Abstract: A method includes receiving a device design layout and a scribe line design layout surrounding the device design layout. The device design layout and the scribe line design layout are rotated in different directions. An optical proximity correction (OPC) process is performed on the rotated device design layout and the rotated scribe line design layout. A reticle includes the device design layout and the scribe line design layout is formed after performing the OPC process.

Abstract: The present disclosure provides an interconnect structure and a method for forming an interconnect structure. The method for forming an interconnect structure includes forming a bottom metal line in a first interlayer dielectric layer, forming a second interlayer dielectric layer over the bottom metal line, exposing a top surface of the bottom metal line, increasing a total surface area of the exposed top surface of the bottom metal line, forming a conductive via over the bottom metal line, and forming a top metal line over the conductive via.

Abstract: The present disclosure provides an interconnect structure and a method for forming an interconnect structure. The method for forming an interconnect structure includes forming a bottom metal line in a first interlayer dielectric layer, forming a second interlayer dielectric layer over the bottom metal line, exposing a top surface of the bottom metal line, increasing a total surface area of the exposed top surface of the bottom metal line, forming a conductive via over the bottom metal line, and forming a top metal line over the conductive via.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a fin structure over a semiconductor substrate and forming a gate stack over the fin structure. The method also includes forming an epitaxial structure over the fin structure, and the epitaxial structure is adjacent to the gate stack. The method further includes forming a dielectric layer over the epitaxial structure and forming an opening in the dielectric layer to expose the epitaxial structure. In addition, the method includes applying a metal-containing material on the epitaxial structure while the epitaxial structure is heated so that a portion of the epitaxial structure is transformed to form a metal-semiconductor compound region.

Abstract: The present disclosure provides an interconnect structure, including a first interlayer dielectric layer, a bottom metal line including a first metal in the first interlayer dielectric layer, a conductive via including a second metal over the bottom metal line, wherein the second metal is different from the first metal, and the first metal has a first type of primary crystalline structure, and the second metal has the first type of primary crystalline structure, a total area of a bottom surface of the conductive via is greater than a total cross sectional area of the conductive via, and a top metal line over the conductive via, wherein the top metal line comprises a third metal different from the second metal.

Abstract: The present disclosure provides an interconnect structure, including a first interlayer dielectric layer, a bottom metal line including a first metal in the first interlayer dielectric layer, a conductive via including a second metal over the bottom metal line, wherein the second metal is different from the first metal, and the first metal has a first type of primary crystalline structure, and the second metal has the first type of primary crystalline structure, a total area of a bottom surface of the conductive via is greater than a total cross sectional area of the conductive via, and a top metal line over the conductive via, wherein the top metal line comprises a third metal different from the second metal.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a fin structure over a semiconductor substrate and forming a gate stack over the fin structure. The method also includes forming an epitaxial structure over the fin structure, and the epitaxial structure is adjacent to the gate stack. The method further includes forming a dielectric layer over the epitaxial structure and forming an opening in the dielectric layer to expose the epitaxial structure. In addition, the method includes applying a metal-containing material on the epitaxial structure while the epitaxial structure is heated so that a portion of the epitaxial structure is transformed to form a metal-semiconductor compound region.

Abstract: A heat dissipation module including heat pipes. The heat dissipation module includes a seat with grooves, heat pipes and two fin assemblies. The heat pipes are secured in the grooves at a first end and extend at the second end thereof. A first fin assembly with parallel first fins is soldered to the seat, covering the grooves and heat pipes. A second fin assembly with parallel second fins is secured to the cantilevered end of the heat pipes.