Patents by Inventor Chi Chung Yang

Chi Chung Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11661783
    Abstract: This disclosure is directed to an electric support rod having a driving assembly, an actuating assembly, and a bearing. The driving assembly has a first outer tube and a driving unit in the first outer tube. An internal thread is configured in the first outer tube. The actuating assembly has a second outer tube and a transmission screw rod in the second outer tube. Multiple elastic arms axially are extended from the second outer tube and arranged spacedly around the transmission screw rod. Each elastic arm has an outer thread structure and a hook portion. The second outer tube is inserted in the first outer tube, the internal thread is screwed with the outer thread structure. One end of the transmission screw rod protrudes from the second outer tube to engage the driving unit. The bearing sheathes the transmission screw rod and the hook portion latches the bearing.
    Type: Grant
    Filed: March 1, 2022
    Date of Patent: May 30, 2023
    Inventors: Chi-Wang Wu, Feng-Lin Yang, Jeffrey Chung-Chiang Hsi
  • Publication number: 20080173349
    Abstract: A light weight photovoltaic device for use in stratospheric and outer space applications. The device includes a protective surface coating on the light incident side thereof. The protective coating does not deleteriously affect the photovoltaic properties of the solar cell, is formed of a material which protects said solar cell from the harsh conditions in the stratospheric or outer space environment in which the photovoltaic device is adapted to be used; and remains substantially unchanged when exposed to the harsh conditions in the stratosphere or outer space. The protective coating is preferably made of a spray coated silicone based material and is between 0.01 and 2 mil thick.
    Type: Application
    Filed: January 22, 2007
    Publication date: July 24, 2008
    Inventors: Shengzhoug Liu, Kevin Beernink, Arindam Banerjee, Chi-Chung Yang, Subhendu Guha
  • Publication number: 20040247788
    Abstract: A method for forming a tungsten layer on a substrate surface is provided. In one aspect, the method includes positioning the substrate surface in a processing chamber and exposing the substrate surface to a boride. A nucleation layer is then deposited on the substrate surface in the same processing chamber by alternately pulsing a tungsten-containing compound and a reducing gas selected from a group consisting of silane (SiH4), disilane (Si2H6), dichlorosilane (SiCl2H2), derivatives thereof, and combinations thereof. A tungsten bulk fill may then be deposited on the nucleation layer using cyclical deposition, chemical vapor deposition, or physical vapor deposition techniques.
    Type: Application
    Filed: June 29, 2004
    Publication date: December 9, 2004
    Inventors: Hongbin Fang, Hyung-Suk A. Yoon, Ken Kaung Lai, Chi Chung (Yang) Young, James Horng, Ming Xi, Michael X. Yang, Hua Chung
  • Patent number: 6087580
    Abstract: A high quality non-single-crystal silicon alloy material including regions of intermediate range order (IRO) silicon alloy material up to but not including the volume percentage required to form a percolation path within the material. The remainder of the material being either amorphous or a mixture of amorphous and microcrystalline materials. The materials were prepared by CVD using differing amounts of hydrogen dilution to produce materials containing differing amounts of IRO material. Preferably the material includes at least 8 volume percent of IRO material.
    Type: Grant
    Filed: December 12, 1996
    Date of Patent: July 11, 2000
    Assignee: Energy Conversion Devices, Inc.
    Inventors: Stanford R. Ovshinsky, Subhendu Guha, Chi-Chung Yang, Xunming Deng, Scott Jones
  • Patent number: 4816082
    Abstract: One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.
    Type: Grant
    Filed: August 19, 1987
    Date of Patent: March 28, 1989
    Assignee: Energy Conversion Devices, Inc.
    Inventors: Subhendu Guha, Chi-Chung Yang, Stanford R. Ovshinsky
  • Patent number: 4696758
    Abstract: Precursor gaseous mixtures from which to glow discharge deposit wide and narrow band gap semiconductor alloy material, said material characterized by improved photoconductivity and stability and improved resistance to photodegradation. There is also specifically disclosed a method of fabricating a narrow band gap semiconductor which method does not suffer from the effects of differential depletion of the components of the precursor gaseous mixture.
    Type: Grant
    Filed: October 6, 1986
    Date of Patent: September 29, 1987
    Assignee: Energy Conversion Devices, Inc.
    Inventors: Stanford R. Ovshinsky, Subhendu Guha, Prem Nath, Chi Chung Yang, Jeffrey Fournier, James Kulman