Patents by Inventor Chi-Hei Lin

Chi-Hei Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6653188
    Abstract: The present invention provides a method for forming a floating gate with a poly tip. The method includes the step of providing a semiconductor substrate with a gate dielectric layer formed on the semiconductor substrate. A first polysilicon layer is then formed on the gate dielectric layer. A hard mask layer is formed on the first polysilicon layer. Then, an opening is formed in the hard mask layer to expose a portion of the first polysilicon layer. Next, a poly spacer is formed in the opening. Then, the hard mask layer and the first polysilicon layer thereunder are removed to form the floating gate.
    Type: Grant
    Filed: November 13, 2002
    Date of Patent: November 25, 2003
    Assignee: Nanya Technology Corp.
    Inventors: Yung-Meng Huang, Chi-Hei Lin, Ching-Nan Hsiao
  • Publication number: 20030211688
    Abstract: The present invention provides a method for forming a floating gate with a poly tip. The method includes the step of providing a semiconductor substrate with a gate dielectric layer formed on the semiconductor substrate. A first polysilicon layer is then formed on the gate dielectric layer. A hard mask layer is formed on the first polysilicon layer. Then, an opening is formed in the hard mask layer to expose a portion of the first polysilicon layer. Next, a poly spacer is formed in the opening. Then, the hard mask layer and the first polysilicon layer thereunder are removed to form the floating gate.
    Type: Application
    Filed: November 13, 2002
    Publication date: November 13, 2003
    Applicant: NANYA TECHNOLOGY CORP
    Inventors: Yung-Meng Huang, Chi-Hei Lin, Ching-Nan Hsiao