Patents by Inventor Chi-Hsiang Hsu

Chi-Hsiang Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9607923
    Abstract: An electronic device is provided, which includes an electronic element and a heat dissipating element disposed on the electronic element through a thermal conductor, wherein a width of the thermal conductor is smaller than a width of the electronic element. The thermal conductor includes silver to thereby greatly increase the thermal conductivity of the thermal conductor and hence improve the thermal conduction efficiency of the electronic device.
    Type: Grant
    Filed: December 24, 2015
    Date of Patent: March 28, 2017
    Assignee: Siliconware Precision Industries Co., Ltd.
    Inventors: Chung-Jen Hung, Chi-An Pan, Chi-Hsiang Hsu, Liang-Yi Hung
  • Publication number: 20160329261
    Abstract: An electronic device is provided, which includes an electronic element and a heat dissipating element disposed on the electronic element through a thermal conductor, wherein a width of the thermal conductor is smaller than a width of the electronic element. The thermal conductor includes silver to thereby greatly increase the thermal conductivity of the thermal conductor and hence improve the thermal conduction efficiency of the electronic device.
    Type: Application
    Filed: December 24, 2015
    Publication date: November 10, 2016
    Inventors: Chung-Jen Hung, Chi-An Pan, Chi-Hsiang Hsu, Liang-Yi Hung
  • Patent number: 8330169
    Abstract: The present invention is a multi-gas sensor and a method for fabricating the multi-gas sensor. The multi-gas sensor comprises a substrate, an epitaxial layer, a metal oxide layer, a first metal layer, a second metal layer and multiple third metal layers. The method for fabricating the multi-gas sensor comprises steps of forming an epitaxial layer on a substrate; etching the epitaxial layer to form a first epitaxial structure and a second epitaxial structure a fixed distance from the first epitaxial structure; forming a metal oxide layer on the first epitaxial structure; forming a first metal layer that has at least two metal layers on the second epitaxial structure; forming a second metal layer a fixed distance from the first metal layer on the second epitaxial structure; forming third metal layers respectively on the metal oxide layer, the first metal layer and the second metal layer.
    Type: Grant
    Filed: July 6, 2011
    Date of Patent: December 11, 2012
    Assignee: National Cheng Kung University
    Inventors: Wen-Chau Liu, Huey-Ing Chen, Tsung-Han Tsai, Tai-You Chen, Chung-Fu Chang, Chi-Hsiang Hsu
  • Publication number: 20120007099
    Abstract: The present invention is a multi-gas sensor and a method for fabricating the multi-gas sensor. The multi-gas sensor comprises a substrate, an epitaxial layer, a metal oxide layer, a first metal layer, a second metal layer and multiple third metal layers. The method for fabricating the multi-gas sensor comprises steps of forming an epitaxial layer on a substrate; etching the epitaxial layer to form a first epitaxial structure and a second epitaxial structure a fixed distance from the first epitaxial structure; forming a metal oxide layer on the first epitaxial structure; forming a first metal layer that has at least two metal layers on the second epitaxial structure; forming a second metal layer a fixed distance from the first metal layer on the second epitaxial structure; forming third metal layers respectively on the metal oxide layer, the first metal layer and the second metal layer.
    Type: Application
    Filed: July 6, 2011
    Publication date: January 12, 2012
    Applicant: National Cheng Kung University
    Inventors: Wen-Chau Liu, Huey-Ing Chen, Tsung-Han Tsai, Tai-You Chen, Chung-Fu Chang, Chi-Hsiang Hsu
  • Publication number: 20110290003
    Abstract: A gas sensor includes a substrate; a seed layer positioned on the substrate; a zinc-oxide nanostructure formed on the seed layer; a metal nanoparticle formed on the zinc-oxide nanostructure; a first electrode positioned on the zinc-oxide nanostructure; and a second electrode positioned on the zinc-oxide nanostructure apart from the first electrode to electrically connect to the first electrode.
    Type: Application
    Filed: May 25, 2011
    Publication date: December 1, 2011
    Applicant: NATIONAL CHENG KUNG UNIVERSITY
    Inventors: Wen-Chau Liu, Huey-Ing Chen, Tai-You Chen, Tsung-Han Tsai, I-Ping Liu, Chi-Hsiang Hsu