Abstract: A gas detection and cleaning system for a vehicle is disclosed and includes an external modular base, a gas detection module and a cleaning device. The gas detection module is connected to a first external connection port of the external modular base to detect a gas in the vehicle and output the information datum. The information datum is transmitted through the first external connection port to a driving and controlling module of the external modular base, processed and converted into an actuation information datum for being externally outputted through a second external connection port of the external modular base. The cleaning device is connected with the second external connection port through an external port to receive the actuation information datum outputted from the second external connection port to actuate or close the cleaning device.

Abstract: A blood pressure device includes a first blood pressure measuring device, a second blood pressure measuring device, and a controller. The first blood pressure measuring device is to be worn on a first position of a wrist so as to obtain a first blood pressure information of the first position. The second blood pressure measuring device is to be worn on a second position of the wrist so as to obtain a second blood pressure information of the second position. The controller is electrically coupled to the first blood pressure measuring device and the second blood pressure measuring device so as to adjust tightness between the expanders and the user's skin, respectively. The controller receives, processes, and calculates a pulse transit time between the first blood pressure information and the second blood pressure information, and the controller obtains at least one blood pressure value based on the pulse transit time.

Abstract: A coaxial cable connector includes an inner sleeve, a nut, a first outer sleeve and a coupling sleeve. The first outer sleeve is coaxially arranged outside the inner sleeve. An inner wall of the first outer sleeve and the inner sleeve cooperate to define a first space. The nut is arranged outside the inner sleeve. The coupling sleeve is coaxially arranged inside the first outer sleeve. The coupling sleeve has a first end portion and a second end portion, wherein the first end portion of the coupling sleeve moves into the first space and resists against the inner sleeve as the coupling sleeve moves axially toward the nut so that one end of the inner sleeve radially deformed to press a metal layer of the coaxial cable, wherein the second end portion of the coupling sleeve is deformed radially to press an outer jacket of the coaxial cable.

Abstract: A high electron mobility transistor device includes a substrate, a plurality of pairs of alternating layers, at least one stress-relief layer and a gallium nitride layer. The plurality of pairs of alternating layers is disposed over the substrate, and each pair of alternating layers includes a carbon-doped gallium nitride layer and an undoped gallium nitride layer. The stress-relief layer is disposed between the pairs of alternating layers. The gallium nitride layer is disposed over the alternating layers.

Abstract: A high electron mobility transistor device includes a substrate, a superlattice buffer layer, a gradient buffer layer and a channel layer. The superlattice buffer layer are disposed over the substrate, wherein the superlattice buffer layer includes a plurality of sets of alternating layers, and each set of alternating layers includes at least one AlN layer and at least one AlxGa(1-x)N layer alternately arranged, wherein 0?x<1. The gradient buffer layer is disposed over the substrate, wherein the gradient buffer layer includes a plurality of AlyGa(1-y)N layers, wherein 0?y<1. The channel layer is disposed over the gradient buffer layer.

Abstract: A high electron mobility transistor device includes a substrate, a plurality of pairs of alternating layers, at least one stress-relief layer and a gallium nitride layer. The plurality of pairs of alternating layers is disposed over the substrate, and each pair of alternating layers includes a carbon-doped gallium nitride layer and an undoped gallium nitride layer. The stress-relief layer is disposed between the pairs of alternating layers. The gallium nitride layer is disposed over the alternating layers.

Abstract: A method for forming a GaN-containing semiconductor structure is provided. The method comprises a substrate is provided, a nucleation layer is formed above the substrate, a diffusion blocking layer is formed above the nucleation layer, a strain relief layer is formed above the diffusion blocking layer, and a semiconductor layer is formed above the strain relief layer, in which the diffusion blocking layer is deposited on the nucleation layer such that the diffusion blocking layer can prevent the impurities out-diffusion from the substrate.

Abstract: A method for forming a GaN-containing semiconductor structure is provided. The method comprises a substrate is provided, a nucleation layer is formed above the substrate, a diffusion blocking layer is formed above the nucleation layer, a strain relief layer is formed above the diffusion blocking layer, and a semiconductor layer is formed above the strain relief layer, in which the diffusion blocking layer is deposited on the nucleation layer such that the diffusion blocking layer can prevent the impurities out-diffusion from the substrate.

Abstract: A grounding electrical connector includes: an inner sleeve, a front end of the inner sleeve having an outer flange, an annular groove being formed on an inner circumference of the outer flange; an outer sleeve coaxially positioned around the inner sleeve; a nut formed with an inner threaded section for locking with a threaded interface connector of an electronic device, the nut further having a receptacle for receiving the outer flange of the inner sleeve therein; and a conductive grounding spring mounted in the annular groove of the inner sleeve and having multiple inner resilient concave sections. When the threaded section of the nut is screwed onto the threaded interface connector of the electronic device, the inner resilient concave sections of the conductive grounding spring are mechanically and electrically connected with a circumference of the threaded interface connector.

Abstract: A cable connector preventing electromagnetic leakage includes a main body assembly having a tubular main body and a lying U-shaped connecting seat connected to a printed circuit board (PCB); a contact conductor having a horizontal core section mounted in the tubular main body and a vertical connecting section electrically connected to the PCB; an insulating element unit mounted in the tubular main body for insulating the contact conductor from the main body assembly and supporting the contact conductor; and a shielding cover fastened to the U-shaped connecting seat for completely shielding upper and rear openings of the lying U-shaped connecting seat to prevent electromagnetic leakage.