Abstract: Contacts to n-type source/drain regions comprise a phosphide or arsenide metal compound layer. The phosphide or arsenide metal compound layers can aid in forming thermally stable low resistance contacts. A phosphide or arsenide metal compound layer is positioned between the source/drain region and the contact metal layer of the contact. A phosphide or arsenic metal compound layer can be used in contacts contacting n-type source/drain regions comprising phosphorous or arsenic as the primary dopant, respectively. The phosphide or arsenide metal compound layers prevent diffusion of phosphorous or arsenic from the source/drain region into the metal contact layer and dopant deactivation in the source/drain region due to annealing and other high-temperature processing steps that occur after contact formation.

Abstract: Conformal approaches for fabricating contacts, and semiconductor structures having conformal metal contacts, are described. In an example, an integrated circuit structure includes a nanowire or fin coupled to or including a source or drain structure. A dielectric layer is above the source or drain structure. An opening is in the dielectric layer and extends into the source or drain structure, the opening having a bottom and sidewalls. A conductive liner is along the bottom and the sidewalls of the opening. The conductive liner has a thickness variation of less than 10% throughout the conductive liner with respect to the bottom and the sidewalls of the opening, respectively. A conductive fill is on the conductive liner and in a remainder of the opening. A ratio of an area of the conductive fill to the conductive liner in a cross-sectional perspective is at most 3:1.

Abstract: Semiconductor devices and systems with arsenic-doped sources and drains that include phosphorus-doped contact regions, and methods of forming the same, are disclosed herein. In one example, a semiconductor device includes an epitaxial structure and a conductive contact. The epitaxial structure includes silicon, arsenic, and phosphorus, where phosphorus is concentrated in a contact region of the epitaxial structure. The conductive contact is coupled to the contact region of the epitaxial structure, and the conductive contact includes metal.

Abstract: Integrated circuit structures having source or drain structures with vertical trenches having contacts therein are described. In an example, an integrated circuit structure includes a stack of nanowires above a sub-fin. An epitaxial source or drain structure is at an end of the stack of nanowires, the epitaxial source or drain structure having a trench therein. A conductive contact is in the trench and extends above the epitaxial source or drain structure, or an epitaxial layer is along sides and a bottom the trench and a conductive contact is within the epitaxial layer and extends above the epitaxial layer, where the epitaxial layer includes gallium.

Abstract: Embodiments disclosed herein include complementary metal-oxide-semiconductor (CMOS) devices and methods of making such devices. In an embodiment, a CMOS device comprises a first transistor with a first conductivity type, where the first transistor comprises a first source region and a first drain region, and a first interface material over the first source region and the first drain region. In an embodiment, the CMOS device further comprises a second transistor with a second conductivity type that is opposite form the first conductivity type, where the second transistor comprises a second source region and a second drain region, and a second interface material over the second source region and the second drain region.

Abstract: Contact over active gate (COAG) structures with trench contact layers, and methods of fabricating contact over active gate (COAG) structures using trench contact layers, are described. In an example, an integrated circuit structure includes a gate structure. An epitaxial source or drain structure is adjacent to the gate structure. A conductive trench contact structure is on the epitaxial source or drain structure. The conductive trench contact structure includes a first planar layer on the epitaxial source or drain structure, a second planar layer on the first planar layer, and a conductive fill material on the second planar layer.

Abstract: Integrated circuit structures having source or drain structures with low resistivity are described. In an example, integrated circuit structure includes a fin having a lower fin portion and an upper fin portion. A gate stack is over the upper fin portion of the fin, the gate stack having a first side opposite a second side. A first source or drain structure includes an epitaxial structure embedded in the fin at the first side of the gate stack. A second source or drain structure includes an epitaxial structure embedded in the fin at the second side of the gate stack. Each epitaxial structure of the first and second source or drain structures include silicon, germanium, gallium and boron. The first and second source or drain structures have a resistivity less than 2E-9 Ohm cm2.

Abstract: Disclosed herein are IC structures and devices that aim to mitigate proximity effects of deep trench vias. An example IC structure may include a device region having a first face and a second face, the second face being opposite the first face, and further include a conductive via extending between the first face and the second face, wherein the conductive via includes an electrically conductive material, and wherein a concentration of titanium at sidewalls of the conductive via is below about 1015 atoms per cubic centimeter.

Abstract: Source and drain contacts that provide improved contact resistance and contact interface stability for transistors employing silicon and germanium source and drain materials, related transistor structures, integrated circuits, systems, and methods of fabrication are disclosed. Such source and drain contacts include a contact layer of co-deposited titanium and silicon on the silicon and germanium source and drain. The disclosed source and drain contacts improve transistor performance including switching speed and reliability.

Abstract: Integrated circuit structures having epitaxial nubs for uniform grid metal gate and trench contact cut are described. A structure includes a vertical stack of horizontal nanowires, individual ones of the nanowires having a corresponding epitaxial source or drain structure at an end of the nanowire, the epitaxial source or drain structures discontinuous with one another along the vertical stack of horizontal nanowires. A gate electrode is over the vertical stack of horizontal nanowires. A conductive trench contact is adjacent to the gate electrode, the conductive trench contact vertically surrounding individual ones of the epitaxial source or drain structures. A dielectric sidewall spacer is between the gate electrode and the conductive trench contact. A dielectric cut plug structure extends through the gate electrode, through the dielectric sidewall spacer, and through the conductive trench contact.

Abstract: Embodiments disclosed herein include semiconductor devices with improved contact resistances. In an embodiment, a semiconductor device comprises a semiconductor channel, a gate stack over the semiconductor channel, a source region on a first end of the semiconductor channel, a drain region on a second end of the semiconductor channel, and contacts over the source region and the drain region. In an embodiment, the contacts comprise a silicon germanium layer, an interface layer over the silicon germanium layer, and a titanium layer over the interface layer.

Abstract: An integrated circuit structure includes laterally adjacent first and second devices. The first device includes (i) a first source or drain region having a first plurality of portions, (ii) a first plurality of bodies, each body of the first plurality of bodies laterally extending from a corresponding one of the first plurality of portions, and (iii) a first source or drain contact including a first conductive material and coupled to the first plurality of portions. The second device includes (i) a second source or drain region having a second plurality of portions, (ii) a second plurality of bodies, each body of the second plurality of bodies laterally extending from a corresponding one of the second plurality of portions, and (iii) a second source or drain contact coupled to the second plurality of portions and including a second conductive material elementally different from the first conductive material.

Abstract: Disclosed herein are IC structures and devices that aim to mitigate proximity effects of deep trench vias. An example IC structure may include a device region having a first face and a second face, the second face being opposite the first face, and further include a conductive via extending between the first face and the second face, wherein the conductive via includes an electrically conductive material, and wherein a concentration of titanium at sidewalls of the conductive via is below about 1015 atoms per cubic centimeter.

Abstract: Techniques to form low-resistance vias are discussed. In an example, semiconductor devices of a given row each include a semiconductor region extending in a first direction between corresponding source or drain regions, and a gate structure extending in a second direction over the semiconductor regions. Any semiconductor device may be separated from an adjacent semiconductor device along the second direction by a dielectric structure, through which a via passes. The via may include a conductive portion that extends through a dielectric wall in a third direction along at least an entire thickness of the gate structure. The conductive portion includes a conductive liner directly on the dielectric wall and a conductive fill on the conductive liner. The conductive liner comprises a pure elemental metal, such as tungsten, molybdenum, ruthenium, or a nickel aluminum alloy, with no metal nitride or barrier layer present between the conductive liner and the dielectric wall.

Abstract: Integrated circuit structures having differential epitaxial source or drain dent are described. For example, an integrated circuit structure includes a first sub-fin structure beneath a first stack of nanowires or fin. A second sub-fin structure is beneath a second stack of nanowires or fin. A first epitaxial source or drain structure is at an end of the first stack of nanowires of fin, the first epitaxial source or drain structure having no dent or a shallower dent therein. A second epitaxial source or drain structure is at an end of the second stack of nanowires or fin, the second epitaxial source or drain structure having a deeper dent therein.

Abstract: Disclosed herein are integrated circuit (IC) devices with contacts using nitridized molybdenum. For example, a contact arrangement for an IC device may include a semiconductor material and a contact extending into a portion of the semiconductor material. The contact may include molybdenum. The molybdenum may be in a first layer and a second layer, where the second layer may further include nitrogen. The first layer may have a thickness between about 5 nanometers and 16 nanometers, and the second layer may have a thickness between about 0.5 nanometers to 2.5 nanometers. The contact may further include a fill material (e.g., an electrically conductive material) and the second layer may be in contact with the fill material. The molybdenum may have a low resistance, and thus may improve the electrical performance of the contact. The nitridized molybdenum may prevent oxidation during the fabrication of the contact.

Abstract: In one embodiment, layers comprising Carbon (e.g., Silicon Carbide) are on source/drain regions of a transistor, e.g., before gate formation and metallization, and the layers comprising Carbon are later removed in the manufacturing process to form electrical contacts on the source/drain regions.

Abstract: Semiconductor structures having a source and/or drain with a refractory metal cap, and methods of forming the same, are described herein. In one example, a semiconductor structure includes a channel, a gate, a source, and a drain. The source and drain contain silicon and germanium, and one or both of the source and drain are capped with a semiconductor cap and a refractory metal cap. The semiconductor cap is on the source and/or drain and contains germanium and boron. The refractory metal cap is on the semiconductor cap and contains a refractory metal.

Abstract: Contacts to p-type source/drain regions comprise a boride, indium, or gallium metal compound layer. The boride, indium, or gallium metal compound layers can aid in forming thermally stable low resistance contacts. A boride, indium, or gallium metal compound layer is positioned between the source/drain region and the contact metal layer. A boride, indium, or gallium metal compound layer can be used in contacts contacting p-type source/drain regions comprising boron, indium, or gallium as the primary dopant, respectively. The boride, indium, or gallium metal compound layers prevent diffusion of boron, indium, or gallium from the source/drain region into the metal contact layer and dopant deactivation in the source/drain region due to annealing and other high-temperature processing steps that occur after contact formation.

Abstract: Contacts to n-type source/drain regions comprise a phosphide or arsenide metal compound layer. The phosphide or arsenide metal compound layers can aid in forming thermally stable low resistance contacts. A phosphide or arsenide metal compound layer is positioned between the source/drain region and the contact metal layer of the contact. A phosphide or arsenic metal compound layer can be used in contacts contacting n-type source/drain regions comprising phosphorous or arsenic as the primary dopant, respectively. The phosphide or arsenide metal compound layers prevent diffusion of phosphorous or arsenic from the source/drain region into the metal contact layer and dopant deactivation in the source/drain region due to annealing and other high-temperature processing steps that occur after contact formation.