Abstract: A method according to the present disclosure includes forming a fin-shaped structure protruding from a substrate, forming a gate structure intersecting the fin-shaped structure, forming a gate spacer on a sidewall of the gate structure, and forming a conductive feature above the fin-shaped structure. The gate spacer is laterally between the gate structure and the conductive feature. The method also includes depositing a dielectric layer over the gate structure and the conductive feature, performing an etching process, thereby forming an opening through the dielectric layer and exposing top surfaces of the conductive feature and the gate structure, recessing the gate spacers through the opening, thereby exposing the sidewall of the gate structure, and forming a contact feature in the opening, wherein the contact feature is in contact with the conductive feature and has a bottom portion protruding downward to be in contact with the sidewall of the gate structure.

Abstract: A wavelength division multiplexing module adapted to combine a plurality of light beams to a mixed light beam is provided. The wavelength division multiplexing module includes a housing, a plurality of light emitting elements, an optical division element, and a plurality of reflectors. The light emitting elements are adapted to provide light beams. The optical division element is disposed on a transmission path of the light beams. The reflectors are disposed on the transmission path of the light beams. The optical division element has a reflection region and a light transmission region on one side opposite to the light emitting elements. The reflection region is adapted to reflect a portion of the light beams, and the light transmission region is adapted to allow the mixed light beam to pass through. At least two of the light emitting elements are arranged in an extending direction of the housing.

Abstract: A wavelength division multiplexing module adapted to combine a plurality of light beams to a mixed light beam is provided. The wavelength division multiplexing module includes a housing, a plurality of light emitting elements, an optical division element, and a plurality of reflectors. The light emitting elements are adapted to provide light beams. The optical division element is disposed on a transmission path of the light beams. The reflectors are disposed on the transmission path of the light beams. The optical division element has a reflection region and a light transmission region on one side opposite to the light emitting elements. The reflection region is adapted to reflect a portion of the light beams, and the light transmission region is adapted to allow the mixed light beam to pass through. At least two of the light emitting elements are arranged in an extending direction of the housing.

Abstract: An optical dichroic element adapted to combine first and second light beams into a mixed light beam is provided. The optical dichroic element includes a transparent element, a first reflector and a second reflector. The transparent element is adapted to let the first light beam and the second light beam pass through. The first reflector is disposed on the transparent element. The second reflector is disposed on the transparent element. The first reflector is adapted to reflect the first light beam to the second reflector. The second reflector is adapted to reflect the first light beam and let the second light beam pass through. The first reflector and the second reflector are opposite and not parallel to each other on the transparent element, and an included angle is provided between the first reflector and the second reflector. Moreover, an optical dichroic module including the optical dichroic element is also provided.

Abstract: An optical module adapted to combine a first and a second light beam into a mixed light beam is provided. The optical module includes a base, an optoelectronic element and an optical dichroic element. The base has an accommodating space. The optoelectronic element is adapted in the accommodating space. The optical dichroic element is adapted on the base. The optical dichroic element includes a transparent element, a first reflector and a second reflector. The transparent element is adapted to let the first light beam and the second light beam pass through. The first and second reflector are disposed on the transparent element. The first reflector is adapted to reflect the first light beam to the second reflector. The second reflector is adapted to reflect the first light beam and let the second light beam pass through. The first and the second reflector are opposite and not parallel to each other on the transparent element, and there is an angle between the first and the second reflector.

Abstract: A package carrier suitable for carrying at least one light emitting device and at least one light receiving device includes a carrier substrate and a metal sheet. The carrier substrate includes a first carrying area and a second carrying area. The light emitting device is disposed in the first carrying area and the light receiving device is disposed in the second carrying area. The metal sheet is disposed in the carrier substrate and located between the first carrying area and the second carrier area, for blocking optical signal transmission between the light emitting device and the light receiving device.

Abstract: A package carrier suitable for carrying at least one light emitting device and at least one light receiving device includes a carrier substrate and a metal sheet. The carrier substrate includes a first carrying area and a second carrying area. The light emitting device is disposed in the first carrying area and the light receiving device is disposed in the second carrying area. The metal sheet is disposed in the carrier substrate and located between the first carrying area and the second carrier area, for blocking optical signal transmission between the light emitting device and the light receiving device.

Abstract: A coaxial cable connector consists of a case, an insulator, a first conducting pin and a second conducting pin. The case includes an accommodating room. The insulator is installed in the accommodating room, including a chamber, two plugging grooves cut at two sides of and communicating with the chamber, a guiding rail in the chamber, a guiding groove cut in the guiding rail, and a plugging hole bored at its one end to communicate with the guiding groove. The plugging grooves are respectively inserted with the first and the second conducting pin. The first conducting pin has a pair of connecting pins formed vertically to face each other at its one end. The second conducting pin has its one end bent to form a contact portion.

Abstract: A problem associated with field emission displays is that of `smearing` where an otherwise sharp image appears to be surrounded by a diffuse halo of light. Our investigations have suggested that this is due to spurious reflections from the surface of the gate electrode layer. To eliminate these we have deposited an anti-reflection coating on the top surface of the gate electrode layer. This prevents the reflection of light rays travelling away from the phosphor layer towards the cathode. Such rays, if their reflection were allowed, would emerge at a different spot in the display from what was intended, resulting in a false image. A method for manufacturing a field emission display based on this approach is also described.

Abstract: A process for forming self-aligned focus electrodes in an FED display is described. The process begins by forming cathode columns and gate lines in the normal way, care being taken to ensure that at the intersections between these two sets of lines (where the emitter cavities will reside) the material comprising the cathode columns is transparent to light that will expose photoresist. To this end, ITO is used with an overlay of amorphous silicon in areas well away from the intersections. With cathode and gate lines in place, a second dielectric layer is deposited and material for the focus electrodes is laid down, said material also being transparent as well as conductive, a preferred choice being ITO. Photoresist is then laid down over the upper ITO layer but, in a departure from normal practice, it is exposed to light coming from the bottom of the substrate.

Abstract: A problem associated with field emission displays is that of `smearing` where an otherwise sharp image appears to be surrounded by a diffuse halo of light. Our investigations have suggested that this is due to spurious reflections from the surface of the gate electrode layer. To eliminate these we have deposited an anti-reflection coating on the top surface of the gate electrode layer. This prevents the reflection of light rays travelling away from the phosphor layer towards the cathode. Such rays, if their reflection were allowed, would emerge at a different spot in the display from what was intended, resulting in a false image. A method for manufacturing a field emission display based on this approach is also described.

Abstract: With a view to reducing the gate voltage in Field Emission Devices, three different methods for reducing the diameter of the gate opening in such devices are described. In the first method, metal is deposited on the gate electrode (which is made of polysilicon or amorphous silicon) at an oblique angle of incidence so that the vertical wall of the opening is coated, but not its lower surface. In the second method, all exposed surfaces are coated with metal. For both methods, metal is then removed from all non-polysilicon surfaces through a silicidation step followed by selective etching. In the third method, the gate electrode is selectively coated with a layer of tungsten. In all cases, a uniform reduction of the gate opening is achieved.

Abstract: It has been found that deposition temperature for materials such as cadmium mercury telluride is significantly lowered by precracking selected precursor materials. For example, if organometallic compounds such as diethylmercury and diethyltellurium are decomposed before introduction in the deposition vapor, epitaxial layer formation is possible at 250.degree. C.