Abstract: A communicating system suitable for a repeater and communicating method thereof are described. The communicating system comprises a receiving unit, a delay module, a transmitting unit and a control unit. The receiving unit transmits a first signal based on a KB/MS input signal. The delay module is coupled to the receiving unit and delays the first signal from the receiving unit in order to generate a second signal. The second signal has a first phase difference in comparison with the first signal. The transmitting unit is coupled to the delay module and the control unit. The transmitting unit transmits a KB/MS output signal based on the second signal while the control unit controls the transmitting unit via a control signal.

Abstract: An optical film includes a substrate and at least one pyramid-like structure. The pyramid-like structure is disposed on one surface of the substrate and has a base, a first face, a second face and a third face. The first, second and third faces are connected together and disposed along the base.

Abstract: A light-emitting diode (LED) device includes a substrate, at least one LED element and an optical modulation structure. The LED element is disposed on the substrate and generates a light beam. The optical modulation structure is disposed at one side of the LED element for adjusting a shape of an optical field of the light beam and an intensity distribution of the optical field. The optical modulation structure is formed with a plurality of stepped protrusions.

Abstract: A light-emitting diode (LED) package includes a thermal-conducting substrate, a LED element, a package body, and an optical modulation device. The LED element is formed on the thermal-conducting substrate. The package body is formed on the LED element and the thermal-conducting substrate, and the optical modulation device is disposed on a light outputting surface of the package body and has a plurality of stepped protrusions for adjusting a shape of an optical field of the light beam. The optical modulation device and the package body can be two separate components and be connected together, or the optical modulation device and the package body can be integrally formed as a single piece when they are made. In addition, a manufacturing method of the LED package is also disclosed.

Abstract: A communicating system suitable for a repeater and communicating method thereof are described. The communicating system comprises a receiving unit, a delay module, a transmitting unit and a control unit. The receiving unit transmits a first signal based on a KB/MS input signal. The delay module is coupled to the receiving unit and delays the first signal from the receiving unit in order to generate a second signal. The second signal has a first phase difference in comparison with the first signal. The transmitting unit is coupled to the delay module and the control unit. The transmitting unit transmits a KB/MS output signal based on the second signal while the control unit controls the transmitting unit via a control signal.

Abstract: A linearized bias circuit with adaptation resolves the problem happening to the power amplifier with conventional bias circuit that the DC and AC characteristics of the power amplifier shift or even deteriorate due to a temperature variation. The linearized bias circuit with adaptation has a reference voltage source, a first voltage source, a first resistor, a second resistor, a first NPN transistor, a second NPN transistor, and a third NPN transistor. The present invention has the characteristics of bias current temperature compensation, gain and phase compensations to achieve high linearity for the conventional power amplifier and reducing the DC consumption power. At the same time, the quantity of the required elements and layout area in the present invention are small so that the design complexity can be reduced for improving yield, reducing IC layout area, and reducing cost.

Abstract: A KVM switch has a switching device, a first computer video interface, a second computer video interface, an image processing unit, and at least one console video interface. The switching device is arranged to select a first computing device and a second computing device from the computing devices. The first computer video interface is arranged to receive a first image from the first computing device, and the second computer video interface is arranged to receive a second image from the second computing device. The image processing unit is arranged to compose the first image and the second image to be a synthesized image. The console video interface is arranged to output one of the first image, the second image and the synthesized image to the set of user interface devices.

Abstract: A linearized bias circuit with adaptation resolves the problem happening to the power amplifier with conventional bias circuit that the DC and AC characteristics of the power amplifier shift or even deteriorate due to a temperature variation. The linearized bias circuit with adaptation has a reference voltage source, a first voltage source, a first resistor, a second resistor, a first NPN transistor, a second NPN transistor, and a third NPN transistor. The present invention has the characteristics of bias current temperature compensation, gain and phase compensations to achieve high linearity for the conventional power amplifier and reducing the DC consumption power. At the same time, the quantity of the required elements and layout area in the present invention are small so that the design complexity can be reduced for improving yield, reducing IC layout area, and reducing cost.

Abstract: Within both a lateral double diffused metal oxide semiconductor (LDMOS) device, and a method for fabrication thereof, there is formed a buried layer of polarity equivalent with a well region within which is formed a drain region. The buried layer is formed laterally aligned with respect to the well region, and separated therefrom by a portion of an epitaxial layer. The lateral double diffused metal oxide semiconductor (LDMOS) device exhibits enhanced electrical performance.

Abstract: Within both a lateral double diffused metal oxide semiconductor (LDMOS) device, and a method for fabrication thereof, there is formed a buried layer of polarity equivalent with a well region within which is formed a drain region. The buried layer is formed laterally aligned with respect to the well region, and separated therefrom by a portion of an epitaxial layer. The lateral double diffused metal oxide semiconductor (LDMOS) device exhibits enhanced electrical performance.

Abstract: The present invention discloses a simple and convenient method for fabricating a capacitor device with BiCMOS processes. An electrode of the capacitor device formed according to the present invention is an ion doping region formed in an epitaxy layer so that the thickness of the dielectric layer of the capacitor device decreased relative to a specific ion concentration. Accordingly, the capacitor device formed therein has a high capacitance and good performance.

Abstract: A method of manufacturing a LDHOS transistor having a dielectric block under the gate electrode. A high voltage well, low voltage well (LV PW), and field oxide regions having bird beaks are provided in a substrate and overlay the high voltage well and the low voltage well. In a key step, a dielectric block is formed over the bird beaks of the field oxide regions. A gate is formed over the dielectric block. After this the LDMOS device is completed. The invention's dielectric block covers the bird's beaks of the field oxide regions and enhances the e-field tolerance. The invention's e-field enhancement dielectric block relieves the e-field near the bird's beak, thus increasing the breakdown voltage of the transistor.

Abstract: The present invention discloses a simple and convenient method for fabricating a capacitor device with BiCMOS processes. An electrode of the capacitor device formed according to the present invention is an ion doping region formed in an epitaxy layer so that the thickness of the dielectric layer of the capacitor device decreased relative to a specific ion concentration. Accordingly, the capacitor device formed therein has a high capacitance and good performance.

Abstract: An ATG MOSFET is constructed of a plurality of ATG MOSFET elements each including a gate region. One of a source and drain region of each ATG MOSFET element is shared in common with an adjacent one of the ATG MOSFET elements. The plurality of ATG MOSFET elements are connected in parallel to provide a desired driving current capacity and reduced effective driving capacitance. The ATG MOSFET is implemented in a high frequency RF amplifier.

Abstract: The present invention discloses a simple and convenient method for fabricating a capacitor device with BiCMOS processes. An electrode of the capacitor device formed according to the present invention is an ion doping region formed in an epitaxy layer so that the thickness of the dielectric layer of the capacitor device decreased relative to a specific ion concentration. Accordingly, the capacitor device formed therein has a high capacitance and good performance.

Abstract: A method is used to fully extract coupling coefficients of a flash memory cell by a GIDL manner. The flash memory cell is composed of a substrate, a drain region, source region, a control gate and a floating gate. The method keeps the source voltage Vs and the substrate voltage Vb fixed. The drain voltage Vd and the control gate voltage are varied. Then, measuring a GIDL current obtains a first coefficient ratio of the drain coupling coefficient ad to the gate coupling &agr;cg, that is, &agr;d/&agr;cg. Similarly, keeping the drain voltage Vd and the substrate voltage Vb fixed and varying the source voltage Vs and the control gate voltage Vcg, a second coefficient ratio of the source coupling coefficient &agr;s to the gate coupling coefficient &agr;cg, that is, &agr;s/&agr;cg.