Patents by Inventor Chi-hsiang Shen
Chi-hsiang Shen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230364733Abstract: A chemical mechanical planarization apparatus includes a multi-zone platen comprising a plurality of individually controlled concentric toroids. The rotation direction, rotation speed, applied force, relative height, and temperature of each concentric toroid is individually controlled. Concentric polishing pads are affixed to an upper surface of each of the individually controlled concentric toroids. The chemical mechanical planarization apparatus includes a single central slurry source or includes individual slurry sources for each individually controlled concentric toroid.Type: ApplicationFiled: July 26, 2023Publication date: November 16, 2023Inventors: Ting-Hsun Chang, Hung Yen, Chi-Hsiang Shen, Fu-Ming Huang, Chun-Chieh Lin, Tsung Hsien Chang, Ji Cui, Liang-Guang Chen, Chih Hung Chen, Kei-Wei Chen
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Patent number: 11772228Abstract: A chemical mechanical planarization apparatus includes a multi-zone platen comprising a plurality of individually controlled concentric toroids. The rotation direction, rotation speed, applied force, relative height, and temperature of each concentric toroid is individually controlled. Concentric polishing pads are affixed to an upper surface of each of the individually controlled concentric toroids. The chemical mechanical planarization apparatus includes a single central slurry source or includes individual slurry sources for each individually controlled concentric toroid.Type: GrantFiled: January 17, 2020Date of Patent: October 3, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Ting-Hsun Chang, Hung Yen, Chi-Hsiang Shen, Fu-Ming Huang, Chun-Chieh Lin, Tsung Hsien Chang, Ji Cui, Liang-Guang Chen, Chih Hung Chen, Kei-Wei Chen
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Publication number: 20230294237Abstract: A chemical mechanical polishing (CMP) system includes a polishing pad configured to polish a substrate. The CMP system further includes a heating system configured to adjust a temperature of the polishing pad. The heating system comprises at least one heating element spaced apart from the polishing pad. The CMP system further includes a sensor configured to measure the temperature of the polishing pad.Type: ApplicationFiled: March 21, 2023Publication date: September 21, 2023Inventors: Yi-Sheng LIN, Chi-Hsiang SHEN, Chi-Jen LIU, Chun-Wei Hsu, Yang-Chun CHENG, Kei-Wei CHEN
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Publication number: 20230230846Abstract: The current disclosure describes techniques of protecting a metal interconnect structure from being damaged by subsequent chemical mechanical polishing processes used for forming other metal structures over the metal interconnect structure. The metal interconnect structure is receded to form a recess between the metal interconnect structure and the surrounding dielectric layer. A metal cap structure is formed within the recess. An upper portion of the dielectric layer is strained to include a tensile stress which expands the dielectric layer against the metal cap structure to reduce or eliminate a gap in the interface between the metal cap structure and the dielectric layer.Type: ApplicationFiled: March 15, 2023Publication date: July 20, 2023Inventors: Yi-Sheng LIN, Chi-Jen LIU, Chi-Hsiang SHEN, Te-Ming KUNG, Chun-Wei HSU, Chia-Wei HO, Yang-Chun CHENG, William Weilun HONG, Liang-Guang CHEN, Kei-Wei CHEN
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Patent number: 11658065Abstract: A method for CMP includes following operations. A metal layer is received. A CMP slurry composition is provided in a CMP apparatus. The CMP slurry composition includes at least a first oxidizer and a second oxidizer different from each other. The first oxidizer is oxidized to form a peroxidant by the second oxidizer. A portion of the metal layer is oxidized to form a first metal oxide by the peroxidant. The first metal oxide is re-oxidized to form a second metal oxide by the second oxidizer.Type: GrantFiled: June 15, 2020Date of Patent: May 23, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Ji Cui, Fu-Ming Huang, Ting-Kui Chang, Tang-Kuei Chang, Chun-Chieh Lin, Wei-Wei Liang, Chi-Hsiang Shen, Ting-Hsun Chang, Li-Chieh Wu, Hung Yen, Chi-Jen Liu, Liang-Guang Chen, Kei-Wei Chen
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Patent number: 11637021Abstract: The current disclosure describes techniques of protecting a metal interconnect structure from being damaged by subsequent chemical mechanical polishing processes used for forming other metal structures over the metal interconnect structure. The metal interconnect structure is receded to form a recess between the metal interconnect structure and the surrounding dielectric layer. A metal cap structure is formed within the recess. An upper portion of the dielectric layer is strained to include a tensile stress which expands the dielectric layer against the metal cap structure to reduce or eliminate a gap in the interface between the metal cap structure and the dielectric layer.Type: GrantFiled: May 18, 2021Date of Patent: April 25, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yi-Sheng Lin, Chi-Jen Liu, Chi-Hsiang Shen, Te-Ming Kung, Chun-Wei Hsu, Chia-Wei Ho, Yang-Chun Cheng, William Weilun Hong, Liang-Guang Chen, Kei-Wei Chen
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Patent number: 11633829Abstract: A chemical mechanical polishing (CMP) system includes a polishing pad configured to polish a substrate. The CMP system further includes a heating system configured to adjust a temperature of the polishing pad. The heating system comprises at least one heating element spaced apart from the polishing pad. The CMP system further includes a sensor configured to measure the temperature of the polishing pad.Type: GrantFiled: September 17, 2019Date of Patent: April 25, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yi-Sheng Lin, Chi-Hsiang Shen, Chi-Jen Liu, Chun-Wei Hsu, Yang-Chun Cheng, Kei-Wei Chen
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Publication number: 20230082084Abstract: A method for CMP includes following operations. A metal stack is received. The metal layer stack includes at least a first metal layer and a second metal layer, and a top surface of the first metal layer and a top surface of the second metal layer are exposed. A protecting layer is formed over the second metal layer. A portion of the first metal layer is etched. The protecting layer protects the second metal layer during the etching of the portion of the first metal layer. A top surface of the etched first metal layer is lower than a top surface of the protecting layer. The protecting layer is removed from the second metal layer.Type: ApplicationFiled: November 21, 2022Publication date: March 16, 2023Inventors: JI CUI, FU-MING HUANG, TING-KUI CHANG, TANG-KUEI CHANG, CHUN-CHIEH LIN, WEI-WEI LIANG, LIANG-GUANG CHEN, KEI-WEI CHEN, HUNG YEN, TING-HSUN CHANG, CHI-HSIANG SHEN, LI-CHIEH WU, CHI-JEN LIU
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Publication number: 20220384245Abstract: Methods of forming a slurry and methods of performing a chemical mechanical polishing (CMP) process utilized in manufacturing semiconductor devices, as described herein, may be performed on semiconductor devices including integrated contact structures with ruthenium (Ru) plug contacts down to a semiconductor substrate. The slurry may be formed by mixing a first abrasive, a second abrasive, and a reactant with a solvent. The first abrasive may include a first particulate including titanium dioxide (TiO2) particles and the second abrasive may include a second particulate that is different from the first particulate. The slurry may be used in a CMP process for removing ruthenium (Ru) materials and dielectric materials from a surface of a workpiece resulting in better WiD loading and planarization of the surface for a flat profile.Type: ApplicationFiled: August 5, 2022Publication date: December 1, 2022Inventors: Chia Hsuan Lee, Chun-Wei Hsu, Chia-Wei Ho, Chi-Hsiang Shen, Li-Chieh Wu, Jian-Ci Lin, Chi-Jen Liu, Yi-Sheng Lin, Yang-Chun Cheng, Liang-Guang Chen, Kuo-Hsiu Wei, Kei-Wei Chen
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Patent number: 11508585Abstract: A method for CMP includes following operations. A dielectric structure is received. The dielectric structure includes a metal layer stack formed therein. The metal layer stack includes at least a first metal layer and a second metal layer, and the first metal layer and the second metal layer are exposed through a surface of the dielectric structure. A first composition is provided to remove a portion of the first metal layer from the surface of the dielectric structure. A second composition is provided to form a protecting layer over the second metal layer. The protecting layer is removed from the second metal layer. A CMP operation is performed to remove a portion of the second metal layer. In some embodiments, the protecting layer protects the second metal layer during the removal of the portion of the first metal layer.Type: GrantFiled: June 15, 2020Date of Patent: November 22, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Ji Cui, Fu-Ming Huang, Ting-Kui Chang, Tang-Kuei Chang, Chun-Chieh Lin, Wei-Wei Liang, Liang-Guang Chen, Kei-Wei Chen, Hung Yen, Ting-Hsun Chang, Chi-Hsiang Shen, Li-Chieh Wu, Chi-Jen Liu
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Patent number: 11482450Abstract: Methods of forming a slurry and methods of performing a chemical mechanical polishing (CMP) process utilized in manufacturing semiconductor devices, as described herein, may be performed on semiconductor devices including integrated contact structures with ruthenium (Ru) plug contacts down to a semiconductor substrate. The slurry may be formed by mixing a first abrasive, a second abrasive, and a reactant with a solvent. The first abrasive may include a first particulate including titanium dioxide (TiO2) particles and the second abrasive may include a second particulate that is different from the first particulate. The slurry may be used in a CMP process for removing ruthenium (Ru) materials and dielectric materials from a surface of a workpiece resulting in better WiD loading and planarization of the surface for a flat profile.Type: GrantFiled: February 26, 2021Date of Patent: October 25, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chia Hsuan Lee, Chun-Wei Hsu, Chia-Wei Ho, Chi-Hsiang Shen, Li-Chieh Wu, Jian-Ci Lin, Chi-Jen Liu, Yi-Sheng Lin, Yang-Chun Cheng, Liang-Guang Chen, Kuo-Hsiu Wei, Kei-Wei Chen
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Publication number: 20210391186Abstract: A method for CMP includes following operations. A dielectric structure is received. The dielectric structure includes a metal layer stack formed therein. The metal layer stack includes at least a first metal layer and a second metal layer, and the first metal layer and the second metal layer are exposed through a surface of the dielectric structure. A first composition is provided to remove a portion of the first metal layer from the surface of the dielectric structure. A second composition is provided to form a protecting layer over the second metal layer. The protecting layer is removed from the second metal layer. A CMP operation is performed to remove a portion of the second metal layer. In some embodiments, the protecting layer protects the second metal layer during the removal of the portion of the first metal layer.Type: ApplicationFiled: June 15, 2020Publication date: December 16, 2021Inventors: Ji Cui, Fu-Ming Huang, Ting-Kui Chang, Tang-Kuei Chang, Chun-Chieh Lin, Wei-Wei Liang, Liang-Guang Chen, Kei-Wei Chen, Hung Yen, Ting-Hsun Chang, Chi-Hsiang Shen, Li-Chieh Wu, Chi-Jen Liu
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Publication number: 20210391208Abstract: A method for CMP includes following operations. A metal layer is received. A CMP slurry composition is provided in a CMP apparatus. The CMP slurry composition includes at least a first oxidizer and a second oxidizer different from each other. The first oxidizer is oxidized to form a peroxidant by the second oxidizer. A portion of the metal layer is oxidized to form a first metal oxide by the peroxidant. The first metal oxide is re-oxidized to form a second metal oxide by the second oxidizer.Type: ApplicationFiled: June 15, 2020Publication date: December 16, 2021Inventors: Ji Cui, Fu-Ming Huang, Ting-Kui Chang, Tang-Kuei Chang, Chun-Chieh Lin, Wei-Wei Liang, Chi-Hsiang Shen, Ting-Hsun Chang, Li-Chieh Wu, Hung Yen, Chi-Jen Liu, Liang-Guang Chen, Kei-Wei Chen
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Patent number: 11133247Abstract: A semiconductor device includes a first dielectric layer over a substrate, the first dielectric layer including a first dielectric material extending from a first side of the first dielectric layer distal from the substrate to a second side of the first dielectric layer opposing the first side; a second dielectric layer over the first dielectric layer; a conductive line in the first dielectric layer, the conductive line including a first conductive material, an upper surface of the conductive line being closer to the substrate than an upper surface of the first dielectric layer; a metal cap in the first dielectric layer, the metal cap being over and physically connected to the conductive line, the metal cap including a second conductive material different from the first conductive material; and a via in the second dielectric layer and physically connected to the metal cap, the via including the second conductive material.Type: GrantFiled: July 29, 2019Date of Patent: September 28, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Wei Ho, Chun-Wei Hsu, Chi-Hsiang Shen, Chi-Jen Liu, Yi-Sheng Lin, Yang-Chun Cheng, William Weilun Hong, Liang-Guang Chen, Kei-Wei Chen
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Publication number: 20210272818Abstract: The current disclosure describes techniques of protecting a metal interconnect structure from being damaged by subsequent chemical mechanical polishing processes used for forming other metal structures over the metal interconnect structure. The metal interconnect structure is receded to form a recess between the metal interconnect structure and the surrounding dielectric layer. A metal cap structure is formed within the recess. An upper portion of the dielectric layer is strained to include a tensile stress which expands the dielectric layer against the metal cap structure to reduce or eliminate a gap in the interface between the metal cap structure and the dielectric layer.Type: ApplicationFiled: May 18, 2021Publication date: September 2, 2021Inventors: Yi-Sheng LIN, Chi-Jen LIU, Chi-Hsiang SHEN, Te-Ming KUNG, Chun-Wei HSU, Chia-Wei HO, Yang-Chun CHENG, William Weilun HONG, Liang-Guang CHEN, Kei-Wei CHEN
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Patent number: 11094555Abstract: The current disclosure describes a metal surface chemical mechanical polishing technique. A complex agent or micelle is included in the metal CMP slurry. The complex agent bonds with the oxidizer contained in the CMP slurry to form a complex, e.g., a supramolecular assembly, with an oxidizer molecule in the core of the assembly and surrounded by the complex agent molecule(s). The formed complexes have an enlarged size.Type: GrantFiled: May 19, 2020Date of Patent: August 17, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chun-Wei Hsu, Chi-Jen Liu, Kei-Wei Chen, Liang-Guang Chen, William Weilun Hong, Chi-Hsiang Shen, Chia-Wei Ho, Yang-Chun Cheng
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Publication number: 20210220964Abstract: A chemical mechanical planarization apparatus includes a multi-zone platen comprising a plurality of individually controlled concentric toroids. The rotation direction, rotation speed, applied force, relative height, and temperature of each concentric toroid is individually controlled. Concentric polishing pads are affixed to an upper surface of each of the individually controlled concentric toroids. The chemical mechanical planarization apparatus includes a single central slurry source or includes individual slurry sources for each individually controlled concentric toroid.Type: ApplicationFiled: January 17, 2020Publication date: July 22, 2021Inventors: Ting-Hsun Chang, Hung Yen, Chi-Hsiang Shen, Fu-Ming Huang, Chun-Chieh Lin, Tsung Hsien Chang, Ji Cui, Liang-Guang Chen, Chih Hung Chen, Kei-Wei Chen
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Publication number: 20210183688Abstract: Methods of forming a slurry and methods of performing a chemical mechanical polishing (CMP) process utilized in manufacturing semiconductor devices, as described herein, may be performed on semiconductor devices including integrated contact structures with ruthenium (Ru) plug contacts down to a semiconductor substrate. The slurry may be formed by mixing a first abrasive, a second abrasive, and a reactant with a solvent. The first abrasive may include a first particulate including titanium dioxide (TiO2) particles and the second abrasive may include a second particulate that is different from the first particulate. The slurry may be used in a CMP process for removing ruthenium (Ru) materials and dielectric materials from a surface of a workpiece resulting in better WiD loading and planarization of the surface for a flat profile.Type: ApplicationFiled: February 26, 2021Publication date: June 17, 2021Inventors: Chia Hsuan Lee, Chun-Wei Hsu, Chia-Wei Ho, Chi-Hsiang Shen, Li-Chieh Wu, Jian-Ci Lin, Chi-Jen Liu, Yi-Sheng Lin, Yang-Chun Cheng, Liang-Guang Chen, Kuo-Hsiu Wei, Kei-Wei Chen
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Patent number: 11037799Abstract: The current disclosure describes techniques of protecting a metal interconnect structure from being damaged by subsequent chemical mechanical polishing processes used for forming other metal structures over the metal interconnect structure. The metal interconnect structure is receded to form a recess between the metal interconnect structure and the surrounding dielectric layer. A metal cap structure is formed within the recess. An upper portion of the dielectric layer is strained to include a tensile stress which expands the dielectric layer against the metal cap structure to reduce or eliminate a gap in the interface between the metal cap structure and the dielectric layer.Type: GrantFiled: May 1, 2019Date of Patent: June 15, 2021Assignee: Taiwan Semiconductor Manufacturing Co., LtdInventors: Yi-Sheng Lin, Chi-Jen Liu, Kei-Wei Chen, Liang-Guang Chen, Te-Ming Kung, William Weilun Hong, Chi-Hsiang Shen, Chia-Wei Ho, Chun-Wei Hsu, Yang-Chun Cheng
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Publication number: 20210078129Abstract: A chemical mechanical polishing (CMP) system includes a polishing pad configured to polish a substrate. The CMP system further includes a heating system configured to adjust a temperature of the polishing pad. The heating system comprises at least one heating element spaced apart from the polishing pad. The CMP system further includes a sensor configured to measure the temperature of the polishing pad.Type: ApplicationFiled: September 17, 2019Publication date: March 18, 2021Inventors: Yi-Sheng LIN, Chi-Hsiang SHEN, Chi-Jen LIU, Chun-Wei Hsu, Yang-Chun CHENG, Kei-Wei CHEN