Abstract: A method of fabricating a semiconductor device includes the following steps. A plurality of doped regions are formed in a substrate. A first dielectric layer is formed on the substrate. A plurality of first contacts and second contacts are formed in the first dielectric layer to be connected to the plurality of doped regions. A memory element is formed on the first dielectric layer. The memory element is electrically connected to the second contact. A second dielectric layer is formed on the first dielectric layer. The second dielectric layer surrounds the memory element. A conductive line is formed in the second dielectric layer. A top surface of the conductive line is at a same level as a top surface of the memory element, and the conductive line is electrically connected to the plurality of first contacts.

Abstract: Provided is a semiconductor device including: a substrate, a plurality of isolation structures, a plurality of channel layers, and a gate structure. The substrate includes a plurality of fins thereon. The plurality of isolation structures are respectively disposed between the plurality of fins. A top surface of the plurality of isolation structures is higher than a top surface of the plurality of fins to form a plurality of openings. The plurality of channel layers are respectively disposed in the plurality of openings. Each channel layer is in contact with a corresponding fin and extends to cover a lower sidewall of a corresponding isolation structure, thereby forming a U-shaped structure. The gate structure is filled in the plurality of openings and extends to cover the top surface of the plurality of isolation structures.

Abstract: A drug conjugate includes a structure shown by the following formula: Z-(linker-[R]m)n. In the formula, Z is a drug compound, R is a sugar, and m and n are independently an integer from 1 to 6. The drug compound Z is a hepatitis virus targeting drug, a hepatitis B virus (HBV) drug, an inhibitor of apoptosis protein (IAP) antagonist, a multidrug resistance (MDR) inhibitor, or analogues, precursors, prodrugs, derivatives thereof.

Abstract: An orthodontic appliance for movably disposed inside dental patient's mouth. The dental patient's mouth has a maxillary dental arch, a mandibular dental arch, and defines a lingual side, a labial side, and a buccal side. The orthodontic appliance has a hard maxillary retainer corresponding to patient's upper jaw, a hard mandibular retainer corresponding to patient's lower jaw, and a soft retainer rigidly attached to the hard maxillary retainer and hard mandibular retainer. The hard maxillary retainer and hard mandibular retainer can be prefabricated according to expected Cusp-to-Fossa Relationship of dental patient, and then be manufactured in an injection mold. The orthodontic appliance can have function to treat teeth deviation, dislocation, malocclusion, or teeth unmatch.

Abstract: A method for fabricating orthodontic appliance using bone expansion for dental alignment is provided.

Abstract: An orthodontic appliance for movably disposed inside dental patient's mouth. The dental patient's mouth has a maxillary dental arch, a mandibular dental arch, and defines a lingual side, a labial side, and a buccal side. The orthodontic appliance has a hard maxillary retainer corresponding to patient's upper jaw, a hard mandibular retainer corresponding to patient's lower jaw, and a soft retainer rigidly attached to the hard maxillary retainer and hard mandibular retainer. The hard maxillary retainer and hard mandibular retainer can be prefabricated according to expected Cusp-to-Fossa Relationship of dental patient, and then be manufactured in an injection mold. The orthodontic appliance can have function to treat teeth deviation, dislocation, malocclusion, or teeth unmatch.

Abstract: A orthodontic suite and its manufacturing method for multistage treating malocclusion or abnormal alignment of the teeth and jaws are suggest. The orthodontic suite has a first stage and a second orthodontic appliances, in which the first orthodontic appliance includes a first stage arch, first stage anchoring troughs and first stage adapting troughs disposed on the first stage arch. The second orthodontic appliance includes a second stage arch, second stage anchoring troughs and second stage adapting troughs disposed on the second stage arch. The positions of second stage anchoring troughs are identical to the first stage anchoring troughs, and the positions of the second stage adapting troughs are shifting or rotating based on the first stage adapting troughs.

Abstract: A dental oral appliance for using inside an oral cavity, where the oral cavity has an upper row of teeth, a lower row of teeth, a tongue, and an upper jaw. The upper and lower row of teeth define a lingual side. The dental oral appliance includes a separating portion and a tongue supporting portion, where an upper teeth region is defined above the separating portion and a lower teeth region is defined underneath thereof. The upper teeth region is adjacently disposed around the upper row of teeth, and the lower teeth region is adjacently disposed around the lower row of teeth. The outer edge of the tongue supporting portion is connected to one side of the separating portion close to the tongue.

Abstract: A telescopic casing includes first end portion, second end portion, first support spring, third end portion, and second support spring. Each of the first, second, and third end portions has a hollow tubular shape. Top end of first end portion is detachably coupled to dental handpiece. Top end of second end portion is nested by rear end of first end portion. First support spring is disposed in first end portion, wherein one end of first support spring abuts against top end of second end portion and the other end of first support spring abuts against first end portion. Top end of third end portion is nested by rear end of second end portion. Second support spring is disposed in second end portion, wherein one end of second support spring abuts against top end of third end portion and the other end of second support spring abuts against second end portion.

Abstract: A network communication apparatus is provided. The network communication apparatus includes a Wi-Fi unit, a sampling rate converter, an LTE unit, and a transceiver. The Wi-Fi unit has a plurality of Wi-Fi data, wherein the Wi-Fi data has a Wi-Fi sampling rate. The sampling rate converter processes the Wi-Fi data by converting the sampling rate. The LTE unit has a plurality of LTE data, wherein the LTE data has an LTE sampling rate. The transceiver generates a CPRI basic frame, wherein a first portion of the CPRI basic frame includes a portion of the LTE data and a second portion of the CPRI basic frame includes a portion of the Wi-Fi data.

Abstract: A headlight assembly includes a housing, a light source, a light shielding plate, and a light guiding plate. The housing defines a compartment, and includes a reflector and a lens disposed in front of the reflector. The light source is mounted in the compartment and is disposed on an optical axis. The light shielding plate is mounted between the light source and the lens. The light guiding plate is disposed below the optical axis. A first portion of light beams emitted upwardly is reflected by the reflector, passes over the light shielding plate and through the lens, which refracts the first portion of the light beams to form a first illuminating pattern. A second portion of the light beams passes through the light guiding plate and through the lens, which refracts the second portion of the light beams to result in a second illuminating pattern that is directed forwardly and upwardly.

Abstract: A prediction model for exposure dose is indicated by the following formula, E=E0+EC, wherein E represents an optimized exposure dose, E0 represents a preset exposure dose of a process control system, and EC represents an exposure dose compensation value, and EC=[(MTTdiff/X)/(CDmask/X)]×(ES/A?)×(Wlast+Wavg), wherein MTTdiff represents the differences between the MTT value of a previous lot and the MTT value of a next lot, CDmask represents the actual critical dimension of the mask, X represents the magnification of the mask, ES represents the actual exposure dose of a previous lot, A? represents an experimental value obtained from the results of different lots, Wlast represents the last batch of weights and Wavg represents an average weight, and CDmask, ES, A?, Wlast and Wavg are set parameters built into the process control system.

Abstract: A headlight assembly includes a housing, a light source, a light shielding plate, and a light guiding plate. The housing defines a compartment, and includes a reflector and a lens disposed in front of the reflector. The light source is mounted in the compartment and is disposed on an optical axis. The light shielding plate is mounted between the light source and the lens. The light guiding plate is disposed below the optical axis. A first portion of light beams emitted upwardly is reflected by the reflector, passes over the light shielding plate and through the lens, which refracts the first portion of the light beams to form a first illuminating pattern. A second portion of the light beams passes through the light guiding plate and through the lens, which refracts the second portion of the light beams to result in a second illuminating pattern that is directed forwardly and upwardly.

Abstract: Method of performing lithographic processes on a wafer in a lithographic apparatus having multiple stages. First, a lithographic apparatus including a first wafer chuck and a second wafer chuck is provided. Subsequently, a cassette including a plurality of wafers is provided in the lithographic apparatus, and each wafer has a wafer identification. Thereafter, the first wafer chuck is set for holding the wafers having odd wafer identifications, and the second wafer chuck is set for holding the wafers having even wafer identifications. Next, a first lithographic process is performed on each wafer by the lithographic apparatus.

Abstract: A prediction model for exposure dose is indicated by the following formula, E=E0+EC, wherein E represents an optimized exposure dose, E0 represents a preset exposure dose of a process control system, and EC represents an exposure dose compensation value, and EC=[(MTTdiff/X)/(CDmask/X)]×(ES/A?)×(Wlast+Wavg), wherein MTTdiff represents the differences between the MTT value of a previous lot and the MTT value of a next lot, CDmask represents the actual critical dimension of the mask, X represents the magnification of the mask, ES represents the actual exposure dose of a previous lot, A? represents an experimental value obtained from the results of different lots, Wlast represents the last batch of weights and Wavg represents an average weight, and CDmask, ES, A?, Wlast and Wavg are set parameters built into the process control system.

Abstract: The invention is directed to a photomask for a photolithography process. The photomask comprises a substrate, at least one image region and a plurality of alignment marks. The image regions are located on the substrate and at least an image center of one of the image regions non-overlap with a substrate center. The alignment marks are located on the substrate and surrounding each of the image regions. Each of the image regions is surrounded by at least four alignment marks.

Abstract: An image acquisition method for an image acquisition apparatus is provided. The image acquisition method includes the steps of exposing an image acquisition platform and moving an optical module from an initial position to a hiding position. The hiding position is located at an opaque area of the image acquisition platform. The opaque area is used for concealing the light emitted from the optical module. The image acquisition method of the invention prevents the light from reaching and irritating the user's eyes when the user is operating the image acquisition apparatus.

Abstract: A semiconductor doping process uses hydrogen in a diffusion furnace to prevent platinum/gold atoms from gathering around a defect area of the semiconductor wafer. Platinum/gold atom aggregation caused by a micro defect in the semiconductor wafer is prevented in order to stabilize the semiconductor doping process and to improve reverse recover time (TRR) to further improve yield rate.