Abstract: A light-emitting device includes a substrate including a top surface; a semiconductor stack including a first semiconductor layer, an active layer and a second semiconductor layer formed on the substrate, wherein a portion of the top surface is exposed; a distributed Bragg reflector (DBR) formed on the semiconductor stack and contacting the portion of the top surface of the substrate; a metal layer formed on the distributed Bragg reflector (DBR), contacting the portion of the top surface of the substrate and being insulated with the semiconductor stack; and an insulation layer formed on the metal layer and contacting the portion of the top surface of the substrate.

Abstract: A flash memory device and method of making the same are disclosed. The flash memory device is located on a substrate and includes a floating gate electrode, a tunnel dielectric layer located between the substrate and the floating gate electrode, a smaller length control gate electrode and a control gate dielectric layer located between the floating gate electrode and the smaller length control gate electrode. The length of a major axis of the smaller length control gate electrode is less than a length of a major axis of the floating gate electrode.

Abstract: Exemplary subpixel structures include a directional light-emitting diode structure characterized by a full-width-half-maximum (FWHM) of emitted light having a divergence angle of less than or about 10°. The subpixel structure further includes a lens positioned a first distance from the light-emitting diode structure, where the lens is shaped to focus the emitted light from the light-emitting diode structure. The subpixel structure still further includes a patterned light absorption barrier positioned a second distance from the lens. The patterned light absorption barrier defines an opening in the barrier, and the focal point of the light focused by the lens is positioned within the opening. The subpixels structures may be incorporated into a pixel structure, and pixel structures may be incorporated into a display that is free of a polarizer layer.

Abstract: The present disclosure is generally related to 3D imaging capable OLED displays. A light field display comprises an array of 3D light field pixels, each of which comprises an array of corrugated OLED pixels, a metasurface layer disposed adjacent to the array of 3D light field pixels, and a plurality of median layers disposed between the metasurface layer and the corrugated OLED pixels. Each of the corrugated OLED pixels comprises primary or non-primary color subpixels, and produces a different view of an image through the median layers to the metasurface to form a 3D image. The corrugated OLED pixels combined with a cavity effect reduce a divergence of emitted light to enable effective beam direction manipulation by the metasurface. The metasurface having a higher refractive index and a smaller filling factor enables the deflection and direction of the emitted light from the corrugated OLED pixels to be well controlled.

Abstract: The present disclosure relates to an integrated chip. The integrated chip includes a substrate having one or more interior surfaces forming a recess within an upper surface of the substrate. Source/drain regions are disposed within the substrate on opposing sides of the recess. A first gate dielectric is arranged along the one or more interior surfaces forming the recess, and a second gate dielectric is arranged on the first gate dielectric and within the recess. A gate electrode is disposed on the second gate dielectric. The second gate dielectric includes one or more protrusions that extend outward from a recessed upper surface of the second gate dielectric and that are arranged along opposing sides of the second gate dielectric.

Abstract: An integrated circuit package including integrated circuit dies with slanted sidewalls and a method of forming are provided. The integrated circuit package may include a first integrated circuit die, a first gap-fill dielectric layer around the first integrated circuit die, a second integrated circuit die underneath the first integrated circuit die, and a second gap-fill dielectric layer around the second integrated circuit die. The first integrated circuit die may include a first substrate, wherein a first angle is between a first sidewall of the first substrate and a bottom surface of the first substrate, and a first interconnect structure on the bottom surface of the first substrate, wherein a second angle is between a first sidewall of the first interconnect structure and the bottom surface of the first substrate. The first angle may be larger than the second angle.

Abstract: A method of orthopedic treatment includes steps of: by using a computer aided design (CAD) tool based on profile data that is related to a to-be-treated part of a bone of a patient, obtaining a model of a preliminary instrument that substantially fits the to-be-treated part; by using the CAD tool, obtaining a model of a patient specific instrument (PSI) based on the model of the preliminary instrument; producing the PSI based on the model of the PSI, the PSI being adjustable; performing medical operation on the to-be-treated part, and then attaching the PSI to the to-be-treated part; after attaching the PSI to the to-be-treated part, adjusting the PSI such that the PSI is adapted to real conditions of the to-be-treated part.

Abstract: An LED chip package structure includes a substrate; a first circuit pattern disposed on a surface of the substrate, wherein the first circuit pattern is divided into an electrical connection portion and a carrier portion; a second circuit pattern disposed on another surface of the substrate; a plurality of vias disposed in the substrate and connecting the first circuit pattern and the second circuit pattern, wherein the vias are filled with conductive material; and a plurality of LED chips disposed on the carrier portion of the substrate and electrically connected with the electrical connection portion. The vias filled with the conductive material are utilized to enhance heat dissipation of the substrate.

Abstract: Systems, apparatuses, and methods for memory backup in a redundant array of independent disks (RAID) system are described. The methods include detecting a failure in a main power supply that supplies power to a volatile memory that is coupled to a RAID controller, switching to a temporary power supply to supply power to the volatile memory in response to detecting the main power supply failure, and transferring data from the volatile memory to a non-volatile memory coupled to the RAID controller subsequent to switching to the temporary power supply.

Abstract: An LED lamp module includes a heat sink element having one-piece form; a circuit substrate affixed onto the heat sink element, wherein the substrate has at least an opening exposing the heat sink element, and has an area smaller than that of the heat sink element; a plurality of LED chips mounted on the exposed portion of the heat sink element and electrically connected to the circuit substrate; and a light transparent package material, encapsulating the plurality of LED chips, wherein the heat sink element includes a uniform temperature plate or a plate including at least a vacuum cavity, and an extension part extending laterally from the plate and turned to surround the plurality of LED chips, forming a secondary optical structure. A fabrication method for the LED lamp module is also disclosed. Existing fabrication process is simplified and the cost is lowered with increased heat dissipation effect.

Abstract: The present invention discloses a package substrate comprising an insulative carrier having a through-hole penetrating the top and bottom surfaces thereof; at least one first and second conductive layers comprising circuits respectively formed on the top and bottom surfaces and covering an opening of the through-hole; a conductive element set in the through-hole for electrically connecting the first and second conductive layers; a first metal layer formed on the first and/or the second conductive layer; and at least one chip receiving bay formed by removing a portion of the carrier from the upper to the lower surfaces until the second conductive layer is exposed for accommodating at least one chip therein on the exposed second conductive layer. The package structure has a reduced overall thickness and an enhanced heat-dissipation effect for the chip and prevents from humidity penetration. A manufacturing method for the package structure is also disclosed.

Abstract: A manufacture method of light emitting diode (LED) module includes: providing a carrier board including a carrying area and a shaping area; arranging at least one substrate having at least one circuit layer in the carrying area of the carrier board; arranging at least one LED in the carrying area of the carrier board; electrically connecting the LED to the circuit layer of the substrate; encapsulating the LED and at least part of the circuit layer by at least one light transmissive encapsulation element; and fabricating the shaping area of the carrier board into a desired appearance. The above-mentioned carrier board not only can be a heat sink but also can be easily fabricated into various types of design shapes. Therefore, a light emitting diode module manufactured by the above-mentioned method has preferred heat dissipation effects and a better appearance with relatively low production costs.

Abstract: An LED lamp module is disclosed. An LED die is directly mounted on a heat sink element and then the LED chip is electrically connected to a circuit substrate or a circuit layer disposed over the heat sink element, wherein the size of the heat sink element is larger than the circuit layer or the substrate thereon, thereby providing the LED lamp module excellent heat dissipation. The structure of the LED lamp of the present invention simplifies the existing fabrication process, lowers the cost, and also increases the heat dissipation effect.

Abstract: The present invention discloses a chip package carrier and a fabrication method, which have the advantages of high reliability, thickness reduction and the scale reduction. The carrier and the method uses blind holes., which penetrates the substrate but external traces and external bonding pads, which cover the external traces. A chip can be installed and encapsulated directly on a first surface.

Abstract: The present invention discloses a manufacture method for a thin double-sided package substrate, which includes steps: providing a carrier; respectively forming a first conductive layer and a second conductive layer on the upper and lower surfaces of the carrier; forming a through-hole penetrating the first conductive layer and the carrier but not penetrating the second conductive layer; setting a conductive element in the through-hole to electrically connect the first conductive layer with the second conductive layer; forming desired circuits on the first conductive layer and/or the second conductive layer; forming a first metal layer on the first conductive layer and/or the second conductive layer; and removing the carrier located in a predetermined region to form a chip receiving bay.

Abstract: A chip package substrate includes multiple pairs of connection pads. Both pads of a connection pad pair are separated from each other with a distance, which is smaller than the side length of a chip. An insulation layer is configured on the connection pads but exposes a portion of the surface of each of connection pads, and then a contact pad is configured on the exposed surface of each of connection pads. Thus, the connection pads are moved inwardly to under the chip carrier area to reduce the size of the chip package.

Abstract: A fabrication method of a semiconductor package is applied to fabricate the package with the lead frame. The fabrication method includes: performing a surface treatment on a carrier; electroplating a plurality of metal-stacked layers on the surface of the carrier, wherein the top of the metal-stacked layer is a bonding surface and the bottom of the metal-stacked layer is a welding surface; performing a chip bonding step; forming a molding compound on the carrier; removing the carrier and performing a dicing step to form a plurality of semiconductor packages. The fabrication method of a semiconductor package also includes that forming a plurality of cavities on the carrier surface, electroplating the metal-stacked layer on the cavities, and then performing the chip bonding step, forming the molding compound on the carrier; remove the carrier and performing the dicing step. Using the foregoing steps can prevent the overflow situation without using any tape.

Abstract: A fabrication method of semiconductor and a structure thereof are disclosed herein. The present invention includes: providing a substrate; disposing a mask on the substrate, wherein the mask has a plurality of patterned openings to expose portions of the substrate; forming a metal layer on the exposed portions of the substrate; forming a surface treatment layer on the metal layer; removing the mask; performing a chip package step; and removing the substrate and the metal layer to form a height difference of semiconductor package with pads. The characteristic of the height difference not only can increase the thickness of the solder materials but also can easily check the soldering status.

Abstract: A substrate of chip package and the chip package structure thereof centralizes the bonding area under a chip carrier area and protrudes the bonding area from the chip carrier area to a chip package so as to increase the reliability of bump type surface mount technology during the second-level electronic assembly. Furthermore, the carrier for produce the substrate is recyclable during the chip package procedure so as to reduce the production cost.