Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate and a first gate electrode disposed on the substrate and located in a first region of the semiconductor device. The semiconductor device also includes a first sidewall structure covering the first gate electrode. The semiconductor device further includes a protective layer disposed between the first gate electrode and the first sidewall structure. In addition, the semiconductor device includes a second gate electrode disposed on the substrate and located in a second region of the semiconductor device. The semiconductor device also includes a second sidewall structure covering a lateral surface of the second gate electrode.

Abstract: The present disclosure provides compounds of Formulas (I), (II), and pharmaceutically acceptable salts thereof. The compounds described herein are useful in treating proliferative diseases, for example, cancer (e.g., lung cancer), and infectious diseases (e.g., bacterial infections).

Abstract: A method for fabricating infrared sensors is disclosed. a chalcogenide layer is initially deposited on a substrate. A group of vias is then formed within the chalcogenide layer. After the vias have been converted to a group of studs, a vanadium oxide layer is deposited on the chalcogenide layer covering the studs. Next, the vanadium oxide layer is separated into multiple vanadium oxide membranes. After the chalcogenide layer has been removed, each of the vanadium oxide membranes is allowed to be freestanding while only supported by a corresponding one of the studs. The vanadium oxide membranes will be used as infrared sensors.

Abstract: A method for fabricating a metal-insulator-metal capacitor (MIMCap) is disclosed. A first metal layer is provided on top of an oxide layer. A nitride layer is then deposited on the first metal layer. The nitride layer and the first metal layer are etched to form a MIMCap metal layer. The gaps among the MIMCap metal layer are filled with a plasma oxide, and the excess plasma oxide is polished using the nitride layer a polish stop. After removing the nitride layer, a dielectric layer and a second metal layer are deposited on the MIMCap metal layer. Finally, the dielectric layer and the second metal layer are etched to form a set of MIMCap structures.

Abstract: A method for fabricating a metal-insulator-metal capacitor (MIMCap) is disclosed. A first metal layer is provided on top of an oxide layer. A nitride layer is then deposited on the first metal layer. The nitride layer and the first metal layer are etched to form a MIMCap metal layer. The gaps among the MIMCap metal layer are filled with a plasma oxide, and the excess plasma oxide is polished using the nitride layer a polish stop. After removing the nitride layer, a dielectric layer and a second metal layer are deposited on the MIMCap metal layer. Finally, the dielectric layer and the second metal layer are etched to form a set of MIMCap structures.

Abstract: A detachable fastening element to fasten a panel on a front side of a display panel includes a pressing portion, a locating plate, two elastic pressing members, and two hooks. The pressing portion presses the panel on the front side of the display panel. The display panel is mounted onto a bracing seat. The locating plate is coupled with the pressing portion. The elastic pressing members and the hooks are located on the locating plate. Through the elastic pressing members, hooks and locating plate, the fastening element is clipped the bracing seat. Thereby the panel is fastened on the front side of the display panel. The elasticity provided from the elastic pressing members and hooks make installation and removing of the fastening element easier.

Abstract: The present invention discloses a panel holder, which comprises a chassis. The chassis further comprises a frame. At least one first connection portion and at least one second connection portion are formed on two pairs of opposite laterals of the frame. First fixing members are installed in the laterals of the frame via the first connection portions, and a first type panel can be fixed to the chassis via the first fixing members. Alternatively, second fixing members are installed in the laterals of the frame via the second connection portions, and then, a second type panel can be fixed to the second fixing members. Therefore, in the present invention, an identical chassis can accommodate different types of panels.

Abstract: A detachable fastening element to fasten a panel on a front side of a display panel includes a pressing portion, a locating plate, two elastic pressing members, and two hooks. The pressing portion presses the panel on the front side of the display panel. The display panel is mounted onto a bracing seat. The locating plate is coupled with the pressing portion. The elastic pressing members and the hooks are located on the locating plate. Through the elastic pressing members, hooks and locating plate, the fastening element is clipped the bracing seat. Thereby the panel is fastened on the front side of the display panel. The elasticity provided from the elastic pressing members and hooks make installation and removing of the fastening element easier.

Abstract: A metal interconnect layer that fills in a via hole formed by first depositing a first Al--Cu film on the sidewalls of the via hole at a low temperature and a low sputtering power and then depositing a second Al--Cu film on the first Al--Cu film at a high temperature and high sputtering power. Sputtering is performed in two steps at low and high temperatures within the same sputtering chamber. The deposition at low temperature and low sputtering power provides good coverage in the via hole, and the deposition at high temperature and high sputtering power reduces the process time.

Abstract: Contact holes through a dielectric are formed by forming a layer of polysilicon having a thickness between 0.02 um and 0.15 um inclusive on the dielectric, forming a layer of resist having a thickness between 0.4 um and 0.6 um inclusive on the layer of polysilicon, making a mask of the layer of resist, using it to form a mask in the layer of polysilicon and etching contact holes in the dielectric by exposing it to etching gasses through the apertures in the polysilicon mask. When the dielectric includes a layer of oxide adjacent the polysilicon mask and a layer of nitride between it and elements of the device, the resist mask is removed prior to etching the contact hole and a gas mixture of: C.sub.4 F.sub.8 ; one of Ar, H, F; CO; CF.sub.4 or C.sub.2 F.sub.6 is used.

Abstract: RIE of metallization is achieved at low power and low pressure using Cl.sub.2 and HCl as reactant species by creating a transformer coupled plasma with power applied to electrodes positioned both above and below a substrate with metallization thereon to be etched. Three layer metallizations which include bulk aluminum or aluminum alloy sandwiched between barrier layers made from, for example, Ti/TiN, are etched in a three step process wherein relatively lower quantities of Cl.sub.2 are used in the plasma during etching of the barrier layers and relatively higher quantities of Cl.sub.2 are used during etching of the bulk aluminum or aluminum alloy layer. The ratio of etchants Cl.sub.2 and HCl and an inert gas, such as N.sub.2 are controlled in a manner such that a very thin side wall layer (10-100 .ANG.) of reaction byproducts created during RIE are deposited on the side walls of trenches formed in the metallization during etching.

Abstract: A metallization structure is fabricated by depositing an underlayer of a group IVA metal having a thickness of about 90 to about 110 angstroms, and depositing a layer of aluminum and/or an aluminum alloy. The metallization structure obtained exhibits enhanced electromigration and is highly textured and is especially suitable for forming electrical connections or wiring.

Abstract: A water filter having a strainer mounted on the inside for straining water, and a reciprocating device controlled by a pressure differential controller to reciprocate a disk-like scraper in the strainer, causing it to scrape out dirt from the strainer, the disk-like scraper having a center water hole and a check valve mounted in the center water hole for permitting water to flow downwards in the strainer through the center water hole and stopping water from flowing upwards in the strainer through the center water hole.