Abstract: A method of forming an IC structure includes forming first and second power rails at a power rail level. First metal segments are formed at a first metal level above the power rail level. Each first metal segment of the plurality of first metal segments overlap one or both of the first power rail or the second power rail. First vias are formed between the power rail level and the first metal level. Second metal segments are formed at a second metal level above the first metal level. At least one second metal segment of the plurality of second metal segments overlaps the first power rail. At least one second metal segment of the plurality of second metal segments overlaps the second power rail. A plurality of second vias are formed between the first metal level and the second metal level.

Abstract: A waste roll web product processing system includes a first roller conveyor, a push bar conveyor, a second roller conveyor, a guide device and a cutter. The push bar conveyor pushes waste roll web products from the first roller conveyor to the second roller conveyor for enabling the second roller conveyor to deliver the waste roll web products to the guide device so that the waste roll web products fall downwards along the guide device one after another and the cutter cuts off each falling waste roll web product for enabling the web material and shaft of each waste roll web product to be separately recycled.

Abstract: A waste roll web product processing system includes a first roller conveyor, a push bar conveyor, a second roller conveyor, a guide device and a cutter. The push bar conveyor pushes waste roll web products from the first roller conveyor to the second roller conveyor for enabling the second roller conveyor to deliver the waste roll web products to the guide device so that the waste roll web products fall downwards along the guide device one after another and the cutter cuts off each falling waste roll web product for enabling the web material and shaft of each waste roll web product to be separately recycled.

Abstract: Within a method for fabricating a capacitor structure within a microelectronic fabrication there is formed a capacitor structure comprising a pair of capacitor plate layers separated by a capacitor dielectric layer. Within the method, at least one of the pair of capacitor plates is formed of a doped amorphous silicon material formed incident to isotropic etching within an etchant solution comprising aqueous ammonium hydroxide, without hydrogen peroxide.

Abstract: Within a method for fabricating a capacitor structure within a microelectronic fabrication there is formed a capacitor structure comprising a pair of capacitor plate layers separated by a capacitor dielectric layer. Within the method, at least one of the pair of capacitor plates is formed of a doped amorphous silicon material formed incident to isotropic etching within an etchant solution comprising aqueous ammonium hydroxide, without hydrogen peroxide.

Abstract: Within a method for fabricating a microelectronic fabrication, and the microelectronic fabrication fabricated employing the method, there is formed over a substrate a first capacitor structure comprising a pair of first capacitor plate layers and a second capacitor structure comprising a pair of second capacitor plate layers. Within the method and the resulting microelectronic fabrication, the pair of first capacitor plate layers within the first capacitor structure is electrically isolated, at least in part vertically separated and at least in part horizontally overlapped with respect to the pair of second capacitor plate layers within the second capacitor structure. The method provides the resulting microelectronic fabrication with enhanced and performance.

Abstract: Within a method for fabricating a capacitor structure within a microelectronic fabrication there is formed a capacitor structure comprising a pair of capacitor plate layers separated by a capacitor dielectric layer. Within the method, at least one of the pair of capacitor plates is formed of a doped amorphous silicon material formed incident to isotropic etching within an etchant solution comprising aqueous ammonium hydroxide, without hydrogen peroxide.