Abstract: The present invention relates to a guide tool, the said guide tool is capable of assisting one end of a coaxial cable to be coupled to an end connector; it comprises of a body installed with a guide mechanism therein, the said guide mechanism possesses a guide tube for guiding the cable central conductors of different regulations; the said guide tube can move along the direction of the axle line by the elastic element for rapidly and precisely inserting the central conductor and the dielectric into the columnar member of the end connector and further becomes the best auxiliary tool.

Abstract: A squeezing tool for coaxial cable connector, to be used for a coaxial cable interconnected to a coupling means, which comprises a titled module support, two titled movable modules being coaxially deployed in said titled module support to support the connector of the coupling means, and so that the coupling means is assembled with one end of the cable in a manner free from compression, tension, or pressure, plus a grip brought to advance or regress along the surface of the module axialwise by means of a cranket means, such that the connector coupling section be eventually thrusted into the module, while application of force axialwise is permitted to bring the module compressed into the module support, meanwhile the perimeter of one end of the connector coupling section is uniformly squeezing to shrink essentially conically to facilitate coupling to the cable.

Abstract: A method for cleaning a semiconductor substrate. Introduced into a semiconductor substrate processing chamber is a semiconductor substrate. The semiconductor substrate and the semiconductor substrate processing chamber are maintained at a temperature not exceeding about 800 degrees centigrade. Introduced substantially simultaneously with the semiconductor substrate into the semiconductor substrate processing chamber is a low flow of a first oxidant gas. Introduced into the semiconductor substrate processing chamber immediately subsequent to the low flow of the first oxidant gas is a high flow of a second oxidant gas. Introduced into the semiconductor wafer processing chamber no earlier than the high flow of the second oxidant gas is a flow of a chlorine containing getter material.