Abstract: A first fin structure is disposed over a substrate. The first fin structure contains a semiconductor material. A gate dielectric layer is disposed over upper and side surfaces of the first fin structure. A gate electrode layer is formed over the gate dielectric layer. A second fin structure is disposed over the substrate. The second fin structure is physically separated from the first fin structure and contains a ferroelectric material. The second fin structure is electrically coupled to the gate electrode layer.

Abstract: A metal adhesion layer may be formed on a bottom and a sidewall of a trench prior to formation of a metal plug in the trench. A plasma may be used to modify the phase composition of the metal adhesion layer to increase adhesion between the metal adhesion layer and the metal plug. In particular, the plasma may cause a shift or transformation of the phase composition of the metal adhesion layer to cause the metal adhesion layer to be composed of a (111) dominant phase. The (111) dominant phase of the metal adhesion layer increases adhesion between the metal adhesion layer.

Abstract: A method of forming an IC structure includes forming first and second power rails at a power rail level. First metal segments are formed at a first metal level above the power rail level. Each first metal segment of the plurality of first metal segments overlap one or both of the first power rail or the second power rail. First vias are formed between the power rail level and the first metal level. Second metal segments are formed at a second metal level above the first metal level. At least one second metal segment of the plurality of second metal segments overlaps the first power rail. At least one second metal segment of the plurality of second metal segments overlaps the second power rail. A plurality of second vias are formed between the first metal level and the second metal level.

Abstract: A method implemented by a status-monitoring device connected between a storage device and a corresponding output unit includes: a) determining presence of a storage device according to a first packet from the storage device; b) when it is determined that the storage device is present, generating a pulse signal according to a second packet from the storage device; c) generating a driving signal indicating a status associated with the storage device according to at least a logic level of the pulse signal; and d) sending the driving signal to the output unit for driving the output unit to output an output signal indicating the status.

Abstract: A method implemented by a status-monitoring device connected between a storage device and a corresponding output unit includes: a) determining presence of a storage device according to a first packet from the storage device; b) when it is determined that the storage device is present, generating a pulse signal according to a second packet from the storage device; c) generating a driving signal indicating a status associated with the storage device according to at least a logic level of the pulse signal; and d) sending the driving signal to the output unit for driving the output unit to output an output signal indicating the status.