Abstract: One or more techniques or systems for cleaning wafers during semiconductor fabrication or an associated brush are provided herein. In some embodiments, the brush includes a brush body and one or more inner hole supports within the brush body. For example, a first inner hole support and a second inner hole support define a first inner hole associated with a first size. For another example, a third inner hole support and a fourth inner hole support define a second inner hole associated with a second size different than the first size. In some embodiments, a cleaning solution is applied to a wafer based on a first flow rate at a first brush position and based on a second flow rate at a second brush position. In this manner, a flow field associated with wafer cleaning is provided, thus enhancing cleaning efficiency, for example.

Abstract: Mechanisms of adjustable laser beams for LSA (Laser Spike Annealing) are provided. A computing device receives input mask information relative to a silicon wafer, and analyzes the input mask information so as to generate a control signal. A laser generator generates a laser beam, and adjusts a beam length of the laser beam according to the control signal. Such mechanisms of the disclosure effectively eliminate the stitch effect on the silicon wafer and further increase the wafer yield.

Abstract: One or more techniques or systems for cleaning wafers during semiconductor fabrication or an associated brush are provided herein. In some embodiments, the brush includes a brush body and one or more inner hole supports within the brush body. For example, a first inner hole support and a second inner hole support define a first inner hole associated with a first size. For another example, a third inner hole support and a fourth inner hole support define a second inner hole associated with a second size different than the first size. In some embodiments, a cleaning solution is applied to a wafer based on a first flow rate at a first brush position and based on a second flow rate at a second brush position. In this manner, a flow field associated with wafer cleaning is provided, thus enhancing cleaning efficiency, for example.

Abstract: An arc chamber filament for an ion implanter used to implant ions in a semiconductor wafer substrate during the fabrication of integrated circuits on the substrate. The filament includes a pair of parallel filament segments each of which is connected to a voltage source at one end. The parallel filament segments are connected to each other through a bidirectional winding configuration which defines at least one generally U-shaped winding unit on each side of a plane of symmetry bisecting the filament.

Abstract: A substrate holding mechanism which is particularly adaptable to automatically centering a semiconductor wafer on a platen spider as the wafer is lowered from a wafer loading and unloading position to a wafer processing position in a medium current implanter such as a Varian EHP500. Upon subsequent placement of a mechanical clamp on the wafer to hold the wafer on the platen, the clamp fingers of the clamp engage the edge of the wafer with substantially uniform pressure to prevent micro-cracking or fracturing of the wafer.

Abstract: An apparatus and a method for detecting the tilt angle of a wafer platform in a process machine, particularly in a medium density ion implanter. The apparatus and method can be used to accurately calibrate the zero-angle position of a wafer platform in the medium energy ion implanter. The apparatus includes a process chamber that has a cavity and a wafer platform therein, a window that is substantially transparent to laser energy mounted in a top wall of the chamber, and a laser emitter and receiver positioned outside the process chamber juxtaposed to the window for emitting a laser beam onto a wafer positioned on the wafer platform and receiving a reflected laser beam to determine a tilt angle of the wafer platform by the intensity of the reflected laser beam.

Abstract: An apparatus and a method for detecting the tilt angle of a wafer platform in a process machine, particularly in a medium density ion implanter. The apparatus and method can be used to accurately calibrate the zero-angle position of a wafer platform in the medium energy ion implanter. The apparatus includes a process chamber that has a cavity and a wafer platform therein, a window that is substantially transparent to laser energy mounted in a top wall of the chamber, and a laser emitter and receiver positioned outside the process chamber juxtaposed to the window for emitting a laser beam onto a wafer positioned on the wafer platform and receiving a reflected laser beam to determine a tilt angle of the wafer platform by the intensity of the reflected laser beam.

Abstract: A substrate holding mechanism which is particularly adaptable to automatically centering a semiconductor wafer on a platen spider as the wafer is lowered from a wafer loading and unloading position to a wafer processing position in a medium current implanter such as a Varian EHP500. Upon subsequent placement of a mechanical clamp on the wafer to hold the wafer on the platen, the clamp fingers of the clamp engage the edge of the wafer with substantially uniform pressure to prevent micro-cracking or fracturing of the wafer.

Abstract: The present invention provides a wafer tweezer assembling device by utilizing a chuck member and a plurality of tweezer blades separated by spacers having a predetermined thickness such that the mounting and the calibration of the tweezer can be accomplished in one operation without the need of further calibration steps after the assembling process.