Patents by Inventor Chi Ho Kim
Chi Ho Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11975296Abstract: A pore-filled ion exchange polyelectrolyte composite membrane from which the surface ion exchange polyelectrolyte has been removed and a method of manufacturing the same are provided. The ion exchange polyelectrolyte composite membrane exhibits low film resistance and low in-plane-direction swelling degree, and has a smaller film-thickness than a commercial film, and thus, can be used for various purposes. In addition, since the pore-filled ion exchange polyelectrolyte composite membrane is continuously manufactured through a roll-to-roll process, the manufacturing process is simple, and manufacturing costs can be greatly reduced.Type: GrantFiled: April 29, 2019Date of Patent: May 7, 2024Assignee: Toray Advanced Materials Korea Inc.Inventors: Young Woo Choi, Mi Soon Lee, Tae Young Kim, Young Gi Yoon, Beom Jun Kim, Min Ho Seo, Chi Young Jung, Jong Min Lee, Nam-jo Jeong, Seung Cheol Yang, Ji Yeon Choi
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Patent number: 11980045Abstract: Provided are an organic electronic element comprising an anode, a cathode, and an organic material layer between the anode and the cathode, and an electronic device comprising the organic electronic element, wherein the organic material layer comprises each compound represented by Formula 1, Formula 2, or Formula 3, thereby the driving voltage of the organic electronic element can be lowered and the luminous efficiency and lifespan can be improved.Type: GrantFiled: March 15, 2023Date of Patent: May 7, 2024Assignee: DUK SAN NEOLUX CO., LTD.Inventors: Hyo Min Jin, Bu Yong Yun, Jae Ho Kim, Hyung Dong Lee, Chi Hyun Park
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Publication number: 20240138174Abstract: Provided are an organic electronic element comprising an anode, a cathode, and an organic material layer between the anode and the cathode, and an electronic device comprising the organic electronic element, wherein the organic material layer comprises each compound represented by Formula 1, Formula 2, or Formula 3, thereby the driving voltage of the organic electronic element can be lowered and the luminous efficiency and lifespan can be improved.Type: ApplicationFiled: March 15, 2023Publication date: April 25, 2024Applicant: DUK SAN NEOLUX CO., LTD.Inventors: Hyo Min JIN, Bu Yong YUN, Jae Ho KIM, Hyung Dong LEE, Chi Hyun PARK
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Patent number: 11963467Abstract: An electronic device includes a semiconductor memory. A method for fabricating the electronic device includes forming a first memory cell extending vertically from a surface of substrate and having a first upper portion that protrudes laterally, forming a second memory cell extending vertically from the surface of the substrate and having a second upper portion that protrudes laterally towards the first upper portion, and forming a liner layer over the first and second memory cells, the liner layer having a first portion disposed over the first upper portion and a second portion disposed over the second upper portion, the first and second portions of the liner layer contacting each other.Type: GrantFiled: May 13, 2022Date of Patent: April 16, 2024Assignee: SK hynix Inc.Inventors: Hyo-June Kim, Hyun-Seok Kang, Chi-Ho Kim, Jae-Geun Oh
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Publication number: 20240116184Abstract: An automated gas supply system includes a gas cylinder transfer unit configured to transfer a cradle in which one or more gas cylinders storing a gas therein are stored; a gas cylinder inspection unit configured to check properties of the gas stored in the gas cylinder transferred from the gas cylinder transfer unit and check whether the gas leaks from the gas cylinder; a storage queue configured to receive the gas cylinder from the gas cylinder inspection unit by a mobile robot and configured to classify and store the transferred gas cylinders according to the properties of the gas stored in the gas cylinder; and a gas cabinet configured to receive the gas cylinder from the storage queue by the mobile robot and fasten a gas pipe, which is connected to a semiconductor manufacturing process line, to a gas spray nozzle, which is disposed at one side of the received gas cylinder, to supply the gas stored in the gas cylinder to the semiconductor manufacturing process line, wherein the gas cabinet includes a residType: ApplicationFiled: December 20, 2023Publication date: April 11, 2024Applicant: Samsung Electronics Co., Ltd.Inventors: Min Sung HA, Kwang-Jun KIM, Jong Kyu KIM, Hyun-Joong KIM, Jin Ho SO, Chi-Gun AN, Ki Moon LEE, Hui Gwan LEE, Beom Soo HWANG
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Publication number: 20240084259Abstract: The present invention relates to stem cell-derived mature cardiomyocytes and a cardiovascular disease model using same and, more specifically, to differentiation into mature ventricular cardiomyocytes by culturing stem cells in a medium containing FGF4 and ascorbic acid, and use of the differentiated mature ventricular cardiomyocytes as a cardiovascular disease cell model. The mature ventricular cardiomyocytes, obtained by culturing stem cells in a medium containing FGF4 and ascorbic acid and inducing the differentiation thereof, and cardiovascular disease cell model using same according to the present invention are very useful for screening for cardiovascular disease therapeutic agents and evaluation of the toxicity of new drugs.Type: ApplicationFiled: November 13, 2019Publication date: March 14, 2024Applicant: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATIONInventors: Do-Sun LIM, Seung Cheol CHOI, Hyung Joon JOO, Jong-Ho KIM, Chi-Yeon PARK, Yongdoo PARK
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Publication number: 20240079584Abstract: The present disclosure discloses a positive electrode active material for a lithium secondary battery comprising a secondary particle having an average particle size (D50) of 1 to 15 ?m, formed by agglomeration of at least two primary macro particles having an average particle size (D50) of 0.1 to 3 ?m; and a coating layer of a lithium-metal oxide on a surface of the secondary particle, wherein the primary macro particles are represented by LiaNi1-x-yCoxM1yM2wO2 (1.0?a?1.5, 0?x?0.2, 0?y?0.2, 0?w?0.1, 0?x+y?0.2, M1 includes at least one metal of Mn or Al, and M2 includes at least one metal selected from the group consisting of Ba, Ca, Zr, Ti, Mg, Ta, Nb and Mo), and wherein the lithium-metal oxide is a low-temperature phase LixCoO2(0<x?1) having at least one of a spinel structure (Fd-3m) or a disordered rock-salt structure (Fm-3m).Type: ApplicationFiled: February 7, 2022Publication date: March 7, 2024Applicant: LG Energy Solution, Ltd.Inventors: Jong-Wook Heo, Ji-Hye Kim, Tae-Gu Yoo, Wang-Mo Jung, Hae-Jung Jung, Chi-Ho Jo
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Publication number: 20220278275Abstract: An electronic device includes a semiconductor memory. A method for fabricating the electronic device includes forming a first memory cell extending vertically from a surface of substrate and having a first upper portion that protrudes laterally, forming a second memory cell extending vertically from the surface of the substrate and having a second upper portion that protrudes laterally towards the first upper portion, and forming a liner layer over the first and second memory cells, the liner layer having a first portion disposed over the first upper portion and a second portion disposed over the second upper portion, the first and second portions of the liner layer contacting each other.Type: ApplicationFiled: May 13, 2022Publication date: September 1, 2022Inventors: Hyo-June KIM, Hyun-Seok KANG, Chi-Ho KIM, Jae-Geun OH
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Patent number: 11362273Abstract: An electronic device includes a semiconductor memory. A method for fabricating the electronic device includes forming a first memory cell extending vertically from a surface of substrate and having a first upper portion that protrudes laterally, forming a second memory cell extending vertically from the surface of the substrate and having a second upper portion that protrudes laterally towards the first upper portion, and forming a liner layer over the first and second memory cells, the liner layer having a first portion disposed over the first upper portion and a second portion disposed over the second upper portion, the first and second portions of the liner layer contacting each other.Type: GrantFiled: October 22, 2019Date of Patent: June 14, 2022Assignee: SK hynix Inc.Inventors: Hyo-June Kim, Hyun-Seok Kang, Chi-Ho Kim, Jae-Geun Oh
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Patent number: 11271039Abstract: This technology provides an electronic device and a method for fabricating the same. An electronic device in accordance with an implementation of this document may include a substrate including a first portion in a first region and a second portion in a second region; a plurality of memory cells disposed over the first portion of the substrate; a first insulating layer extending over the second portion of the substrate and at least partially filling a space between adjacent ones of the plurality of memory cells; and a second insulating layer disposed over the first insulating layer. The first insulating layer has a dielectric constant smaller than that of the second insulating layer, a thermal conductivity smaller than that of the second insulating layer, or both.Type: GrantFiled: December 11, 2019Date of Patent: March 8, 2022Assignee: SK hynix Inc.Inventors: Chi-Ho Kim, Min-Seon Kang, Hyun-Seok Kang, Hyo-June Kim, Jae-Geun Oh, Su-Jin Chae
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Patent number: 10879461Abstract: In a method for fabricating an electronic device including a semiconductor memory, the method includes: forming stack structures, each of the stack structures including a variable resistance pattern; forming capping layers on the stack structures, the capping layers including an impurity; forming a gap fill layer between the stack structures; and removing the impurity from the capping layers and densifying the gap fill layer by irradiating the capping layers and the gap fill layer with ultraviolet light.Type: GrantFiled: December 5, 2019Date of Patent: December 29, 2020Assignee: SK hynix Inc.Inventors: Hyo June Kim, Chi Ho Kim, Sang Hoon Cho, Eung Rim Hwang
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Publication number: 20200373353Abstract: This technology provides an electronic device and a method for fabricating the same. An electronic device in accordance with an implementation of this document may include a substrate including a first portion in a first region and a second portion in a second region; a plurality of memory cells disposed over the first portion of the substrate; a first insulating layer extending over the second portion of the substrate and at least partially filling a space between adjacent ones of the plurality of memory cells; and a second insulating layer disposed over the first insulating layer. The first insulating layer has a dielectric constant smaller than that of the second insulating layer, a thermal conductivity smaller than that of the second insulating layer, or both.Type: ApplicationFiled: December 11, 2019Publication date: November 26, 2020Inventors: Chi-Ho KIM, Min-Seon KANG, Hyun-Seok KANG, Hyo-June KIM, Jae-Geun OH, Su-Jin CHAE
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Publication number: 20200287131Abstract: An electronic device includes a semiconductor memory. A method for fabricating the electronic device includes forming a first memory cell extending vertically from a surface of substrate and having a first upper portion that protrudes laterally, forming a second memory cell extending vertically from the surface of the substrate and having a second upper portion that protrudes laterally towards the first upper portion, and forming a liner layer over the first and second memory cells, the liner layer having a first portion disposed over the first upper portion and a second portion disposed over the second upper portion, the first and second portions of the liner layer contacting each other.Type: ApplicationFiled: October 22, 2019Publication date: September 10, 2020Inventors: Hyo-June KIM, Hyun-Seok KANG, Chi-Ho KIM, Jae-Geun OH
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Publication number: 20200111956Abstract: In a method for fabricating an electronic device including a semiconductor memory, the method includes: forming stack structures, each of the stack structures including a variable resistance pattern; forming capping layers on the stack structures, the capping layers including an impurity; forming a gap fill layer between the stack structures; and removing the impurity from the capping layers and densifying the gap fill layer by irradiating the capping layers and the gap fill layer with ultraviolet light.Type: ApplicationFiled: December 5, 2019Publication date: April 9, 2020Inventors: Hyo June KIM, Chi Ho KIM, Sang Hoon CHO, Eung Rim HWANG
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Patent number: 10547001Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include a plurality of memory cells each including a variable resistance layer; a substituted dielectric layer filling a space between the plurality of memory cells; and an unsubstituted dielectric layer disposed adjacent to the variable resistance layer of each of the plurality of memory cells, wherein the unsubstituted dielectric layer may include a flowable dielectric material.Type: GrantFiled: January 23, 2018Date of Patent: January 28, 2020Assignee: SK hynix Inc.Inventors: Dae-Gun Kang, Su-Jin Chae, Sung-Kyu Min, Myoung-Sub Kim, Chi-Ho Kim, Su-Yeon Lee
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Patent number: 10535819Abstract: In a method for fabricating an electronic device including a semiconductor memory, the method includes: forming stack structures, each of the stack structures including a variable resistance pattern; forming capping layers on the stack structures, the capping layers including an impurity; forming a gap fill layer between the stack structures; and removing the impurity from the capping layers and densifying the gap fill layer by irradiating the capping layers and the gap fill layer with ultraviolet light.Type: GrantFiled: March 30, 2018Date of Patent: January 14, 2020Assignee: SK HYNIX INC.Inventors: Hyo June Kim, Chi Ho Kim, Sang Hoon Cho, Eung Rim Hwang
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Patent number: 10381410Abstract: An electronic device includes a semiconductor memory that includes: first and second lines spaced apart from each other and crossing each other; a third line spaced apart from the second line and crossing the second line; a first variable resistance element interposed between the first and second lines and overlapping an intersection of the first and second lines; a second variable resistance element interposed between the second and third lines and overlapping an intersection of the second and third lines, a part of the second variable resistance element generating a greater amount of heat than a part of the first variable resistance element when a current flows through the first variable resistance element in an opposite direction to a current flowing through the second variable resistance element; and a material layer serially connected with the second variable resistance element, disposed between the second and third lines, and exhibiting electrical resistance.Type: GrantFiled: November 1, 2018Date of Patent: August 13, 2019Assignee: SK HYNIX INC.Inventors: Chi-Ho Kim, Eung-Rim Hwang, Sang-Hoon Cho
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Publication number: 20190221612Abstract: An electronic device includes a semiconductor memory that includes: first and second lines spaced apart from each other and crossing each other; a third line spaced apart from the second line and crossing the second line; a first variable resistance element interposed between the first and second lines and overlapping an intersection of the first and second lines; a second variable resistance element interposed between the second and third lines and overlapping an intersection of the second and third lines, a part of the second variable resistance element generating a greater amount of heat than a part of the first variable resistance element when a current flows through the first variable resistance element in an opposite direction to a current flowing through the second variable resistance element; and a material layer serially connected with the second variable resistance element, disposed between the second and third lines, and exhibiting electrical resistance.Type: ApplicationFiled: November 1, 2018Publication date: July 18, 2019Inventors: Chi-Ho KIM, Eung-Rim HWANG, Sang-Hoon CHO
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Publication number: 20190088871Abstract: In a method for fabricating an electronic device including a semiconductor memory, the method includes: forming stack structures, each of the stack structures including a variable resistance pattern; forming capping layers on the stack structures, the capping layers including an impurity; forming a gap fill layer between the stack structures; and removing the impurity from the capping layers and densifying the gap fill layer by irradiating the capping layers and the gap fill layer with ultraviolet light.Type: ApplicationFiled: March 30, 2018Publication date: March 21, 2019Inventors: Hyo June KIM, Chi Ho KIM, Sang Hoon CHO, Eung Rim HWANG
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Patent number: RE49923Abstract: A multilayer ceramic capacitor includes: a ceramic body including dielectric layers and first and second internal electrodes disposed to face each other with respective dielectric layers interposed therebetween; and first and second external electrodes disposed on an external surface of the ceramic body, wherein the dielectric layer contains a barium titanate-based powder particle having a core-shell structure including a core and a shell around the core, the shell having a structure in which titanium is partially substituted with an element having the same oxidation number as that of the titanium in the barium titanate-based powder particle and having an ionic radius different from that of the titanium in the barium titanate-based powder particle, and the shell covers at least 30% of a surface of the core.Type: GrantFiled: June 22, 2021Date of Patent: April 16, 2024Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Jin Woo Kim, Jong Ho Lee, Min Gi Sin, Hak Kwan Kim, Chin Mo Kim, Chi Hwa Lee, Hong Seok Kim, Woo Sup Kim, Chang Hwa Park