Patents by Inventor Chi-Feng Hsieh

Chi-Feng Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12278451
    Abstract: A coaxial cable connector includes an inner sleeve, a nut, a first outer sleeve and a coupling sleeve. The first outer sleeve is coaxially arranged outside the inner sleeve. An inner wall of the first outer sleeve and the inner sleeve cooperate to define a first space. The nut is arranged outside the inner sleeve. The coupling sleeve is coaxially arranged inside the first outer sleeve. The coupling sleeve has a first end portion and a second end portion, wherein the first end portion of the coupling sleeve moves into the first space and resists against the inner sleeve as the coupling sleeve moves axially toward the nut so that one end of the inner sleeve radially deformed to press a metal layer of the coaxial cable, wherein the second end portion of the coupling sleeve is deformed radially to press an outer jacket of the coaxial cable.
    Type: Grant
    Filed: February 24, 2022
    Date of Patent: April 15, 2025
    Assignee: EZCONN CORPORATION
    Inventor: Chi Feng Hsieh
  • Publication number: 20220255272
    Abstract: A coaxial cable connector includes an inner sleeve, a nut, a first outer sleeve and a coupling sleeve. The first outer sleeve is coaxially arranged outside the inner sleeve. An inner wall of the first outer sleeve and the inner sleeve cooperate to define a first space. The nut is arranged outside the inner sleeve. The coupling sleeve is coaxially arranged inside the first outer sleeve. The coupling sleeve has a first end portion and a second end portion, wherein the first end portion of the coupling sleeve moves into the first space and resists against the inner sleeve as the coupling sleeve moves axially toward the nut so that one end of the inner sleeve radially deformed to press a metal layer of the coaxial cable, wherein the second end portion of the coupling sleeve is deformed radially to press an outer jacket of the coaxial cable.
    Type: Application
    Filed: February 24, 2022
    Publication date: August 11, 2022
    Inventor: CHI FENG HSIEH
  • Patent number: 11114555
    Abstract: A high electron mobility transistor device includes a substrate, a plurality of pairs of alternating layers, at least one stress-relief layer and a gallium nitride layer. The plurality of pairs of alternating layers is disposed over the substrate, and each pair of alternating layers includes a carbon-doped gallium nitride layer and an undoped gallium nitride layer. The stress-relief layer is disposed between the pairs of alternating layers. The gallium nitride layer is disposed over the alternating layers.
    Type: Grant
    Filed: August 20, 2019
    Date of Patent: September 7, 2021
    Assignee: Vanguard International Semiconductor Corporation
    Inventors: Chi-Feng Hsieh, Tuan-Wei Wang, Chien-Jen Sun
  • Publication number: 20210057561
    Abstract: A high electron mobility transistor device includes a substrate, a superlattice buffer layer, a gradient buffer layer and a channel layer. The superlattice buffer layer are disposed over the substrate, wherein the superlattice buffer layer includes a plurality of sets of alternating layers, and each set of alternating layers includes at least one AlN layer and at least one AlxGa(1-x)N layer alternately arranged, wherein 0?x<1. The gradient buffer layer is disposed over the substrate, wherein the gradient buffer layer includes a plurality of AlyGa(1-y)N layers, wherein 0?y<1. The channel layer is disposed over the gradient buffer layer.
    Type: Application
    Filed: August 20, 2019
    Publication date: February 25, 2021
    Applicant: Vanguard International Semiconductor Corporation
    Inventors: Chi-Feng HSIEH, Tuan-Wei WANG, Chien-Jen SUN
  • Publication number: 20210057562
    Abstract: A high electron mobility transistor device includes a substrate, a plurality of pairs of alternating layers, at least one stress-relief layer and a gallium nitride layer. The plurality of pairs of alternating layers is disposed over the substrate, and each pair of alternating layers includes a carbon-doped gallium nitride layer and an undoped gallium nitride layer. The stress-relief layer is disposed between the pairs of alternating layers. The gallium nitride layer is disposed over the alternating layers.
    Type: Application
    Filed: August 20, 2019
    Publication date: February 25, 2021
    Applicant: Vanguard International Semiconductor Corporation
    Inventors: Chi-Feng HSIEH, Tuan-Wei WANG, Chien-Jen SUN
  • Patent number: 9093365
    Abstract: A method for forming a GaN-containing semiconductor structure is provided. The method comprises a substrate is provided, a nucleation layer is formed above the substrate, a diffusion blocking layer is formed above the nucleation layer, a strain relief layer is formed above the diffusion blocking layer, and a semiconductor layer is formed above the strain relief layer, in which the diffusion blocking layer is deposited on the nucleation layer such that the diffusion blocking layer can prevent the impurities out-diffusion from the substrate.
    Type: Grant
    Filed: February 26, 2014
    Date of Patent: July 28, 2015
    Assignee: NATIONAL CHIAO TUNG UNIVERSITY
    Inventors: Yi Chang, Yuen Yee Wong, Chi Feng Hsieh
  • Publication number: 20150102357
    Abstract: A method for forming a GaN-containing semiconductor structure is provided. The method comprises a substrate is provided, a nucleation layer is formed above the substrate, a diffusion blocking layer is formed above the nucleation layer, a strain relief layer is formed above the diffusion blocking layer, and a semiconductor layer is formed above the strain relief layer, in which the diffusion blocking layer is deposited on the nucleation layer such that the diffusion blocking layer can prevent the impurities out-diffusion from the substrate.
    Type: Application
    Filed: February 26, 2014
    Publication date: April 16, 2015
    Applicant: NATIONAL CHIAO TUNG UNIVERSITY
    Inventors: Yi CHANG, Yuen Yee WONG, Chi Feng HSIEH
  • Patent number: 7938680
    Abstract: A grounding electrical connector includes: an inner sleeve, a front end of the inner sleeve having an outer flange, an annular groove being formed on an inner circumference of the outer flange; an outer sleeve coaxially positioned around the inner sleeve; a nut formed with an inner threaded section for locking with a threaded interface connector of an electronic device, the nut further having a receptacle for receiving the outer flange of the inner sleeve therein; and a conductive grounding spring mounted in the annular groove of the inner sleeve and having multiple inner resilient concave sections. When the threaded section of the nut is screwed onto the threaded interface connector of the electronic device, the inner resilient concave sections of the conductive grounding spring are mechanically and electrically connected with a circumference of the threaded interface connector.
    Type: Grant
    Filed: April 13, 2010
    Date of Patent: May 10, 2011
    Assignee: EZCONN Corporation
    Inventor: Chi-Feng Hsieh
  • Publication number: 20100099300
    Abstract: A cable connector preventing electromagnetic leakage includes a main body assembly having a tubular main body and a lying U-shaped connecting seat connected to a printed circuit board (PCB); a contact conductor having a horizontal core section mounted in the tubular main body and a vertical connecting section electrically connected to the PCB; an insulating element unit mounted in the tubular main body for insulating the contact conductor from the main body assembly and supporting the contact conductor; and a shielding cover fastened to the U-shaped connecting seat for completely shielding upper and rear openings of the lying U-shaped connecting seat to prevent electromagnetic leakage.
    Type: Application
    Filed: October 20, 2008
    Publication date: April 22, 2010
    Inventor: Chi-Feng HSIEH