Patents by Inventor Chi-Hung Hui

Chi-Hung Hui has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9030155
    Abstract: Multi-mode charger device for charging portable devices and methods of charging portable devices are described. In an embodiment, a multi-mode charger device has mode blocks respectively associated with modes of operation which are coupled to a switch module. The switch module is for coupling a selected one of the mode blocks to a peripheral bus and to decouple the mode blocks remaining from the peripheral bus. A first mode of the modes of operation is a pass through mode. A second mode of the modes of operation is a first charging mode. A third mode of the modes of operation is a second charging mode. The first charging mode and the second charging mode are different from one another.
    Type: Grant
    Filed: July 2, 2012
    Date of Patent: May 12, 2015
    Assignee: Pericom Semiconductor Corporation
    Inventors: Xianxin Li, Hong-Leong Hong, Adbullah Raouf, Anna Tam, John Chi-Hung Hui, Tat C. Choi
  • Patent number: 8237414
    Abstract: Multi-mode charger device for charging portable devices and methods of charging portable devices are described. In an embodiment, a multi-mode charger device has mode blocks respectively associated with modes of operation which are coupled to a switch module. The switch module is for coupling a selected one of the mode blocks to a peripheral bus and to decouple the mode blocks remaining from the peripheral bus. A first mode of the modes of operation is a pass through mode. A second mode of the modes of operation is a first charging mode. A third mode of the modes of operation is a second charging mode. The first charging mode and the second charging mode are different from one another.
    Type: Grant
    Filed: April 15, 2009
    Date of Patent: August 7, 2012
    Assignee: Pericom Semiconductor Corporation
    Inventors: Xianxin Li, Hong-Leong Hong, Adbullah Raouf, Anna Tam, John Chi-Hung Hui, Tat C. Choi
  • Patent number: 7259589
    Abstract: A bus switch chip is limited to operating with a power-supply voltage of 1.8 volts relative to a 0-volt ground. Differential bus signals switched through the bus switch chip swing from 2.7 to 3.3 volts, well above the chip's specified power-supply voltage. The bus switch chip is level-shifted by applying a 1.5-volt signal as the chip's ground, and a 3.3-volt signal as its power supply, so the chip's net power supply is within the specification at 1.8 volts. High-Definition Multimedia Interface (HDMI) and Digital Visual Interface (DVI) require that the differential signals are never driven to ground. However, some non-compliant video transmitters drive differential signals to ground when disabled. External pullup resistors or internal pullup transistors in the bus switch chip are added to the bus signals from non-compliant transmitters to pull disabled signals above the 1.5-volt chip ground to prevent damage from signals below the chip's 1.5-volt ground.
    Type: Grant
    Filed: September 16, 2005
    Date of Patent: August 21, 2007
    Assignee: Pericom Semiconductor Corp.
    Inventors: Chi-Hung Hui, Xianxin Li
  • Patent number: 5719427
    Abstract: A non-volatile memory cell uses a p+ diffusion region spaced a lateral distance from the n+ drain of the n-channel programmable transistor. A diode between this p+ diffusion and the n+ drain has a low breakdown voltage because of the close spacing of the high-doping n+ and p+ diffusions. This diode generates electrons when avalanche breakdown occurs. The avalanche electrons are swept up into the programmable gate during programming. Since the avalanche electrons are generated by the diode rather than by the programmable transistor itself, programming efficiency no longer depends on the channel length and other parameters of the programmable transistor. The breakdown voltage of the diode is adjusted by varying the lateral spacing between the n+ drain and the p+ diffusion. Smaller lateral spacing enter avalanche breakdown at lower voltages and thus program the programmable transistor at a lower drain voltage.
    Type: Grant
    Filed: January 14, 1997
    Date of Patent: February 17, 1998
    Assignee: Pericom Semiconductor Corp.
    Inventors: Paul C. F. Tong, Chi-Hung Hui
  • Patent number: 4746630
    Abstract: A method for producing field oxide in a silicon substrate by forming a thin oxide layer over the surface of the substrate, forming a thin nitride layer over the thin oxide layer, forming a thick oxide over the thin nitride layer, forming a thick nitride layer over the thick oxide layer; patterning all four of the layers to espose the surface of the substrate where the field oxide is to be formed; and growing the field oxide. Preferably, before the field oxide is grown, trenches are formed into the substrate so that the upper surfaces of the field oxide are substantially planar with the upper surfaces of the substrate. The thin oxide layer minimizes bird beak formation, and eases the removal of the oxide/nitride/oxide/nitride layers. The resultant structure is both planar and bird's beak-free, and is therefore well suited to producing VLSI components having dimensions less than 0.5 microns.
    Type: Grant
    Filed: September 17, 1986
    Date of Patent: May 24, 1988
    Assignee: Hewlett-Packard Company
    Inventors: Chi-Hung Hui, Paul V. Voorde, John L. Moll