Abstract: A system for detecting and cleaning indoor air pollution includes gas detection devices and filtering devices. The gas detection devices are adapted to detect a qualitative property and a concentration of an air pollution and output an air pollution data to perform an intelligent computation. The filtering devices are physical-typed or chemical-typed for filtering the air pollution. The filtering devices include one or more movable filtering devices, and the movable filtering device includes a gas detection device. After the intelligent computation is performed to locate an air pollution location, a control command is transmitted to the movable filtering device selectively and intelligently, and the movable filtering device receives the control command and is moved to the air pollution location. Therefore, the movable filtering device allows the air pollution data to approach to a non-detection state, thus a gas in the indoor space is cleaned to a safe and breathable state.

Abstract: A flip-ship semiconductor package with a lead frame as a chip carrier is provided, wherein a plurality of leads of the lead frame are each formed with at least a dam member thereon. When a chip is mounted on the lead frame by means of solder bumps, each of the solder bumps is attached to the corresponding one of the leads at a position between the dam member and an inner end of the lead. During a reflow-soldering process for wetting the solder bumps to the leads, the dam members would help control collapse height of the solder bumps, so as to enhance resistance of the solder bumps to thermal stress generated by CTE (coefficient of thermal expansion) mismatch between the chip and the leads, thereby preventing incomplete electrical connection between the chip and the leads.

Abstract: A flip-ship semiconductor package with a lead frame as a chip carrier is provided, wherein a plurality of leads of the lead frame are each formed with at least a dam member thereon. When a chip is mounted on the lead frame by means of solder bumps, each of the solder bumps is attached to the corresponding one of the leads at a position between the dam member and an inner end of the lead. During a reflow-soldering process for wetting the solder bumps to the leads, the dam members would help control collapse height of the solder bumps, so as to enhance resistance of the solder bumps to thermal stress generated by CTE (coefficient of thermal expansion) mismatch between the chip and the leads, thereby preventing incomplete electrical connection between the chip and the leads.

Abstract: A flip-ship semiconductor package with a lead frame as a chip carrier is provided, wherein a plurality of leads of the lead frame are each formed with at least a dam member thereon. When a chip is mounted on the lead frame by means of solder bumps, each of the solder bumps is attached to the corresponding one of the leads at a position between the dam member and an inner end of the lead. During a reflow-soldering process for wetting the solder bumps to the leads, the dam members would help control collapse height of the solder bumps, so as to enhance resistance of the solder bumps to thermal stress generated by CTE (coefficient of thermal expansion) mismatch between the chip and the leads, thereby preventing incomplete electrical connection between the chip and the leads.

Abstract: A flip-chip semiconductor package with a lead frame and a method for fabricating the same are provided. The lead frame has a plurality of leads, each lead having an upper surface, a lower surface, and an inner end directed toward the center of the lead frame. A recessed portion is formed on the upper surface of the inner end of each lead, making the inner end shaped as a stepped structure. The depth of the recessed portion is equal to a height of a reflow-collapsed solder bump that is for electrically connecting a chip to the lead. At least one chip is electrically connected to the leads in a flip-chip manner via a plurality of solder bumps bonded to the recessed portions. An encapsulation body is formed to encapsulate the lead frame, chip and solder bumps, with the lower surfaces of the leads being exposed from the encapsulation body.

Abstract: A method is proposed for fabricating a TFBGA (Thin & Fine Ball-Grid Array) package with embedded heat spreader. Conventionally, since an individual TFBGA package is quite small in size, it would be highly difficult to incorporate an embedded heat spreader therein. As a solution to this problem, the proposed method utilizes a single substrate predefined with a plurality of package sites, and further utilizes a heat-spreader frame including an integrally-formed matrix of heat spreaders each corresponding to one of the package sites on the substrate. A batch of semiconductor chips are then mounted on the respective package sites on the substrate. During the encapsulation process, a single continuous encapsulation body is formed to encapsulate the entire heat-spreader frame and all the semiconductor chips. After ball implantation, a singulation process is performed to cut apart the encapsulation body into individual package units, each serving as the intended TFBGA package.

Abstract: A flip-chip semiconductor package with a lead frame and a method for fabricating the same are provided. The lead frame has a plurality of leads, each lead having an upper surface, a lower surface, and an inner end directed toward the center of the lead frame. A recessed portion is formed on the upper surface of the inner end of each lead, making the inner end shaped as a stepped structure. The depth of the recessed portion is equal to a height of a reflow-collapsed solder bump that is for electrically connecting a chip to the lead. At least one chip is electrically connected to the leads in a flip-chip manner via a plurality of solder bumps bonded to the recessed portions. An encapsulation body is formed to encapsulate the lead frame, chip and solder bumps, with the lower surfaces of the leads being exposed from the encapsulation body.

Abstract: A method is proposed for fabricating a TFBGA (Thin & Fine Ball-Grid Array) package with embedded heat spreader. Conventionally, since an individual TFBGA package is quite small in size, it would be highly difficult to incorporate an embedded heat spreader therein. As a solution to this problem, the proposed method utilizes a single substrate predefined with a plurality of package sites, and further utilizes a heat-spreader frame including an integrally-formed matrix of heat spreaders each corresponding to one of the package sites on the substrate. A batch of semiconductor chips are then mounted on the respective package sites on the substrate. During the encapsulation process, a single continuous encapsulation body is formed to encapsulate the entire heat-spreader frame and all the semiconductor chips. After ball implantation, a singulation process is performed to cut apart the encapsulation body into individual package units, each serving as the intended TFBGA package.

Abstract: A method is proposed for fabricating a TFBGA (Thin & Fine Ball-Grid Array) package with embedded heat spreader. Conventionally, since an individual TFBGA package is quite small in size, it would be highly difficult to incorporate an embedded heat spreader therein. As a solution to this problem, the proposed method utilizes a single substrate predefined with a plurality of package sites, and further utilizes a heat-spreader frame including an integrally-formed matrix of heat spreaders each corresponding to one of the package sites on the substrate. A batch of semiconductor chips are then mounted on the respective package sites on the substrate. During the encapsulation process, a single continuous encapsulation body is formed to encapsulate the entire heat-spreader frame and all the semiconductor chips. After ball implantation, a singulation process is performed to cut apart the encapsulation body into individual package units, each serving as the intended TFBGA package.

Abstract: A method is proposed for fabricating a TFBGA (Thin & Fine Ball-Grid Array) package with embedded heat spreader. Conventionally, since an individual TFBGA package is quite small in size, it would be highly difficult to incorporate an embedded heat spreader therein. As a solution to this problem, the proposed method utilizes a single substrate predefined with a plurality of package sites, and further utilizes a heat-spreader frame including an integrally-formed matrix of heat spreaders each corresponding to one of the package sites on the substrate. A batch of semiconductor chips are then mounted on the respective package sites on the substrate. During the encapsulation process, a single continuous encapsulation body is formed to encapsulate the entire heat-spreader frame and all the semiconductor chips. After ball implantation, a singulation process is performed to cut apart the encapsulation body into individual package units, each serving as the intended TFBGA package.

Abstract: A method is proposed for fabricating a TFBGA (Thin & Fine Ball-Grid Array) package with embedded heat spreader. Conventionally, since an individual TFBGA package is quite small in size, it would be highly difficult to incorporate an embedded heat spreader therein. As a solution to this problem, the proposed method utilizes a single substrate predefined with a plurality of package sites, and further utilizes a heat-spreader frame including an integrally-formed matrix of heat spreaders each corresponding to one of the package sites on the substrate. A batch of semiconductor chips are then mounted on the respective package sites on the substrate. During the encapsulation process, a single continuous encapsulation body is formed to encapsulate the entire heat-spreader frame and all the semi-conductor chips. After ball implantation, a singulation process is performed to cut apart the encapsulation body into individual package units, each serving as the intended TFBGA package.

Abstract: A heat sink with a collapse structure and a semiconductor device with the heat sink are proposed, in which the heat sink is in ladder-like shape due to a height difference formed between an extending portion and an body of the heat sink, and the body has at least one surface exposed to outside of the semiconductor package. The extending portion produces collapse deformation in response to stress from engagement of molds in a molding process, so as to prevent a semiconductor chip from being damaged by the stress. The heat sink directly attached to the chip allows heat generated by the chip to pass through the extending portion to the body of the heat sink, and then the heat can be dissipated through the exposed surface of the body to the outside of the semiconductor package, so as to improve the heat dissipating efficiency.

Abstract: A method of packaging a multi chip module (MCM) with low cost and high reliability is disclosed. In the MCM process, a plurality of bare chips and CPSs, such as CPU or memory device, are integrated on a substrate to increase the package density. The method discards the high cost KGD process and directly takes the thin and small CSPs passing the tests as KGD and integrates the chips and CSPs into ball grid array package (BGA package) so that the cost is reduced and the yield and quality of the package is improved.

Abstract: A semiconductor package and its fabricating method are proposed, in which a plurality of passive devices are integrated under a semiconductor chip, so as to increase the layout number of the passive devices in the semiconductor package and enhance the flexibility of substrate routability, as well as reduce an occupied area of a substrate for miniaturize the semiconductor package in profile. Moreover, as the integrated passive devices are further encapsulated by using an insulative material prior to a molding process, the dislocation of the passive devices caused by a high temperature and mold flow of a molding resin can be prevented from occurrence during molding. Furthermore, the encapsulated passive devices are prevented from contacting bonding wires, allowing the occurrence of short circuit to be avoided and quality of the packaged product to be assured.

Abstract: A QFN semiconductor package and a fabrication method thereof are proposed, wherein a lead frame having a plurality of leads is adopted, and each lead is formed at its inner end with a protruding portion. A wire bonding region and a bump attach region are respectively defined on opposite surfaces of the protruding portion, and staggered in position. This allows a force applied from a wire bonder to the wire bonding regions not to adversely affect solder bumps implanted on the bump attach regions, so that the solder bumps can be structurally assured without cracking. Moreover, the wire bonding regions spaced apart from the bump attach regions can be prevented from being contaminated by an etching solution used in solder bump implantation, so that wire bonding quality can be well maintained.

Abstract: A semiconductor package with a heat-dissipating structure and a method for making the same are proposed. The heat-dissipating structure includes a heat sink and a plurality of solder columns, wherein the solder columns are attached at ends thereof to the heat sink and to a substrate, so as to support the heat sink to be positioned above a semiconductor chip mounted on the substrate. A reflow process performed after the attachment of the heat-dissipating structure to the substrate allows the self-alignment of the solder columns with respect to predetermined positions on the substrate, which helps precisely control the positioning of the heat-dissipating structure fixed on the substrate. Moreover, the solder columns can protect the substrate from being damaged or deformed during a molding process. In addition, the heat-dissipating structure is simple in structure, which simplifies the manufacturing process and reduces the cost.

Abstract: A super low profile package with stacked dies comprises a substrate, a heat spreader, a first die, a second die, a molding compound, and a number of solder balls. The substrate has a cavity, a top surface and a bottom surface opposite to the top surface. The heat spreader is connected to the bottom surface of the substrate, and a portion of the heat spreader opposite to the cavity serves as a die pad. The first die seated in the cavity is attached to the die pad while the second die seated in the cavity is attached to the first die, and both dies are wire-bonded to the substrate for electrical connection. The molding compound fills the cavity and encapsulates the first die, the second die, the heat spreader, and part of the bottom surface of the substrate. Numerous solder balls are attached to the bottom surface of the substrate. The benefits resulting from the package of the invention include a reduction of profile, a simple manufacturing process, and a low prime cost.

Abstract: An improved tape carrier package (TCP) structure is proposed, which is characterized in the provision of dummy pads and dummy leads to help reinforce the package construction. The dummy pads are provided on the corners of the semiconductor chip, while the dummy leads are bonded between the dummy pads and corner-situated lead-bonding areas on the tape carrier. During assembly, since dummy leads are bonded between the dummy pads and corner-situated lead-bonding areas, the corners of the semiconductor chip can be firmly supported as well as the four sides of the semiconductor chip which are supported by the I/O leads. As a result the package construction is reinforced. During inner-lead bonding (ILB) process, such reinforcement can help prevent the cracking of the I/O leads.

Abstract: A method is proposed for mounting a passive component, such as a resistor or a capacitor, over an IC package substrate, such as a BGA (Ball Grid Array) substrate. Conventionally, the mounting of a passive component over a substrate would result in the undesired existence of a gap between the passive component and the substrate, which could lead to such problems as bridged short-circuit, popcorn effect, and dismounting of the passive component during subsequent processes. As a solution to these problems, the proposed method utilizes an electrically-insulative material, such as epoxy resin, to fill up the gap between the passive component and the substrate. Various techniques can be employed to fill the electrically-insulative material into the gap, including dispensing and stencil printing.

Abstract: A flip-ship semiconductor package with a lead frame as a chip carrier is provided, wherein a plurality of leads of the lead frame are each formed with at least a dam member thereon. When a chip is mounted on the lead frame by means of solder bumps, each of the solder bumps is attached to the corresponding one of the leads at a position between the dam member and an inner end of the lead. During a reflow-soldering process for wetting the solder bumps to the leads, the dam members would help control collapse height of the solder bumps, so as to enhance resistance of the solder bumps to thermal stress generated by CTE (coefficient of thermal expansion) mismatch between the chip and the leads, thereby preventing incomplete electrical connection between the chip and the leads.