Abstract: An injection device includes a housing, a plunger, and a heating unit. The plunger is slidably arranged within the housing thereby performing a plunging movement therein. The heating unit is disposed within the housing for generating a heat energy inside the housing such that a filling material inside the housing can be soften and be transformed into a movable filling material with viscosity by absorbing the heat energy from the heating unit.

Abstract: An injection device includes a housing, a plunger, and a heating unit. The plunger is slidably arranged within the housing thereby performing a plunging movement therein. The heating unit is disposed within the housing for generating a heat energy inside the housing such that a filling material inside the housing can be soften and be transformed into a movable filling material with viscosity by absorbing the heat energy from the heating unit.

Abstract: A multi-dimensional optical control device and a method thereof are provided. A movable light source can be moved due to an external action, and produce a light beam. A lens coupled to the light source is to focus the light beam. A sensor is used to sense a spot formed on the sensor by the focused light beam, and a data processing circuit coupled to the sensor is to obtain variations of position, shape and light intensity in respect to a reference spot.

Abstract: A light-emitting gallium nitride-based III-V group compound semiconductor device with high light extraction efficiency that features on a substrate with concave and/or convex surface, a texturing surface layer, and a transparent conductive window layer. Therefore, the operating voltage is decreased and the efficiency of light extracting is improved.

Abstract: A light-emitting gallium nitride-based III-V group compound semiconductor device with high light extraction efficiency that features on a substrate with concave and /or convex surface, a texturing surface layer, and a transparent conductive window layer. Therefore, the operating voltage is decreased and the efficiency of light extracting is improved.

Abstract: A light-emitting gallium nitride-based III-V group compound semiconductor device with high light extraction efficiency that features on a substrate with concave and/or convex surface, a texturing surface layer, and a transparent conductive window layer. Therefore, the operating voltage is decreased and the efficiency of light extracting is improved.

Abstract: In a GaN-based light-emitting diode structure, a transparent conductive oxide layer is formed as a window layer on a GaN contact layer having a surface textured layer, and the textured layer acts as an ohmic contact layer with the transparent conductive oxide layer. Therefore, it is possible to reduce effectively the contact resistance and the working voltage, while the optical guiding effect is interrupted by the textured layer, to obtain thereby an enhancement of light extraction efficiency and thus an increase in the external quantum yield.