Patents by Inventor Chi-Hsing Tsai

Chi-Hsing Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11961897
    Abstract: A first fin structure is disposed over a substrate. The first fin structure contains a semiconductor material. A gate dielectric layer is disposed over upper and side surfaces of the first fin structure. A gate electrode layer is formed over the gate dielectric layer. A second fin structure is disposed over the substrate. The second fin structure is physically separated from the first fin structure and contains a ferroelectric material. The second fin structure is electrically coupled to the gate electrode layer.
    Type: Grant
    Filed: January 10, 2022
    Date of Patent: April 16, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chi-Hsing Hsu, Sai-Hooi Yeong, Ching-Wei Tsai, Kuan-Lun Cheng, Chih-Hao Wang, Min Cao
  • Patent number: 11955379
    Abstract: A metal adhesion layer may be formed on a bottom and a sidewall of a trench prior to formation of a metal plug in the trench. A plasma may be used to modify the phase composition of the metal adhesion layer to increase adhesion between the metal adhesion layer and the metal plug. In particular, the plasma may cause a shift or transformation of the phase composition of the metal adhesion layer to cause the metal adhesion layer to be composed of a (111) dominant phase. The (111) dominant phase of the metal adhesion layer increases adhesion between the metal adhesion layer.
    Type: Grant
    Filed: September 15, 2020
    Date of Patent: April 9, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Pei-Wen Wu, Chun-I Tsai, Chi-Cheng Hung, Jyh-Cherng Sheu, Yu-Sheng Wang, Ming-Hsing Tsai
  • Publication number: 20240113119
    Abstract: The present disclosure describes a method for the formation of gate-all-around nano-sheet FETs with tunable performance. The method includes disposing a first and a second vertical structure with different widths over a substrate, where the first and the second vertical structures have a top portion comprising a multilayer nano-sheet stack with alternating first and second nano-sheet layers. The method also includes disposing a sacrificial gate structure over the top portion of the first and second vertical structures; depositing an isolation layer over the first and second vertical structures so that the isolation layer surrounds a sidewall of the sacrificial gate structure; etching the sacrificial gate structure to expose each multilayer nano-sheet stack from the first and second vertical structures; removing the second nano-sheet layers from each exposed multilayer nano-sheet stack to form suspended first nano-sheet layers; forming a metal gate structure to surround the suspended first nano-sheet layers.
    Type: Application
    Filed: December 1, 2023
    Publication date: April 4, 2024
    Inventors: Tetsu Ohtou, Ching-Wei Tsai, Jiun-Jia Huang, Kuan-Lun Cheng, Chi-Hsing Hsu
  • Patent number: 8329966
    Abstract: Synthetic base oil composition comprising dialkyl aromatic compound with alkyl side chain carbon number from C10 to C28, or preferably C11 to C24, or even more preferably, C12 to C18, wherein the branching characteristics of the alkyl side chain has a total methyl number (TMN) determined by C13 NMR spectroscopy to be from more than 2.1 to less than 3.5, or preferably from 2.15 to 3.25, or even more preferably from 2.2 to 3.0, or a branching index (BI) from more than 0.1 to less than 1.5, or more preferably, 0.15 to 1.25, or even more preferably, 0.2 to 1.0. The synthetic base oil composition has a combination of high viscometric index, low volatility, superior low temperature properties, and improved thermal/oxidation stability, and is particularly suitable to be used as a premium synthetic base stock, second base oil component, or additive for lubricant and additive package applications.
    Type: Grant
    Filed: October 10, 2007
    Date of Patent: December 11, 2012
    Assignee: Formosan Union Chemical Corp.
    Inventors: Chi-Hsing Tsai, Chien-Hsun Tsai
  • Patent number: 8206683
    Abstract: A method for synthesizing the all-silica zeolite beta with small crystal size is disclosed. This method comprises the steps of: (a) forming a reaction mixture comprising (1) a source of silicon dioxide (SiO2), (2) a source of fluoride ions (F?), (3) a source of tetraethylammonium cations (TEA+), and (4) water (H2O), at predetermined mole ratios of the source of silicon dioxide, the source of fluoride ions, the source of tetraethylammonium cations, and water; (b) crystallizing the reaction mixture; and (c) recovering the crystalline material formed, wherein the pH of the mixture before crystallization has a value of 6 to 9, and the pH of the mixture after crystallization has a value of 6 to 8. This improved method gives a fast and efficient way of synthesis of all-silica zeolite beta with an average crystal size of less than 5 ?m.
    Type: Grant
    Filed: June 11, 2009
    Date of Patent: June 26, 2012
    Assignee: Formosan Union Chemical Corp.
    Inventors: Yu-Yuan Wang, Chien-Hsun Tsai, Chi-Hsing Tsai
  • Publication number: 20100254894
    Abstract: A method for synthesizing the all-silica zeolite beta with small crystal size is disclosed. This method comprises the steps of: (a) forming a reaction mixture comprising (1) a source of silicon dioxide (SiO2), (2) a source of fluoride ions (F?), (3) a source of tetraethylammonium cations (TEA+), and (4) water (H2O), at predetermined mole ratios of the source of silicon dioxide, the source of fluoride ions, the source of tetraethylammonium cations, and water; (b) crystallizing the reaction mixture; and (c) recovering the crystalline material formed, wherein the pH of the mixture before crystallization has a value of 6 to 9, and the pH of the mixture after crystallization has a value of 6 to 8. This improved method gives a fast and efficient way of synthesis of all-silica zeolite beta with an average crystal size of less than 5 ?m.
    Type: Application
    Filed: June 11, 2009
    Publication date: October 7, 2010
    Inventors: Yu-Yuan Wang, Chien-Hsun Tsai, Chi-Hsing Tsai
  • Publication number: 20080103071
    Abstract: Synthetic base oil composition comprising dialkyl aromatic compound with alkyl side chain carbon number from C10 to C28, or preferably C11 to C24, or even more preferably, C12 to C18, wherein the branching characteristics of the alkyl side chain has a total methyl number (TMN) determined by C13 NMR spectroscopy to be from more than 2.1 to less than 3.5, or preferably from 2.15 to 3.25, or even more preferably from 2.2 to 3.0, or a branching index (BI) from more than 0.1 to less than 1.5, or more preferably, 0.15 to 1.25, or even more preferably, 0.2 to 1.0. The synthetic base oil composition has a combination of high viscometric index, low volatility, superior low temperature properties, and improved thermal/oxidation stability, and is particularly suitable to be used as a premium synthetic base stock, second base oil component, or additive for lubricant and additive package applications.
    Type: Application
    Filed: October 10, 2007
    Publication date: May 1, 2008
    Applicant: FORMOSAN UNION CHEMICAL CORP.
    Inventors: Chi-Hsing Tsai, Chien-Hsun Tsai
  • Patent number: 5830345
    Abstract: A process for producing a debenzeneated gasoline blending stock from a benzene-containing refinery stream by using a dual function catalyst. The benzene-containing refinery stream contains at least 2 wt % of benzene is hydrogenated to cyclohexane and then isomerized to methylcyclopentane accompanied with C.sub.5 -C.sub.7 normal paraffins isomerized to isoparaffins, preferably in a single reactor or catalytic distillation reactor using dual function catalyst.
    Type: Grant
    Filed: February 28, 1996
    Date of Patent: November 3, 1998
    Assignee: Chinese Petroleum Corporation
    Inventors: Chung-Hur Lee, Chi-Hsing Tsai, Jingly Fung