Abstract: The present disclosure relates generally to indicating an end of life condition of an electrochemical device, and more particularly to systems and methods for sensing and determining an end of life condition in a cell comprising a high capacity cathode material suitable for use in a non-aqueous electrochemical cell. The high capacity cathode material has an amorphous or semi-crystalline form of copper manganese oxide, and optionally fluorinated carbon. The present disclosure additionally relates to transmitting the determined end of life condition to a user or monitoring device of the cell.

Abstract: The present disclosure relates generally to a high capacity cathode material suitable for use in a non-aqueous electrochemical cell that comprises copper manganese oxide, which may be in amorphous or semi-crystalline form, and optionally fluorinated carbon. The present disclosure additionally relates to a non-aqueous electrochemical cell comprising such a cathode material and, in particular, to such a non-aqueous electrochemical cell that can deliver a higher capacity than conventional cell.

Abstract: A method of fabricating a horizontal isolation structure between a deep trench capacitor and a vertical transistor thereon is provided. A deep trench capacitor is in the bottom of a deep trench of a substrate. An insulating layer is formed to partially fill the deep trench and also on the substrate by high-density plasma chemical vapor deposition. The insulating layer on the sidewall of the deep trench and on the substrate is removed to transform the insulating layer in the deep trench to an isolation structure. An alternative approach is to form an insulating layer on the substrate and in the deep trench. Then a CMP is performed to remove the insulating layer on the substrate and an etching back is performed to remove the upper portion of the insulating layer in the deep trench. Then the remained insulating layer in the deep trench is served as an isolation structure between the deep trench capacitor and a vertical transistor thereron.