Abstract: A silicon carbide (SiC) wafer and a positioning-edge processing method thereof are provided. The SiC wafer has a first flat and a second flat. A first rounded corner is respectively disposed at a connection between two ends of the first flat and an edge of the SiC wafer, wherein the first rounded corner has a radius of 1-10 mm. A second rounded corner is respectively disposed at a connection between two ends of the second flat and the edge of the SiC wafer, wherein the second rounded corner has a radius of 1-10 mm. Since the rounded corners at the connections between two ends of the flats and the wafer edges have optimum radii, the yield and quality of the wafer processing may be improved.

Abstract: A novel polishing pad is described. The polishing pad includes a base plate, a main polishing body, a plurality of metal bottom portions, a positive electrode conductive wire and a negative electrode conductive wire. The main polishing body made from a non-conductive material and disposed on the base plate includes a plurality of cavities thereon. The metal bottom portions are disposed in the cavities with each of the cavities having one of the metal bottom portions therein. The positive electrode conductive wire electrically is connected to a positive electrode of a power supply. The negative electrode conductive wire electrically is connected to a negative electrode of the power supply. The positive electrode conductive wire and the negative electrode conductive wire alternatively pass through the base plate and connect to the metal bottom portions respectively.

Abstract: A novel polishing pad is described. The polishing pad includes a base plate, a main polishing body, a plurality of metal bottom portions, a positive electrode conductive wire and a negative electrode conductive wire. The main polishing body made from a non-conductive material and disposed on the base plate includes a plurality of cavities thereon. The metal bottom portions are disposed in the cavities with each of the cavities having one of the metal bottom portions therein. The positive electrode conductive wire electrically is connected to a positive electrode of a power supply. The negative electrode conductive wire electrically is connected to a negative electrode of the power supply. The positive electrode conductive wire and the negative electrode conductive wire alternatively pass through the base plate and connect to the metal bottom portions respectively.