Patents by Inventor Chi-Fu Lin

Chi-Fu Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240371987
    Abstract: A semiconductor arrangement includes a first well formed to a first depth and a first width in a substrate and a second well formed to a second depth and a second width in the substrate. The first well is formed in the second well, the first depth is greater than the second depth, and the second width is greater than the first width. A source region is formed in the second well and a drain region is formed in the substrate.
    Type: Application
    Filed: July 18, 2024
    Publication date: November 7, 2024
    Inventors: Chi-Fu LIN, Cheng-Hsin CHEN, Ming-I HSU, Kun-Ming HUANG, Chien-Li KUO
  • Patent number: 12100754
    Abstract: A semiconductor arrangement includes a first well formed to a first depth and a first width in a substrate and a second well formed to a second depth and a second width in the substrate. The first well is formed in the second well, the first depth is greater than the second depth, and the second width is greater than the first width. A source region is formed in the second well and a drain region is formed in the substrate.
    Type: Grant
    Filed: March 29, 2021
    Date of Patent: September 24, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
    Inventors: Chi-Fu Lin, Cheng-Hsin Chen, Ming-I Hsu, Kun-Ming Huang, Chien-Li Kuo
  • Publication number: 20230268378
    Abstract: A deep trench structure may be formed between electrodes of a capacitive device. The deep trench structure may be formed to a depth, a width, and/or an aspect ratio that increases the volume of the deep trench structure relative to a trench structure formed using a metal etch-stop layer. Thus, the deep trench structure is capable of being filled with a greater amount of dielectric material, which increases the capacitance value of the capacitive device. Moreover, the parasitic capacitance of the capacitive device may be decreased by omitting the metal etch-stop layer. Accordingly, the deep trench structure (and the omission of the metal etch-stop layer) may increase the sensitivity of the capacitive device, may increase the humidity-sensing performance of the capacitive device, and/or may increase the performance of devices and/or integrated circuits in which the capacitive device is included.
    Type: Application
    Filed: April 28, 2023
    Publication date: August 24, 2023
    Inventors: En-Shuo LIN, Sheng KO, Chi-Fu LIN, Che-Yi LIN, Clark LEE
  • Patent number: 11658206
    Abstract: A deep trench structure may be formed between electrodes of a capacitive device. The deep trench structure may be formed to a depth, a width, and/or an aspect ratio that increases the volume of the deep trench structure relative to a trench structure formed using a metal etch-stop layer. Thus, the deep trench structure is capable of being filled with a greater amount of dielectric material, which increases the capacitance value of the capacitive device. Moreover, the parasitic capacitance of the capacitive device may be decreased by omitting the metal etch-stop layer. Accordingly, the deep trench structure (and the omission of the metal etch-stop layer) may increase the sensitivity of the capacitive device, may increase the humidity-sensing performance of the capacitive device, and/or may increase the performance of devices and/or integrated circuits in which the capacitive device is included.
    Type: Grant
    Filed: November 13, 2020
    Date of Patent: May 23, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: En-Shuo Lin, Sheng Ko, Chi-Fu Lin, Che-Yi Lin, Clark Lee
  • Publication number: 20220157929
    Abstract: A deep trench structure may be formed between electrodes of a capacitive device. The deep trench structure may be formed to a depth, a width, and/or an aspect ratio that increases the volume of the deep trench structure relative to a trench structure formed using a metal etch-stop layer. Thus, the deep trench structure is capable of being filled with a greater amount of dielectric material, which increases the capacitance value of the capacitive device. Moreover, the parasitic capacitance of the capacitive device may be decreased by omitting the metal etch-stop layer. Accordingly, the deep trench structure (and the omission of the metal etch-stop layer) may increase the sensitivity of the capacitive device, may increase the humidity-sensing performance of the capacitive device, and/or may increase the performance of devices and/or integrated circuits in which the capacitive device is included.
    Type: Application
    Filed: November 13, 2020
    Publication date: May 19, 2022
    Inventors: En-Shuo LIN, Sheng KO, Chi-Fu LIN, Che-Yi LIN, Clark LEE
  • Publication number: 20210343861
    Abstract: A semiconductor arrangement includes a first well formed to a first depth and a first width in a substrate and a second well formed to a second depth and a second width in the substrate. The first well is formed in the second well, the first depth is greater than the second depth, and the second width is greater than the first width. A source region is formed in the second well and a drain region is formed in the substrate.
    Type: Application
    Filed: March 29, 2021
    Publication date: November 4, 2021
    Inventors: Chi-Fu LIN, Cheng-Hsin CHEN, Ming-I HSU, Kun-Ming HUANG, Chien-Li KUO
  • Patent number: 9735232
    Abstract: The present disclosure provides a method for manufacturing a semiconductor structure. The method includes several operations as follows. A semiconductor substrate is received. A trench along a depth in the semiconductor substrate is formed. The semiconductor substrate is exposed in a hydrogen containing atmosphere. Dopants are inserted into a portion of the semiconductor substrate. A dielectric is filled in the trench. The dopants are driven into a predetermined distance in the semiconductor substrate.
    Type: Grant
    Filed: July 24, 2014
    Date of Patent: August 15, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Tai-I Yang, Jheng-Sheng You, Chi-Fu Lin, Tien-Lu Lin
  • Publication number: 20150079771
    Abstract: The present disclosure provides a method for manufacturing a semiconductor structure. The method includes several operations as follows. A semiconductor substrate is received. A trench along a depth in the semiconductor substrate is formed. The semiconductor substrate is exposed in a hydrogen containing atmosphere. Dopants are inserted into a portion of the semiconductor substrate. A dielectric is filled in the trench. The dopants are driven into a predetermined distance in the semiconductor substrate.
    Type: Application
    Filed: July 24, 2014
    Publication date: March 19, 2015
    Inventors: Tai-I YANG, Jheng-Sheng YOU, Chi-Fu LIN, Tien-Lu LIN
  • Patent number: 7051649
    Abstract: A collapsible barbecue grill assembly has a top rack (20), a leg assembly attached under the top rack (20) and a foldable charcoal container (30) mounted on the top rack (20). The leg assembly is combined by means of wedging without using any tools. The top rack (20) is composed of two side frames (22a), (22b) and two panels (24a), (24b) pivotally connecting between the two side frames (22a), (22b). One joint of the panel and the side frames (22) is detachable to allow the top rack to be pivotally folded and the charcoal container (30) is foldable into a flat configuration. Therefore, the volume of the folded barbecue grill assembly is particularly low. Moreover, the barbecue grill assembly uses no trivial accessory and can be conveniently assembled without any tool.
    Type: Grant
    Filed: October 15, 2003
    Date of Patent: May 30, 2006
    Inventor: Chi-Fu Lin
  • Publication number: 20050229794
    Abstract: A collapsible barbecue grill assembly has a top rack (20), a leg assembly attached under the top rack (20) and a foldable charcoal container (30) mounted on the top rack (20). The leg assembly is combined by means of wedging without using any tools. The top rack (20) is composed of two side frames (22a), (22b) and two panels (24a), (24b) pivotally connecting between the two side frames (22a), (22b). One joint of the panel and the side frames (22) is detachable to allow the top rack to be pivotally folded and the charcoal container (30) is foldable into a flat configuration. Therefore, the volume of the folded barbecue grill assembly is particularly low. Moreover, the barbecue grill assembly uses no trivial accessory and can be conveniently assembled without any tool.
    Type: Application
    Filed: October 15, 2003
    Publication date: October 20, 2005
    Inventor: Chi-Fu Lin
  • Publication number: 20050150532
    Abstract: An adjustable hiking stick includes a telescopic tube having multiple interconnected sections. Adjacent sections connect at a joint, and the joint includes an end sleeve, a slide limit device, an inside section and an outside section. The outside section has an outside end and an interior surface. The inside section is slidably extended into the outside section and has an inside end and an exterior surface. The end sleeve is attached to the outside end of the outside section and has an annular lip. The slide limit device can be ribs, rings or the like that protruded from the exterior surface of the inside section and is formed adjacent to the inside end of the inside section. The slide limit device will abut the annular lip and keep the inside section from being pulled completely out of the outside section when the inside section is adjusted.
    Type: Application
    Filed: January 12, 2004
    Publication date: July 14, 2005
    Inventor: Chi-Fu Lin
  • Publication number: 20020088088
    Abstract: A hand tool with a detachable working piece includes a handle having a stud extending out from one end of the handle and a working piece detachably attached to the end of the handle. A locking pin extends through the working piece and the stub of the handle to prevent the working piece from inadvertently detaching from the handle. The locking pin has two steel balls movably mounted in the locking pin and partially extending out from the locking pin to prevent the locking pin from inadvertently detaching from the handle and the working piece. The user can change the working pieces rapidly and easily to deal with changing requirements. Furthermore, the hand tool will save money and storage space because only one handle is needed.
    Type: Application
    Filed: January 8, 2001
    Publication date: July 11, 2002
    Inventor: Chi-Fu Lin
  • Patent number: D459957
    Type: Grant
    Filed: August 27, 2001
    Date of Patent: July 9, 2002
    Inventor: Chi-Fu Lin
  • Patent number: D464247
    Type: Grant
    Filed: July 17, 2001
    Date of Patent: October 15, 2002
    Inventor: Chi-Fu Lin
  • Patent number: D380306
    Type: Grant
    Filed: June 26, 1996
    Date of Patent: July 1, 1997
    Inventor: Chi-fu Lin
  • Patent number: D981763
    Type: Grant
    Filed: September 24, 2021
    Date of Patent: March 28, 2023
    Assignee: TAIZHOUSHI TIANTAI WOSHIDAMAI CO. LTD
    Inventor: Chi Fu Lin
  • Patent number: D981764
    Type: Grant
    Filed: September 24, 2021
    Date of Patent: March 28, 2023
    Assignee: ZHEJIANG MANXI INDUSTRY CO., LTD
    Inventor: Chi Fu Lin