Abstract: Provided is an anti-fuse memory including a anti-fuse memory cell including an isolation structure, a select gate, first and second gate insulating layers, an anti-fuse gate, and first, second and third doped regions. The isolation structure is disposed in a substrate. The select gate is disposed on the substrate. The first gate insulating layer is disposed between the select gate and the substrate. The anti-fuse gate is disposed on the substrate and partially overlapped with the isolation structure. The second gate insulating layer is disposed between the anti-fuse gate and the substrate. The first doped region and the second doped region are disposed in the substrate at opposite sides of the select gate, respectively, wherein the first doped region is located between the select gate and the anti-fuse gate. The third doped region is disposed in the substrate and located between the first doped region and the isolation structure.

Abstract: A physically unclonable function includes a flash memory, a current comparator and a controller. The flash memory includes a plurality of memory cells. A method of operating the physically unclonable function circuit includes the controller setting the plurality of memory cells to an initial data state, the controller setting the plurality of memory cells between the initial data state and an adjacent data state of the initial data state, the current comparator reading a first current from a memory cell in a first section of the plurality of the memory cells, the current comparator reading a second current from a memory cell in a second section of the plurality of the memory cells, and the current comparator outputting a random bit according to the first current and the second current.

Abstract: Output circuit with reduced overshoot includes input end, output end, a circuit composed of PMOS and NMOS, rising and falling edge trigger bias circuits. The rising and falling edge trigger bias circuits output biasing voltages to the output end for clamping the voltage of the output signals respectively according to the rising edge and the falling edge of the input signal. In this way, the overshoot of the output signal is reduced.

Abstract: Output circuit with reduced overshoot includes input end, output end, a circuit composed of PMOS and NMOS, rising and falling edge trigger bias circuits. The rising and falling edge trigger bias circuits output biasing voltages to the output end for clamping the voltage of the output signals respectively according to the rising edge and the falling edge of the input signal. In this way, the overshoot of the output signal is reduced.