Abstract: An electronic device includes a panel. The panel includes a plurality of scan electrodes, a plurality of data electrodes and a cholesteric liquid crystal layer. The plurality of data electrodes and the plurality of scan electrodes are intersected with each other to define a plurality of pixels. The cholesteric liquid crystal layer is disposed between the plurality of scan electrodes and the plurality of data electrodes. In a writing mode, a first voltage difference is applied to at least one pixel disposed in a writing area, and a second voltage difference is applied to at least a portion of the other pixels disposed in a non-writing area. In an erasing mode, a third voltage difference is applied to at least one pixel disposed in an erasing area, where the first voltage difference is different from the second voltage difference, and the first voltage difference is different from the third voltage difference.

Abstract: A display device is provided with a first panel including multiple first electrodes and multiple second electrodes intersecting with each other to define multiple pixels, and a cholesteric liquid crystal layer disposed between the first electrodes and the second electrodes. The pixels each operate through multiple phases, including the preparation phase, selection phase and evolution phase, each of which includes a high wave phase and a low wave phase. When one of the pixels operates in the low wave phase of the selection phase, one of the first electrodes corresponding the one of the pixels is applied with a first voltage waveform, one of the second electrodes corresponding to the one of the multiple pixels is applied with a second voltage waveform, and the cholesteric liquid crystal layer corresponding to the one of the multiple pixels receives a first voltage difference, which is not equal to zero.

Abstract: An electronic device includes a panel. The panel includes a plurality of scan electrodes, a plurality of data electrodes and a cholesteric liquid crystal layer. The plurality of data electrodes and the plurality of scan electrodes are intersected with each other to define a plurality of pixels. The cholesteric liquid crystal layer is disposed between the plurality of scan electrodes and the plurality of data electrodes. In a writing mode, a first voltage difference is applied to at least one pixel disposed in a writing area, and a second voltage difference is applied to at least a portion of the other pixels disposed in a non-writing area. In an erasing mode, a third voltage difference is applied to at least one pixel disposed in an erasing area, where the first voltage difference is different from the second voltage difference, and the first voltage difference is different from the third voltage difference.

Abstract: An electronic device is provided. The electronic device includes a display, a substrate, and an anti-explosion layer. The substrate is disposed on the display. The anti-explosion layer is disposed between the substrate and the display, and the anti-explosion layer has a tensile strength in a range from 10 MPa to 30 MPa.

Abstract: A method for recognizing a fingerprint of a subject includes the following steps: providing a display device, which includes: a plurality of fingerprint recognition units, a plurality of first sub-pixel regions with a first color, a plurality of second sub-pixel regions with a second color, and a plurality of third sub-pixel regions with a third color, wherein the first color, the second color, and the third color are different; defining a recognition area by disposing a finger of the subject on the display device when the display device is in a fingerprint recognition mode; and enabling at least one of the plurality of first sub-pixel regions disposed in the recognition area, and disabling at least one of the plurality of second sub-pixel regions and the plurality of third sub-pixel regions disposed in the recognition area when the display device is in the fingerprint recognition mode.

Abstract: An electronic device is provided. The electronic device includes a display, a substrate, and an anti-explosion layer. The substrate is disposed on the display. The anti-explosion layer is disposed between the substrate and the display, and the anti-explosion layer has a tensile strength in a range from 10 MPa to 30 MPa.

Abstract: The present invention relates to a method for preparing self-assembled silicon nanotubes (SiNTs) by a hydrothermal method. A method for preparing self-assembled SiNTs comprises forming a mixture of silicon oxide and water in a sealed container, wherein the mixture has a silicon oxide to water ratio of no more than 10% by weight. The mixture is maintained at a constant temperature and a constant pressure, and the mixture is stirred for a period of time. Self-assembled SiNTs may be formed with an average inner diameter of less than 5 nm and an average outer diameter of around 15 nm. The present invention completely utilizes non-toxic raw materials, and the materials and process do not pollute the environment, so the method satisfies the development trends of the modern industry.

Abstract: An automated tracking and control system measures the lateral displacement of a moving belt, using non-contact sensing. The displacement signal is provided to an algorithm that adjusts the tilts of the belt pulleys and steers the belt laterally. Non-contact sensors include inductive proximity sensors, which respond to the metal belt but are immune to airborne slurry and other non-metallic debris in a hostile environment typical of wafer polishing. Other non-contact sensors include shielded optical sensors. Dual sensor configurations cancel response to non-lateral displacements. Instrumentation, such as tension sensors, cylinder pressure sensors, load transducers, and limit switches, provides input to the algorithm. Independent tension signals for each belt edge verify proper functioning of, e.g., pad conditioners. User-specified belt displacements, e.g.

Abstract: A process for creating a crown shaped storage node structure, for a DRAM capacitor structure, featuring the use of a silicon oxynitride layer, underlying the crown shaped storage node structure, has been developed. A silicon oxynitride layer is placed overlying the interlevel dielectric layers that used to protect underlying DRAM elements, and placed underlying a capacitor opening in an overlying insulator layer. A selective RIE procedure is used to create the capacitor opening, in an insulator layer, with the RIE procedure terminating at the exposure of the underlying silicon oxynitride layer. After creation of the crown shaped storage node structure, in the capacitor opening, overlying the silicon oxynitride layer at the bottom of the capacitor opening, the insulator layer used for formation of the capacitor opening, is selectively removed from the regions of silicon oxynitride layer, not covered by the overlying crown shaped storage node structure, using wet etch procedures.

Abstract: This invention describes the fabrication and use of a self-aligning phase shifting mask comprised of phase shifting material formed over a patterned layer of half-tone or partially transmitting material. The interaction of light passing through the phase shifting and partially transmitting areas of the mask, the phase shifting only areas of the mask, and the non phase shifting transparent areas of the mask provides greater image resolution and depth of focus tolerance than other lithography methods including other known phase shifting techniques.