Abstract: A method of fabricating a semiconductor device includes forming a gate structure, a first edge structure and a second edge structure on a semiconductor strip. The method further includes forming a first source/drain feature between the gate structure and the first edge structure. The method further includes forming a second source/drain feature between the gate structure and the second edge structure, wherein a distance between the gate structure and the first source/drain feature is different from a distance between the gate structure and the second source/drain feature. The method further includes implanting a buried channel in the semiconductor strip, wherein the buried channel is entirely below a top-most surface of the semiconductor strip, a maximum depth of the buried channel is less than a maximum depth of the first source/drain feature, and a dopant concentration of the buried channel is highest under the gate structure.

Abstract: A semiconductor structure includes a first gate structure, a second gate structure coupled to the first gate structure, a source region, a first drain region, and a second drain region. The source region is surrounded by the first gate structure and the second gate structure. The first drain region is separated from the source region by the first gate structure. The second drain region is separated from the source region by the second gat structure. A shape of the first drain region and a shape of the second drain region are different from each other from a plan view.

Abstract: The invention has a display device and a control method for generating anions, having a dust-proof net in front of an enclosure. A fan in the enclosure drives an air flow toward the dust-proof net facing the front of the display device. The anion generator is placed in the air flow to disperse anions through the dust-proof net. At least one speaker fixed by the side of the fan diffuses anions by its vibration wave. An anion sensor is placed on the dust-proof net to detect anion concentration for controlling anion quantity. Those positive ions and harmful particles around the user can be cleared instantly.