Abstract: Some embodiments relate to a method for forming an integrated chip, the method includes forming a first conductive wire and a second conductive wire over a substrate. A dielectric structure is formed laterally between the first conductive wire and the second conductive wire. The dielectric structure comprises a first dielectric liner, a dielectric layer disposed between opposing sidewalls of the first dielectric liner, and a void between an upper surface of the first dielectric liner and a lower surface of the dielectric layer. A dielectric capping layer is formed along an upper surface of the dielectric structure. Sidewalls of the dielectric capping layer are aligned with sidewalls of the dielectric structure.

Abstract: A method for manufacturing a semiconductor structure includes preparing a dielectric structure formed with trenches respectively defined by lateral surfaces of the dielectric structure, forming spacer layers on the lateral surfaces, filling an electrically conductive material into the trenches to form electrically conductive features, selectively depositing a blocking layer on the dielectric structure, selectively depositing a dielectric material on the electrically conductive features to form a capping layer, removing the blocking layer and the dielectric structure to form recesses, forming sacrificial features in the recesses, forming a sustaining layer to cover the sacrificial features; and removing the sacrificial features to obtain the semiconductor structure formed with air gaps confined by the sustaining layer and the spacer layers.

Abstract: An inductor is disclosed, the inductor comprising: a T-shaped magnetic core, being made of a material comprising an annealed soft magnetic metal material and having a base and a pillar integrally formed with the base, wherein ?C×Hsat?1800, where ?C is a permeability of the T-shaped magnetic core, and Hsat (Oe) is a strength of the magnetic field at 80% of ?C0, where ?C0 is the permeability of the T-shaped magnetic core when the strength of the magnetic field is 0.

Abstract: An interconnect structure includes a dielectric layer, a first conductive feature, a hard mask layer, a conductive layer, and a capping layer. The first conductive feature is disposed in the dielectric layer. The hard mask layer is disposed on the first conductive feature. The conductive layer includes a first portion and a second portion, the first portion of the conductive layer is disposed over at least a first portion of the hard mask layer, and the second portion of the conductive layer is disposed over the dielectric layer. The hard mask layer and the conductive layer are formed by different materials. The capping layer is disposed on the dielectric layer and the conductive layer.

Abstract: A method for manufacturing a semiconductor structure includes preparing a dielectric structure formed with trenches respectively defined by lateral surfaces of the dielectric structure, forming spacer layers on the lateral surfaces, filling an electrically conductive material into the trenches to form electrically conductive features, selectively depositing a blocking layer on the dielectric structure, selectively depositing a dielectric material on the electrically conductive features to form a capping layer, removing the blocking layer and the dielectric structure to form recesses, forming sacrificial features in the recesses, forming a sustaining layer to cover the sacrificial features; and removing the sacrificial features to obtain the semiconductor structure formed with air gaps confined by the sustaining layer and the spacer layers.

Abstract: A method and apparatus for testing an object. A testing unit comprises a base structure, a contact structure, and piezoelectric transducers. The piezoelectric transducers are located between the base structure and the contact structure. A preload is present on the piezoelectric transducers.

Abstract: A method and apparatus for testing an object. A testing unit comprises a base structure, a contact structure, and piezoelectric transducers. The piezoelectric transducers are located between the base structure and the contact structure. A preload is present on the piezoelectric transducers.

Abstract: A system for simulating a pyrotechnic shock may include an electrical power amplifier, a shaker, and a resonance beam. The electrical power amplifier may be configured to amplify a transient signal waveform representing a desired shock response spectrum (SRS). The shaker may be configured to generate a shock pulse in response to the amplified signal waveform. The resonance beam may be mounted to the shaker and may be configured to magnify the shock pulse.

Abstract: A system for simulating a pyrotechnic shock may include an electrical power amplifier, a shaker, and a resonance beam. The electrical power amplifier may be configured to amplify a transient signal waveform representing a desired shock response spectrum (SRS). The shaker may be configured to generate a shock pulse in response to the amplified signal waveform. The resonance beam may be mounted to the shaker and may be configured to magnify the shock pulse.