stress metal gate film.
    Type: Application
    Filed: March 4, 2011
    Publication date: July 14, 2011
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jeff J. Xu, Clement H. Wann, Chi Chieh Yeh, Chi-Sheng Chang
  • Patent number: 7915112
    Abstract: A CMOS FinFET semiconductor device provides an NMOS FinFET device that includes a compressive stress metal gate layer over semiconductor fins and a PMOS FinFET device that includes a tensile stress metal gate layer over semiconductor fins. A process for forming the same includes a selective annealing process that selectively converts a compressive metal gate film formed over the PMOS device to the tensile stress metal gate film.
    Type: Grant
    Filed: September 23, 2008
    Date of Patent: March 29, 2011
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jeff J. Xu, Clement H. Wann, Chi Chieh Yeh, Chi-Sheng Chang