Abstract: An inlet guide vane device having a central axis comprises a first base, a guide sleeve, a blade, a second base, a transmission disk, and an actuator. The first base has at least one first support groove and at least one guide groove. The first support groove extends along a radial direction of the central axis, and the at least one guide groove is located in the first support groove. The guide sleeve is disposed on the first support groove in a manner that the guide sleeve is capable of moving along the radial direction. The guide sleeve has a sliding sleeve, an upper guide post and a lower guide post, the sliding sleeve has a through hole extending along the radial direction. The upper guide post and the lower guide post pass through the sliding groove, and the lower guide post is movably disposed on the guide groove.

Abstract: A semiconductor optoelectronic device comprises a growth substrate; a semiconductor epitaxial stack formed on the growth substrate comprising a sacrificial layer with electrical conductivity formed on the growth substrate; a first semiconductor material layer having a first electrical conductivity formed on the sacrificial layer, and a second semiconductor material layer having a second electrical conductivity formed on the first semiconductor material layer; and a first electrode directly formed on the growth substrate and electrically connected to the semiconductor epitaxial stack via the growth substrate.

Abstract: A semiconductor optoelectronic device comprises an operating substrate; a semiconductor epitaxial stack unit disposed on the operating substrate comprising a first semiconductor material layer having a first electrical conductivity disposed on the operating substrate and a second semiconductor material layer having a second electrical conductivity disposed on the first semiconductor material layer; a transparent conductive layer disposed on the second semiconductor material layer, wherein the transparent conductive layer comprises a first surface, a directly contacting part disposed on the first surface and directly contacting with the second semiconductor material layer, a second surface substantially parallel with the first surface, and a directly contacting corresponding part disposed on the second surface corresponding to the directly contacting part; and a first electrode disposed on the operating substrate and electrically connected with the semiconductor epitaxial stack by the transparent conductive la

Abstract: A method of forming a light-emitting diode includes: providing a substrate having one or more first openings passing through the substrate; forming a sacrificial layer on the substrate; forming an epitaxial layer on the sacrificial layer; connecting a supporting substrate with the epitaxial layer; and separating the substrate from the epitaxial layer by selectively etching the sacrificial layer.

Abstract: An inlet guide van device having a central axis comprises a first base, a guide sleeve, a blade, a second base, a transmission disk, and an actuator. The first base has at least one first support groove and at least one guide groove. The first support groove extends along a radial direction of the central axis, and the at least one guide groove is located in the first support groove. The guide sleeve is disposed on the first support groove in a manner that the guide sleeve is capable of moving along the radial direction. The guide sleeve has a sliding sleeve, an upper guide post and a lower guide post, the sliding sleeve has a through hole extending along the radial direction. The upper guide post and the lower guide post pass through the sliding groove, and the lower guide post is movably disposed on the guide groove.

Abstract: A motor device includes a main body, an assembling body, a stator and a rotor. The main body includes a first bearing hole and a plurality of first connectors, and all distances between each of the first connectors and an axle of the first bearing hole are the same. The assembling body has a second bearing hole. The stator includes a passage and a plurality of second connectors, the second connectors are coupled to the first connectors respectively to have the stator assembled in the main body, and the passage and the first bearing hole are coaxial. The rotor is disposed inside the passage and two ends of the rotor are installed in the first bearing hole and the second bearing hole respectively. By having both the stator and the rotor positioned by the main body, a gap between the rotor and the stator can be maintained consistently.

Abstract: A semiconductor optoelectronic device comprises an operating substrate; a semiconductor epitaxial stack unit disposed on the operating substrate comprising a first semiconductor material layer having a first electrical conductivity disposed on the operating substrate and a second semiconductor material layer having a second electrical conductivity disposed on the first semiconductor material layer; a transparent conductive layer disposed on the second semiconductor material layer, wherein the transparent conductive layer comprises a first surface, a directly contacting part disposed on the first surface and directly contacting with the second semiconductor material layer, a second surface substantially parallel with the first surface, and a directly contacting corresponding part disposed on the second surface corresponding to the directly contacting part; and a first electrode disposed on the operating substrate and electrically connected with the semiconductor epitaxial stack by the transparent conductive la

Abstract: A method of forming a light-emitting diode includes: providing a substrate having one or more first openings passing through the substrate; forming a sacrificial layer on the substrate; forming an epitaxial layer on the sacrificial layer; connecting a supporting substrate with the epitaxial layer; and separating the substrate from the epitaxial layer by selectively etching the sacrificial layer.

Abstract: A semiconductor optoelectronic device comprises an operating substrate; a semiconductor epitaxial stack unit disposed on the operating substrate comprising a first semiconductor material layer having a first electrical conductivity disposed on the operating substrate and a second semiconductor material layer having a second electrical conductivity disposed on the first semiconductor material layer; a transparent conductive layer disposed on the second semiconductor material layer, wherein the transparent conductive layer comprises a first surface, a directly contacting part disposed on the first surface and directly contacting with the second semiconductor material layer, a second surface substantially parallel with the first surface, and a directly contacting corresponding part disposed on the second surface corresponding to the directly contacting part; and a first electrode disposed on the operating substrate and electrically connected with the semiconductor epitaxial stack by the transparent conductive la

Abstract: An improved floating apparatus for scroll compressors is disclosed, which is a multi-function device integrating a temperature protection mechanism, a pressure protection mechanism and a backflow-proof mechanism and therefore substantially is a floating seal member with overheating protection, high pressure protection and backflow-proof capabilities. In detail, the present disclosure provides a floating apparatus for scroll compressors that not only can be manufactured easily, but also capable of distributing the acting force resulting from the gliding block for providing better sealing effect while preventing the scroll compressors from being damaged by high temperature and high pressure.

Abstract: A motor device includes a main body, an assembling body, a stator and a rotor. The main body includes a first bearing hole and a plurality of first connectors, and all distances between each of the first connectors and an axle of the first bearing hole are the same. The assembling body has a second bearing hole. The stator includes a passage and a plurality of second connectors, the second connectors are coupled to the first connectors respectively to have the stator assembled in the main body, and the passage and the first bearing hole are coaxial. The rotor is disposed inside the passage and two ends of the rotor are installed in the first bearing hole and the second bearing hole respectively. By having both the stator and the rotor positioned by the main body, a gap between the rotor and the stator can be maintained consistently.

Abstract: An improved floating apparatus for scroll compressors is disclosed, which is a multi-function device integrating a temperature protection mechanism, a pressure protection mechanism and a backflow-proof mechanism and therefore substantially is a floating seal member with overheating protection, high pressure protection and backflow-proof capabilities. In detail, the present disclosure provides a floating apparatus for scroll compressors that not only can be manufactured easily, but also capable of distributing the acting force resulting from the gliding block for providing better sealing effect while preventing the scroll compressors from being damaged by high temperature and high pressure.

Abstract: A semiconductor optoelectronic device comprises a growth substrate; a semiconductor epitaxial stack formed on the growth substrate comprising a sacrificial layer with electrical conductivity formed on the growth substrate; a first semiconductor material layer having a first electrical conductivity formed on the sacrificial layer, and a second semiconductor material layer having a second electrical conductivity formed on the first semiconductor material layer; and a first electrode directly formed on the growth substrate and electrically connected to the semiconductor epitaxial stack via the growth substrate.

Abstract: A semiconductor optoelectronic device comprises an operating substrate; a semiconductor epitaxial stack unit disposed on the operating substrate comprising a first semiconductor material layer having a first electrical conductivity disposed on the operating substrate and a second semiconductor material layer having a second electrical conductivity disposed on the first semiconductor material layer; a transparent conductive layer disposed on the second semiconductor material layer, wherein the transparent conductive layer comprises a first surface, a directly contacting part disposed on the first surface and directly contacting with the second semiconductor material layer, a second surface substantially parallel with the first surface, and a directly contacting corresponding part disposed on the second surface corresponding to the directly contacting part; and a first electrode disposed on the operating substrate and electrically connected with the semiconductor epitaxial stack by the transparent conductive la

Abstract: A method of forming a light emitting diode is provided. The method includes providing a growth substrate; sequentially forming a sacrificial layer and an epitaxial layer on the growing substrate; forming one or more epitaxial layer openings penetrating the epitaxial layer and exposing the sacrificial layer; forming a supporting layer on the epitaxial layer, the supporting layer having one or more supporting layer openings penetrating the supporting layer and joining the epitaxial layer openings; and selectively etching the sacrificial layer to separate the growth substrate from the epitaxial layer.