Abstract: An LDMOS transistor with a dummy gate comprises an extended drift region over a substrate, a drain region in the extended drift region, a channel region in the extended drift region, a source region in the channel region, a first dielectric layer with a first thickness formed over the extended drift region, a second dielectric layer with a second thickness formed over the extended drift region and the channel region, wherein the first thickness is greater than the second thickness, and wherein the first dielectric layer and the second dielectric layer form two steps, a first gate formed over the first dielectric layer and a second gate formed above the second dielectric layer.

Abstract: An apparatus and device for repetitive use in automotive testing is provided. The apparatus includes a frame dimensioned in the same shape as a bicycle frame. The frame includes a first support beam and a plurality of second support beams. The apparatus further includes an elastic member elastically coupling each of the plurality of second support beams to the first support beam so as to allow the frame to separate when impacted and be easily reassembled for further testing. The device includes a disk having a first radar transparent layer opposite a second radar transparent layer and a reflective film disposed between the first radar transparent layer and the second radar transparent layer. The reflective film has a radar cross section pattern similar to that of an actual bicycle wheel when seen by automotive radar.

Abstract: A MOSFET includes a semiconductor substrate having a top surface, a body region of a first conductivity type in the semiconductor substrate, and a double diffused drain (DDD) region having a top surface lower than a bottom surface of the body region. The DDD region is of a second conductivity type opposite the first conductivity type. The MOSFET further includes a gate oxide, and a gate electrode separated from the body region by the gate oxide. A portion of the gate oxide and a portion of the gate electrode are below the top surface of the body region.

Abstract: An example ultra-wideband (“UWB”) multiple-input multiple-output (“MIMO”) antenna operating across a continuous, wide-range frequency band can include a ground plane, a wideband monopole antenna arranged over the ground plane, and a ring antenna arranged over the ground plane and around the wideband monopole antenna. The ring antenna can include a plurality of pairs of dipole antennas, where these dipole pairs are configured for symmetric, out-of-phase coupling with the wideband monopole antenna. The wideband monopole antenna and the ring antenna can also be configured to generate respective electric fields having orthogonal polarizations.

Abstract: A semiconductor device and the method of manufacturing the same are provided. The semiconductor device includes a substrate, a source region, a drain region, a filed plate and a gate electrode. The source region is of a first conductivity type located at a first side within the substrate. The drain region is of the first conductive type located at a second side within the substrate opposite to the first side. The field plate is located over the substrate and between the source region and the drain region. A portion of the gate electrode is located over the field plate.

Abstract: An LDMOS transistor with a dummy gate comprises an extended drift region over a substrate, a drain region in the extended drift region, a channel region in the extended drift region, a source region in the channel region, a first dielectric layer with a first thickness formed over the extended drift region, a second dielectric layer with a second thickness formed over the extended drift region and the channel region, wherein the first thickness is greater than the second thickness, and wherein the first dielectric layer and the second dielectric layer form two steps, a first gate formed over the first dielectric layer and a second gate formed above the second dielectric layer.

Abstract: An apparatus and device for repetitive use in automotive testing is provided. The apparatus includes a frame dimensioned in the same shape as a bicycle frame. The frame includes a first support beam and a plurality of second support beams. The apparatus further includes an elastic member elastically coupling each of the plurality of second support beams to the first support beam so as to allow the frame to separate when impacted and be easily reassembled for further testing. The device includes a disk having a first radar transparent layer opposite a second radar transparent layer and a reflective film disposed between the first radar transparent layer and the second radar transparent layer. The reflective film has a radar cross section pattern similar to that of an actual bicycle wheel when seen by automotive radar.

Abstract: A harmonic harvesting circuit design for harvesting un-rectified AC power contained in the fundamental and harmonic frequencies at the output of conventional rectifying circuits.

Abstract: An LDMOS transistor with a dummy gate comprises an extended drift region formed over a substrate, a drain region formed in the extended drift region, a channel region formed in the extended drift region, a source region formed in the channel region and a dielectric layer formed over the extended drift region. The LDMOS transistor with a dummy gate further comprises an active gate formed over the channel region and a dummy gate formed over the extended drift region. The dummy gate helps to reduce the gate charge of the LDMOS transistor while maintaining the breakdown voltage of the LDMOS transistor.

Abstract: An antenna structure comprising a dielectric substrate layer and a patch layer laminated on top of the dielectric substrate layer, wherein the antenna structure is adapted to provide dual band coverage by combining a patch mode and a slot mode configuration.

Abstract: A very low profile wideband antenna adapted to operate from 30 MHz to 300 MHz or in another desired range. The maximum diameter and height of one embodiment of this antenna is only 60.96 cm and 5.08 cm, respectively. This design is comprised of a fat grounded metallic plate placed 5.08 cm over a ground plane. In one embodiment, ferrite loading strategically placed between the plate and ground plane improves the low frequency gain and the pattern at high frequencies. A minimal amount of ferrite may be used to keep weight low.

Abstract: A system and method for self-harvesting energy from a wireless device and supplementing the battery power of the wireless device using the self-harvested energy includes the steps of collecting at least a portion of radio frequency signals transmitted by the wireless device; converting the collected radio frequency signals from radio frequency signals to direct current energy; further converting the direct current energy to energy compatible with charging requirements for a battery electrically connected to the wireless device; and transferring the compatible energy to the battery of the wireless device through a wireless device interface in order to add the compatible energy to the battery.

Abstract: An artificial skin for use on a radar mannequin exposed to electromagnetic radiation having a predetermined frequency and a radar mannequin having the artificial skin are provided. The artificial skin and the radar mannequin with the artificial skin are configured to produce a radar cross section that closely approximates the radar cross section of a human. The artificial skin includes a conductive layer of material and a shielding layer of material. The conductive layer and the shielding layer are configured to reflect electromagnetic radiation at a level of an electromagnetic response of human skin exposed to the electromagnetic radiation. The shielding layer also electromagnetically shields an inside surface of the artificial skin from electromagnetic radiation.

Abstract: An example ultra-wideband (“UWB”) multiple-input multiple-output (“MIMO”) antenna operating across a continuous, wide-range frequency band can include a ground plane, a wideband monopole antenna arranged over the ground plane, and a ring antenna arranged over the ground plane and around the wideband monopole antenna. The ring antenna can include a plurality of pairs of dipole antennas, where these dipole pairs are configured for symmetric, out-of-phase coupling with the wideband monopole antenna. The wideband monopole antenna and the ring antenna can also be configured to generate respective electric fields having orthogonal polarizations.

Abstract: An artificial skin for use on a radar mannequin exposed to electromagnetic radiation having a predetermined frequency and a radar mannequin having the artificial skin are provided. The artificial skin and the radar mannequin with the artificial skin are configured to produce a radar cross section that closely approximates the radar cross section of a human. The artificial skin includes a conductive layer of material and a shielding layer of material. The conductive layer and the shielding layer are configured to reflect electromagnetic radiation at a level of an electromagnetic response of human skin exposed to the electromagnetic radiation. The shielding layer also electromagnetically shields an inside surface of the artificial skin from electromagnetic radiation.

Abstract: A very low profile wideband antenna adapted to operate from 30 MHz to 300 MHz or in another desired range. The maximum diameter and height of one embodiment of this antenna is only 60.96 cm and 5.08 cm, respectively. This design is comprised of a fat grounded metallic plate placed 5.08 cm over a ground plane. In one embodiment, ferrite loading strategically placed between the plate and ground plane improves the low frequency gain and the pattern at high frequencies. A minimal amount of ferrite may be used to keep weight low.

Abstract: An antenna structure comprising a dielectric substrate layer and a patch layer laminated on top of the dielectric substrate layer, wherein the antenna structure is adapted to provide dual band coverage by combining a patch mode and a slot mode configuration.

Abstract: A high voltage (HV) device includes a gate dielectric structure over a substrate. The gate dielectric structure has a first portion and a second portion. The first portion has a first thickness and is over a first well region of a first dopant type in the substrate. The second portion has a second thickness and is over a second well region of a second dopant type. The first thickness is larger than the second thickness. A gate electrode is disposed over the gate dielectric structure. A metallic layer is over and coupled with the gate electrode. The metallic layer extends along a direction of a channel under the gate dielectric structure. At least one source/drain (S/D) region is disposed within the first well region of the first dopant type.

Abstract: An LDMOS transistor with a dummy gate comprises an extended drift region formed over a substrate, a drain region formed in the extended drift region, a channel region formed in the extended drift region, a source region formed in the channel region and a dielectric layer formed over the extended drift region. The LDMOS transistor with a dummy gate further comprises an active gate formed over the channel region and a dummy gate formed over the extended drift region. The dummy gate helps to reduce the gate charge of the LDMOS transistor while maintaining the breakdown voltage of the LDMOS transistor.

Abstract: A MOSFET includes a semiconductor substrate having a top surface, a body region of a first conductivity type in the semiconductor substrate, and a double diffused drain (DDD) region having a top surface lower than a bottom surface of the body region. The DDD region is of a second conductivity type opposite the first conductivity type. The MOSFET further includes a gate oxide, and a gate electrode separated from the body region by the gate oxide. A portion of the gate oxide and a portion of the gate electrode are below the top surface of the body region.