Abstract: The present disclosure relates to a heat-not-burn (HNB) aerosol-generating article, which comprises aerosol-generating raw material, aerosol-generating agent, and water. The aerosol-generating raw material is pre-pulverized and then sieved through a 40-200 mesh sieve. The aerosol-generating raw material, the aerosol-generating agent, and water are mixed in a certain proportion and blended into paste, so that the HNB aerosol-generating article is in a shape of paste stick when extruded, and is used to be injected into the HNB cartridge tube by extrusion into the paste stick. The paste stick HNB aerosol-generating article has internal pores in a form of loose paste stick. When the user performs a suction action, the pores are convenient for the aerosol passing through the paste stick HNB aerosol-generating article into the human mouth smoothly. The above-mentioned HNB aerosol-generating article is suitable for HNB non-tobacco products or HNB tobacco products and the like.

Abstract: Multi-mode charger device for charging portable devices and methods of charging portable devices are described. In an embodiment, a multi-mode charger device has mode blocks respectively associated with modes of operation which are coupled to a switch module. The switch module is for coupling a selected one of the mode blocks to a peripheral bus and to decouple the mode blocks remaining from the peripheral bus. A first mode of the modes of operation is a pass through mode. A second mode of the modes of operation is a first charging mode. A third mode of the modes of operation is a second charging mode. The first charging mode and the second charging mode are different from one another.

Abstract: Multi-mode charger device for charging portable devices and methods of charging portable devices are described. In an embodiment, a multi-mode charger device has mode blocks respectively associated with modes of operation which are coupled to a switch module. The switch module is for coupling a selected one of the mode blocks to a peripheral bus and to decouple the mode blocks remaining from the peripheral bus. A first mode of the modes of operation is a pass through mode. A second mode of the modes of operation is a first charging mode. A third mode of the modes of operation is a second charging mode. The first charging mode and the second charging mode are different from one another.

Abstract: A bus switch chip is limited to operating with a power-supply voltage of 1.8 volts relative to a 0-volt ground. Differential bus signals switched through the bus switch chip swing from 2.7 to 3.3 volts, well above the chip's specified power-supply voltage. The bus switch chip is level-shifted by applying a 1.5-volt signal as the chip's ground, and a 3.3-volt signal as its power supply, so the chip's net power supply is within the specification at 1.8 volts. High-Definition Multimedia Interface (HDMI) and Digital Visual Interface (DVI) require that the differential signals are never driven to ground. However, some non-compliant video transmitters drive differential signals to ground when disabled. External pullup resistors or internal pullup transistors in the bus switch chip are added to the bus signals from non-compliant transmitters to pull disabled signals above the 1.5-volt chip ground to prevent damage from signals below the chip's 1.5-volt ground.

Abstract: A non-volatile memory cell uses a p+ diffusion region spaced a lateral distance from the n+ drain of the n-channel programmable transistor. A diode between this p+ diffusion and the n+ drain has a low breakdown voltage because of the close spacing of the high-doping n+ and p+ diffusions. This diode generates electrons when avalanche breakdown occurs. The avalanche electrons are swept up into the programmable gate during programming. Since the avalanche electrons are generated by the diode rather than by the programmable transistor itself, programming efficiency no longer depends on the channel length and other parameters of the programmable transistor. The breakdown voltage of the diode is adjusted by varying the lateral spacing between the n+ drain and the p+ diffusion. Smaller lateral spacing enter avalanche breakdown at lower voltages and thus program the programmable transistor at a lower drain voltage.

Abstract: A method for producing field oxide in a silicon substrate by forming a thin oxide layer over the surface of the substrate, forming a thin nitride layer over the thin oxide layer, forming a thick oxide over the thin nitride layer, forming a thick nitride layer over the thick oxide layer; patterning all four of the layers to espose the surface of the substrate where the field oxide is to be formed; and growing the field oxide. Preferably, before the field oxide is grown, trenches are formed into the substrate so that the upper surfaces of the field oxide are substantially planar with the upper surfaces of the substrate. The thin oxide layer minimizes bird beak formation, and eases the removal of the oxide/nitride/oxide/nitride layers. The resultant structure is both planar and bird's beak-free, and is therefore well suited to producing VLSI components having dimensions less than 0.5 microns.