Patents by Inventor Chi-Chuan TSAI

Chi-Chuan TSAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integration scheme for breakdown voltage enhancement of a piezoelectric metal-insulator-metal device
    Patent number: 11984261
    Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a dielectric structure sandwiched between a first electrode and a bottom electrode. A passivation layer overlies the second electrode and the dielectric structure. The passivation layer comprises a horizontal surface vertically below a top surface of the passivation layer. The horizontal surface is disposed above a top surface of the dielectric structure.
    Type: Grant
    Filed: August 25, 2021
    Date of Patent: May 14, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Anderson Lin, Chun-Ren Cheng, Chi-Yuan Shih, Shih-Fen Huang, Yi-Chuan Teng, Yi Heng Tsai, You-Ru Lin, Yen-Wen Chen, Fu-Chun Huang, Fan Hu, Ching-Hui Lin, Yan-Jie Liao
  • Cryogen-free high-temperature superconductor undulator structure and method for manufacturing the same
    Patent number: 11600416
    Abstract: A cryogen-free high-temperature superconductor undulator structure is provided. The superconductor undulator structure includes a magnetic core body and a coil structure. The magnetic core body includes a first and a second half magnetic pole arrays that are vertically aligned, a plurality of first winding cores in the first half magnetic pole array, and a plurality of second winding cores in the second half magnetic pole array. The coil structure is wound on the first winding cores and the second winding cores of the magnetic core body. The coil structure includes a plurality of first superconductor tapes in contact with each of the first winding cores and each of the second winding cores, and a plurality of second superconductor tapes, each of the second superconductor tapes is in contact with two adjacent first superconductor tapes. A method of manufacturing a cryogen-free high-temperature superconductor undulator structure is also provided.
    Type: Grant
    Filed: August 16, 2021
    Date of Patent: March 7, 2023
    Assignee: NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER
    Inventors: Jyh-Chyuan Jan, Chi-Chuan Tsai, Fu-Yuan Lin, Ching-Shiang Hwang
  • CRYOGEN-FREE HIGH-TEMPERATURE SUPERCONDUCTOR UNDULATOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20230047243
    Abstract: A cryogen-free high-temperature superconductor undulator structure is provided. The superconductor undulator structure includes a magnetic core body and a coil structure. The magnetic core body includes a first and a second half magnetic pole arrays that are vertically aligned, a plurality of first winding cores in the first half magnetic pole array, and a plurality of second winding cores in the second half magnetic pole array. The coil structure is wound on the first winding cores and the second winding cores of the magnetic core body. The coil structure includes a plurality of first superconductor tapes in contact with each of the first winding cores and each of the second winding cores, and a plurality of second superconductor tapes, each of the second superconductor tapes is in contact with two adjacent first superconductor tapes. A method of manufacturing a cryogen-free high-temperature superconductor undulator structure is also provided.
    Type: Application
    Filed: August 16, 2021
    Publication date: February 16, 2023
    Inventors: Jyh-Chyuan JAN, Chi-Chuan TSAI, Fu-Yuan LIN, Ching-Shiang HWANG