Abstract: A photovoltaic cell structure includes a substrate, a metal layer, a p-type semiconductor layer, an n-type semiconductor layer, a high resistivity layer, an assistant electrode layer, and a transparent conductive layer. The metal layer is formed on the substrate, and comprises a plurality of p-type electrode units separated from each other. The p-type semiconductor layer is formed on the metal layer. The n-type semiconductor is formed on the p-type semiconductor layer, thereby forming a p-n junction. The high resistivity layer is formed on the n-type semiconductor layer. The assistant electrode layer is formed on the high resistivity layer and the p-type electrode units. The transparent conductive layer is formed on the assistant electrode layer, the high resistivity layer and the p-type electrode units. Accordingly, at least one cell is formed on each of the p-type electrode units. The assistant electrode layer and the transparent conductive layer are connected to the cells in series.

Abstract: A photovoltaic cell structure includes a substrate, a metal layer, a p-type semiconductor layer, an n-type semiconductor layer, a transparent conductive layer and a high resistivity layer. The metal layer is formed on the substrate. The p-type semiconductor layer is formed on the metal layer and may include a compound of copper indium gallium selenium sulfur (CIGSS), copper indium gallium selenium (CIGS), copper indium sulfur (CIS), copper indium selenium (CIS) or a compound of at least two of copper, selenium or sulfur. The n-type semiconductor layer exhibits photo catalyst behavior that can increase carrier mobility by receiving light, and is formed on the p-type semiconductor layer, thereby forming a p-n junction. The transparent conductive layer is formed on the n-type semiconductor layer. The high resistivity layer is formed between the metal layer and the transparent conductive layer.

Abstract: A photovoltaic cell structure includes a substrate, a metal layer, a high resistivity layer, a p-type semiconductor layer, an n-type semiconductor layer and a transparent conductive layer. The metal layer may include molybdenum and be formed on the substrate to be a back contact metal layer of the cell. The high resistivity layer (e.g., V2O5) is formed on the metal layer. The p-type semiconductor layer is formed on the high resistivity layer and may include compound of CIGS or CIS. The n-type semiconductor layer (e.g., CdS) is formed on the p-type semiconductor layer, thereby forming a p-n junction. The transparent conductive layer is formed on the n-type semiconductor layer.

Abstract: A photovoltaic cell structure includes a substrate, a metal layer, a p-type semiconductor layer, an n-type semiconductor layer and a transparent conductive layer. The substrate has a rough surface. The metal layer may include molybdenum and be formed on the rough surface. The p-type semiconductor layer is formed on the metal layer and may include CIGSS, CIGS, CIS, or compound of two or more of copper, selenium, sulfur. The n-type semiconductor layer is formed on the p-type semiconductor layer thereby forming a rough p-n junction surface. The n-type semiconductor layer may include CdS. The transparent conductive layer is formed on the n-type semiconductor layer. In an embodiment, the roughness Ra of the rough surface is between 0.01 to 100 ?m.