Patents by Inventor Chi-Hsin HUANG

Chi-Hsin HUANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Giga interposer integration through Chip-On-Wafer-On-Substrate
    Patent number: 11967546
    Abstract: A semiconductor structure includes a first interposer; a second interposer laterally adjacent to the first interposer, where the second interposer is spaced apart from the first interposer; and a first die attached to a first side of the first interposer and attached to a first side of the second interposer, where the first side of the first interposer and the first side of the second interposer face the first die.
    Type: Grant
    Filed: July 21, 2022
    Date of Patent: April 23, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shang-Yun Hou, Hsien-Pin Hu, Sao-Ling Chiu, Wen-Hsin Wei, Ping-Kang Huang, Chih-Ta Shen, Szu-Wei Lu, Ying-Ching Shih, Wen-Chih Chiou, Chi-Hsi Wu, Chen-Hua Yu
  • Actuating and sensing module
    Patent number: 11946569
    Abstract: An actuating and sensing module is disclosed and includes a bottom plate, a gas pressure sensor, a thin gas transportation device and a cover plate. The bottom plate includes a pressure relief orifice, a discharging orifice and a communication orifice. The gas pressure sensor is disposed on the bottom plate and seals the communication orifice. The thin gas transportation device is disposed on the bottom plate and seals the pressure relief orifice and the discharging orifice. The cover plate is disposed on the bottom plate and covers the gas pressure sensor and the thin gas-transportation device. The cover plate includes an intake orifice. The thin gas transportation device is driven to inhale gas through the intake orifice, the gas is then discharged through the discharging orifice by the thin gas transportation device, and a pressure change of the gas is sensed by the gas pressure sensor.
    Type: Grant
    Filed: April 19, 2021
    Date of Patent: April 2, 2024
    Assignee: MICROJET TECHNOLOGY CO., LTD.
    Inventors: Hao-Jan Mou, Shih-Chang Chen, Jia-Yu Liao, Hung-Hsin Liao, Chung-Wei Kao, Chi-Feng Huang, Yung-Lung Han, Chang-Yen Tsai, Wei-Ming Lee
  • Resistive random access memory
    Patent number: 9159918
    Abstract: A resistive random access memory includes a first electrode, a second electrode and a first metal oxide composite layer. The second electrode is opposite to the first electrode. The first metal oxide composite layer is disposed between the first electrode and the second electrode. The first metal oxide composite layer has a film layer and a nanorod structure.
    Type: Grant
    Filed: January 8, 2014
    Date of Patent: October 13, 2015
    Assignee: National Tsing Hua University
    Inventors: Yu-Lun Chueh, Chi-Hsin Huang
  • RESISTIVE RANDOM ACCESS MEMORY
    Publication number: 20140191183
    Abstract: A resistive random access memory includes a first electrode, a second electrode and a first metal oxide composite layer. The second electrode is opposite to the first electrode. The first metal oxide composite layer is disposed between the first electrode and the second electrode. The first metal oxide composite layer has a film layer and a nanorod structure.
    Type: Application
    Filed: January 8, 2014
    Publication date: July 10, 2014
    Applicant: National Tsing Hua University
    Inventors: Yu-Lun CHUEH, Chi-Hsin HUANG