Abstract: A semiconductor device includes a single diffusion break (SDB) structure dividing a fin-shaped structure into a first portion and a second portion, an isolation structure on the SDB structure, a first spacer adjacent to the isolation structure, a metal gate adjacent to the isolation structure, a shallow trench isolation (STI around the fin-shaped structure, and a second isolation structure on the STI. Preferably, a top surface of the first spacer is lower than a top surface of the isolation structure and a bottom surface of the first spacer is lower than a bottom surface of the metal gate.

Abstract: A computing device including a method of adding to a directory information tree involving the steps of accessing a template name, reading a template according to the accessed template name, the template including structural information of the directory information tree, receiving a first set of attributes from an application program, the received first set of attributes not including a location within the directory information tree, constructing an entry including the received first set of attributes, and a destination location within the directory information, the destination location generated using the structural information, and adding the constructed entry to the directory information tree at the destination location.

Abstract: A method providing an application computer program to be written independently of the structure of a directory information tree. The application program makes calls to an innovative API, the API accessing the structure of the directory information tree in an innovative template. If the structure of the directory information tree is changed, the template is changed, but the application is not changed.