Abstract: A webcam module, including a front casing, a rear casing, a support base, a lens, a blocking cover, and a lever, is provided. The front casing has a lens hole. The rear casing is disposed at the front casing and forms an accommodating space. The support base is rotatably disposed in the accommodating space. The lens is disposed on a front side surface of the support base facing the front casing. The blocking cover is slidably sleeved around the support base and faces the front casing. The lever is connected to the blocking cover and protrudes above the front casing and the rear casing. The lever is adapted to drive the blocking cover to slide along the support base. The lever is adapted to drive the blocking cover and the support base to rotate relative to the front casing with an axis as the center.

Abstract: In some implementations, one or more semiconductor processing tools may form a first terminal of a semiconductor device by depositing a tunneling oxide layer on a first portion of a body of the semiconductor device, depositing a first volume of polysilicon-based material on the tunneling oxide layer, and depositing a first dielectric layer on an upper surface and a second dielectric layer on a side surface of the first volume of polysilicon-based material. The one or more semiconductor processing tools may form a second terminal of the semiconductor device by depositing a second volume of polysilicon-based material on a second portion of the body of the semiconductor device. A side surface of the second volume of polysilicon-based material is adjacent to the second dielectric layer.

Abstract: A flash memory device and method of making the same are disclosed. The flash memory device is located on a substrate and includes a floating gate electrode, a tunnel dielectric layer located between the substrate and the floating gate electrode, a smaller length control gate electrode and a control gate dielectric layer located between the floating gate electrode and the smaller length control gate electrode. The length of a major axis of the smaller length control gate electrode is less than a length of a major axis of the floating gate electrode.