Patents by Inventor Chi-Hsiang Tsai

Chi-Hsiang Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12216981
    Abstract: A system (for generating a layout diagram of a wire routing arrangement) includes a processor and memory including computer program code for one or more programs, the system generating the layout diagram including: placing, relative to a given one of masks in a multi-patterning context, a given cut pattern at a first candidate location over a corresponding portion of a given conductive pattern in a metallization layer; determining that the first candidate location results in an intra-row non-circular group of a given row which violates a design rule, the intra-row non-circular group including first and second cut patterns which abut a same boundary of the given row, and a total number of cut patterns in the being an even number; and temporarily preventing placement of the given cut pattern in the metallization layer at the first candidate location until a correction is made which avoids violating the design rule.
    Type: Grant
    Filed: August 10, 2023
    Date of Patent: February 4, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Fong-Yuan Chang, Chin-Chou Liu, Hui-Zhong Zhuang, Meng-Kai Hsu, Pin-Dai Sue, Po-Hsiang Huang, Yi-Kan Cheng, Chi-Yu Lu, Jung-Chou Tsai
  • Publication number: 20250040213
    Abstract: A semiconductor structure includes a source/drain feature in the semiconductor layer. The semiconductor structure includes a dielectric layer over the source/drain feature. The semiconductor structure includes a silicide layer over the source/drain feature. The semiconductor structure includes a barrier layer over the silicide layer. The semiconductor structure includes a seed layer over the barrier layer. The semiconductor structure includes a metal layer between a sidewall of the seed layer and a sidewall of the dielectric layer, a sidewall of each of the silicide layer, the barrier layer, and the metal layer directly contacting the sidewall of the dielectric layer. The semiconductor structure includes a source/drain contact over the seed layer.
    Type: Application
    Filed: July 27, 2023
    Publication date: January 30, 2025
    Applicant: Taiwan Semiconductor Manufacturing Company Ltd.
    Inventors: Yi-Hsiang Chao, Peng-Hao Hsu, Yu-Shiuan Wang, Chi-Yuan Chen, Yu-Hsiang Liao, Chun-Hsien Huang, Hung-Chang Hsu, Wei-Jung Lin, Chih-Wei Chang, Ming-Hsing Tsai
  • Publication number: 20050155710
    Abstract: A load-lock chamber having a gas-sealing bellows to prevent the flow of gases into the chamber through a shaft opening is disclosed. The load-lock chamber includes a chamber wall that defines a chamber interior. A bellows housing is defined by the chamber wall, and a shaft opening provided in the bellows housing. A flexible bellows is provided in the bellows housing and seals the shaft opening from the chamber interior. A lift shaft having a cassette stage extends through the shaft opening and the bellows and into the chamber interior. A shaft rotation device may engage the lift shaft to rotate the lift shaft and cassette stage in the chamber interior.
    Type: Application
    Filed: January 20, 2004
    Publication date: July 21, 2005
    Inventors: Yen-Hsiung Tseng, Chi-Hsiang Tsai, Ming-Te Mo