Abstract: Disclosed herein are IC structures and devices that aim to mitigate proximity effects of deep trench vias. An example IC structure may include a device region having a first face and a second face, the second face being opposite the first face, and further include a conductive via extending between the first face and the second face, wherein the conductive via includes an electrically conductive material, and wherein a concentration of titanium at sidewalls of the conductive via is below about 1015 atoms per cubic centimeter.

Abstract: Integrated circuit structures having differential epitaxial source or drain dent are described. For example, an integrated circuit structure includes a first sub-fin structure beneath a first stack of nanowires or fin. A second sub-fin structure is beneath a second stack of nanowires or fin. A first epitaxial source or drain structure is at an end of the first stack of nanowires of fin, the first epitaxial source or drain structure having no dent or a shallower dent therein. A second epitaxial source or drain structure is at an end of the second stack of nanowires or fin, the second epitaxial source or drain structure having a deeper dent therein.

Abstract: Techniques to form low-resistance vias are discussed. In an example, semiconductor devices of a given row each include a semiconductor region extending in a first direction between corresponding source or drain regions, and a gate structure extending in a second direction over the semiconductor regions. Any semiconductor device may be separated from an adjacent semiconductor device along the second direction by a dielectric structure, through which a via passes. The via may include a conductive portion that extends through a dielectric wall in a third direction along at least an entire thickness of the gate structure. The conductive portion includes a conductive liner directly on the dielectric wall and a conductive fill on the conductive liner. The conductive liner comprises a pure elemental metal, such as tungsten, molybdenum, ruthenium, or a nickel aluminum alloy, with no metal nitride or barrier layer present between the conductive liner and the dielectric wall.

Abstract: Methods and devices for determining whether a mobile device has been compromised. The mobile device has a managed portion of memory and an unmanaged portion of memory, a managed profile and an unmanaged profile, and the managed profile includes files stored in the managed portion of memory and the unmanaged profile includes files stored in the unmanaged portion of memory. The managed profile is governed by a device policy set by a remote administrator. File tree structure information for the unmanaged profile of the mobile device is obtained that details at least a portion of a tree-based structure of folders and files in the unmanaged portion of memory. It is determined from the file tree structure information that the mobile device has been compromised and, based on that determination, an action is taken.

Abstract: Disclosed herein are integrated circuit (IC) devices with contacts using nitridized molybdenum. For example, a contact arrangement for an IC device may include a semiconductor material and a contact extending into a portion of the semiconductor material. The contact may include molybdenum. The molybdenum may be in a first layer and a second layer, where the second layer may further include nitrogen. The first layer may have a thickness between about 5 nanometers and 16 nanometers, and the second layer may have a thickness between about 0.5 nanometers to 2.5 nanometers. The contact may further include a fill material (e.g., an electrically conductive material) and the second layer may be in contact with the fill material. The molybdenum may have a low resistance, and thus may improve the electrical performance of the contact. The nitridized molybdenum may prevent oxidation during the fabrication of the contact.

Abstract: Contacts to p-type source/drain regions comprise a boride, indium, or gallium metal compound layer. The boride, indium, or gallium metal compound layers can aid in forming thermally stable low resistance contacts. A boride, indium, or gallium metal compound layer is positioned between the source/drain region and the contact metal layer. A boride, indium, or gallium metal compound layer can be used in contacts contacting p-type source/drain regions comprising boron, indium, or gallium as the primary dopant, respectively. The boride, indium, or gallium metal compound layers prevent diffusion of boron, indium, or gallium from the source/drain region into the metal contact layer and dopant deactivation in the source/drain region due to annealing and other high-temperature processing steps that occur after contact formation.

Abstract: Semiconductor structures having a source and/or drain with a refractory metal cap, and methods of forming the same, are described herein. In one example, a semiconductor structure includes a channel, a gate, a source, and a drain. The source and drain contain silicon and germanium, and one or both of the source and drain are capped with a semiconductor cap and a refractory metal cap. The semiconductor cap is on the source and/or drain and contains germanium and boron. The refractory metal cap is on the semiconductor cap and contains a refractory metal.

Abstract: In one embodiment, layers comprising Carbon (e.g., Silicon Carbide) are on source/drain regions of a transistor, e.g., before gate formation and metallization, and the layers comprising Carbon are later removed in the manufacturing process to form electrical contacts on the source/drain regions.

Abstract: Contacts to n-type source/drain regions comprise a phosphide or arsenide metal compound layer. The phosphide or arsenide metal compound layers can aid in forming thermally stable low resistance contacts. A phosphide or arsenide metal compound layer is positioned between the source/drain region and the contact metal layer of the contact. A phosphide or arsenic metal compound layer can be used in contacts contacting n-type source/drain regions comprising phosphorous or arsenic as the primary dopant, respectively. The phosphide or arsenide metal compound layers prevent diffusion of phosphorous or arsenic from the source/drain region into the metal contact layer and dopant deactivation in the source/drain region due to annealing and other high-temperature processing steps that occur after contact formation.

Abstract: Integrated circuit structures having source or drain structures with low resistivity are described. In an example, integrated circuit structure includes a fin having a lower fin portion and an upper fin portion. A gate stack is over the upper fin portion of the fin, the gate stack having a first side opposite a second side. A first source or drain structure includes an epitaxial structure embedded in the fin at the first side of the gate stack. A second source or drain structure includes an epitaxial structure embedded in the fin at the second side of the gate stack. Each epitaxial structure of the first and second source or drain structures include silicon, germanium, gallium and boron. The first and second source or drain structures have a resistivity less than 2E-9 Ohm cm2.

Abstract: Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, integrated circuit structures having source or drain structures with selective silicide contacts thereon are described. In an example, an integrated circuit structure includes a plurality of stacks of nanowires. A plurality of epitaxial source or drain structures is around ends of corresponding ones of the stacks of nanowires. A silicide layer is on an entirety of a top surface of the plurality of epitaxial source or drain structures. A conductive trench contact is on the silicide layer. A dielectric layer is vertically intervening between a portion of the conductive trench contact and the silicide layer.

Abstract: Methods and devices for determining whether a mobile device has been compromised. File tree structure information for the mobile device is obtained that details at least a portion of a tree-based structure of folders and files in a portion of memory. The file tree structure information is analyzed to determine that the mobile device has been compromised, has not been compromised, or might be compromised. Based on determining that the mobile device might be compromised, the mobile device is instructed to execute a restricted action. If the restricted action occurs on the mobile device then it is determined that the mobile device has been compromised. Based on that determination, an action is taken.

Abstract: Contact over active gate (COAG) structures with trench contact layers, and methods of fabricating contact over active gate (COAG) structures using trench contact layers, are described. In an example, an integrated circuit structure includes a gate structure. An epitaxial source or drain structure is adjacent to the gate structure. A conductive trench contact structure is on the epitaxial source or drain structure. The conductive trench contact structure includes a first planar layer on the epitaxial source or drain structure, a second planar layer on the first planar layer, and a conductive fill material on the second planar layer.

Abstract: Methods and devices for determining whether a mobile device has been compromised. The mobile device has a managed portion of memory and an unmanaged portion of memory, a managed profile and an unmanaged profile, and the managed profile includes files stored in the managed portion of memory and the unmanaged profile includes files stored in the unmanaged portion of memory. The managed profile is governed by a device policy set by a remote administrator. File tree structure information for the unmanaged profile of the mobile device is obtained that details at least a portion of a tree-based structure of folders and files in the unmanaged portion of memory. It is determined from the file tree structure information that the mobile device has been compromised and, based on that determination, an action is taken.

Abstract: Bi— or multicomponent fibre (3) comprising a reinforcing core (1) of a first material and at least one sheath (2) of a second, thermoplastic or pre-polymerized thermoset material, for the manufacturing of composite parts, the matrix of which composite parts consists of the material of said sheath (2), wherein said first material has a degradation temperature, ignition temperature, glass transition temperature, melting temperature or liquidus temperature which is higher than the melting temperature, flowing temperature, r softening temperature of said second, thermoplastic or pre-polymerized thermoset material, wherein said reinforcing core (1) has a core volume fraction (vf) defined as the volume fraction of the reinforcing core (1) in the bi- or multicomponent fibre (3), which is in the range of 0.3-0.8, and wherein along a longitudinal axis (Z) of the bi- or multicomponent fibre outer surface (4) of the sheath (2) has a corrugated, preferably irregular corrugated shape.

Abstract: Methods and devices for determining whether a computing device has been compromised. File tree structure information for the computing device is obtained that details at least a portion of a tree-based structure of folders and files in a memory on the computing device. It is then determined from the file tree structure information that the computing device is compromised and, based on the determination that the computing device has been compromised, an action is taken.

Abstract: Methods and devices for determining whether a mobile device has been compromised. File tree structure information for the mobile device is obtained that details at least a portion of a tree-based structure of folders and files in a portion of memory. The file tree structure information is analyzed to determine that the mobile device has been compromised, has not been compromised, or might be compromised. Based on determining that the mobile device might be compromised, the mobile device is instructed to execute a restricted action. If the restricted action occurs on the mobile device then it is determined that the mobile device has been compromised. Based on that determination, an action is taken.

Abstract: Gate-all-around integrated circuit structures having confined epitaxial source or drain structures, are described. For example, an integrated circuit structure includes a plurality of nanowires above a sub-fin. A gate stack is over the plurality of nanowires and the sub-fin. Epitaxial source or drain structures are on opposite ends of the plurality of nanowires. The epitaxial source or drain structures comprise germanium and boron, and a protective layer comprises silicon, and germanium that at least partially covers the epitaxial source or drain structures. A conductive contact comprising titanium silicide is on the epitaxial source or drain structures.

Abstract: Methods and devices for determining whether a mobile device has been compromised. The mobile device has a managed portion of memory and an unmanaged portion of memory, a managed profile and an unmanaged profile, and the managed profile includes files stored in the managed portion of memory and the unmanaged profile includes files stored in the unmanaged portion of memory. The managed profile is governed by a device policy set by a remote administrator. File tree structure information for the unmanaged profile of the mobile device is obtained that details at least a portion of a tree-based structure of folders and files in the unmanaged portion of memory. It is determined from the file tree structure information that the mobile device has been compromised and, based on that determination, an action is taken.

Abstract: Embodiments disclosed herein include semiconductor devices with improved contact resistances. In an embodiment, a semiconductor device comprises a semiconductor channel, a gate stack over the semiconductor channel, a source region on a first end of the semiconductor channel, a drain region on a second end of the semiconductor channel, and contacts over the source region and the drain region. In an embodiment, the contacts comprise a silicon germanium layer, an interface layer over the silicon germanium layer, and a titanium layer over the interface layer.