Abstract: A method includes following steps. A target layer is formed over a substrate. A first hard mask layer is formed over the target layer by a plasma generated using a first radio frequency generator and a second radio frequency generator. The first radio frequency generator and the second radio frequency generator have different powers. A second hard mask layer is formed over the first hard mask layer by a plasma generated using the first radio frequency generator without using the second radio frequency generator. A photoresist layer is formed over the second hard mask layer. The photoresist layer is exposed. The photoresist layer is developed. The first hard mask layer and the second hard mask layer are patterned using the photoresist layer as an etch mask. The target layer is patterned using the first hard mask layer and the second hard mask layer as an etch mask.

Abstract: A foldable electronic device includes a first body having an end and a first inclined surface, a second body having a second inclined surface, and a hinge module. The end includes an accommodating area. A virtual shaft line exists between sides of the first inclined surface and the second inclined surface that are closest to each other. The second body rotates relative to the first body through the virtual shaft line. The hinge module includes a first bracket adjacent to the first inclined surface, connected to the first body, and located in the accommodating area, a second bracket adjacent to the second inclined surface and connected to the second body, and a third bracket including a first end and a second end. The first bracket is connected to the first end through a first torsion assembly. The second bracket is connected to the second end through a second torsion assembly.

Abstract: Method of manufacturing semiconductor device includes forming photoresist layer over substrate. Forming photoresist layer includes combining first precursor and second precursor in vapor state to form photoresist material, wherein first precursor is organometallic having formula: MaRbXc, where M at least one of Sn, Bi, Sb, In, Te, Ti, Zr, Hf, V, Co, Mo, W, Al, Ga, Si, Ge, P, As, Y, La, Ce, Lu; R is substituted or unsubstituted alkyl, alkenyl, carboxylate group; X is halide or sulfonate group; and 1?a?2, b?1, c?1, and b+c?5. Second precursor is at least one of an amine, a borane, a phosphine. Forming photoresist layer includes depositing photoresist material over the substrate. The photoresist layer is selectively exposed to actinic radiation to form latent pattern, and the latent pattern is developed by applying developer to selectively exposed photoresist layer to form pattern.

Abstract: A method of manufacturing semiconductor device includes forming a multilayer photoresist structure including a metal-containing photoresist over a substrate. The multilayer photoresist structure includes two or more metal-containing photoresist layers having different physical parameters. The metal-containing photoresist is a reaction product of a first precursor and a second precursor, and each layer of the multilayer photoresist structure is formed using different photoresist layer formation parameters. The different photoresist layer formation parameters are one or more selected from the group consisting of the first precursor, an amount of the first precursor, the second precursor, an amount of the second precursor, a length of time each photoresist layer formation operation, and heating conditions of the photoresist layers.

Abstract: Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a plurality of nanostructures formed over a substrate, and a gate structure formed on the nanostructures. The semiconductor structure includes a source/drain (S/D) structure formed adjacent to the gate structure, and a fin spacer layer adjacent to the S/D structure. The bottom surface of the fin spacer layer is lower than a bottom surface of the S/D structure.

Abstract: A calibration method for emulating a Group III-V semiconductor device, a method for determining trap location within a Group III-V semiconductor device and method for manufacturing a Group III-V semiconductor device are provided. Actual tape-out is performed according to an actual process flow of the Group III-V semiconductor device for manufacturing the Group III-V semiconductor devices and PCM Group III-V semiconductor device. Actual electrical performances of the Group III-V semiconductor devices and the PCM Group III-V semiconductor device are obtained and the actual electrical performances of the Group III-V semiconductor devices and the PCM Group III-V semiconductor device are compared to determine locations where one or more traps appear.

Abstract: A particle prevention method in chamber includes providing a shielding ring, wherein the shielding ring includes a first side wall, a second side wall, and a bottom, the second side wall is parallel to the first side wall, and the bottom is connected to the first side wall, and the second side wall to form an annular groove area; connecting the first side wall to the reaction chamber with the first side wall extending toward an upper portion of a accommodating space of a reaction chamber; fixing a first deflector plate to the first side wall, wherein the first deflector plate extends obliquely toward the bottom, and the first deflector plate is located above the aperture; and fixing a second deflector plate to the second side wall, wherein the second deflector plate is located above the first deflector plate, and the second deflector plate extends obliquely toward the bottom.

Abstract: A gas mixing method to enhance plasma includes: providing a reaction chamber; wherein the reaction chamber includes an accommodating space and the reaction chamber includes a top opening connected to the accommodating space; providing an adapter plate, and fixing the adapter plate to the reaction chamber to be arranged corresponding to the top opening; wherein the adapter plate further includes a window area communicating both sides of the adapter plate; providing a target disposed on top of the adapter plate to seal the top opening; premixing a plasma gas and an auxiliary gas into a gas mixture, and introducing the gas mixture into the accommodating space; and providing a biasing field to the accommodating space.

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate. A first precursor and a second precursor are combined. The first precursor is an organometallic having a formula: MaRbXc, where M is one or more of Sn, Bi, Sb, In, and Te, R is one or more of a C7-C11 aralkyl group, a C3-C10 cycloalkyl group, a C2-C10 alkoxy group, and a C2-C10 alkylamino group, X is one or more of a halogen, a sulfonate group, and an alkylamino group, and 1?a?2, b?1, c?1, and b+c?4, and the second precursor is one or more of water, an amine, a borane, and a phosphine. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern. The latent pattern is developed by applying a developer to the selectively exposed photoresist layer.

Abstract: A gas mixing method to enhance plasma includes: providing a reaction chamber; wherein the reaction chamber includes an accommodating space and the reaction chamber includes a top opening connected to the accommodating space; providing an adapter plate, and fixing the adapter plate to the reaction chamber to be arranged corresponding to the top opening; wherein the adapter plate further includes a window area communicating both sides of the adapter plate; providing a target disposed on top of the adapter plate to seal the top opening; premixing a plasma gas and an auxiliary gas into a gas mixture, and introducing the gas mixture into the accommodating space; and providing a biasing field to the accommodating space.

Abstract: A phosphorus-containing epoxy resin and a method for synthesizing the same are disclosed. The method includes the step of catalytically reacting compound (i) with compound (ii) to synthesize the phosphorus-containing epoxy resin having the structure of compound (I). R is methyl or phenyl, and n is the integer from 1 to 9.

Abstract: A method for deposition of a selenium thin-film includes the following steps. First, a plasma head is provided. Then, a substrate is supported in an atmospheric pressure. Next, a solid-state selenium source is dissociated by the plasma head to deposit the selenium thin-film on the substrate. The plasma head includes a chamber, a housing and the solid-state selenium source. Plasma is produced in the chamber. The chamber is surrounded by the housing. The solid-state selenium source is supported by the housing.

Abstract: A film coating system for coating an object includes a working station and an isolating device. The object is disposed on the working station, and the isolating device is utilized to isolate the object. The isolating device includes a body generating a first power, a first working fluid, a second working fluid, a first guiding portion and a second guiding portion. The first guiding portion guides the first working fluid to pass through the body, thereby forming a first working region to coat the object thereon. The second guiding portion guides the second working fluid excited by the first power of the body to pass through the body, thereby forming a second working region to separate the first working region from the object.

Abstract: A surface treating method for treating a tooth surface and a surface treating device thereof are provided. First, a working gas is filled into a tube. Next, a voltage is provided to the working gas for exciting the working gas into plasma. After that, the plasma is discharged through an opening of the tube for contacting the tooth surface.

Abstract: A plasma system for generating a plasma is generated. The plasma system includes a tube, a positive electrode and a negative electrode. The tube has a plasma jet opening, a first end surface and a second end surface. The plasma jet opening penetrates the wall of the tube. The plasma passes through the plasma jet opening and is emitted to the outside of the tube. The positive electrode has a side surface facing and adjacent to the tube. The negative electrode is separated from the positive electrode by a first predetermined distance. The negative electrode has a negative electrode side surface facing and adjacent to the tube. The first positive electrode and the first negative electrode are disposed between the first end surface and the second end surface, and a portion of the plasma jet opening is disposed between the positive electrode and the negative electrode.

Abstract: A phosphorus-containing epoxy resin and a method for synthesizing the same are disclosed. The method includes the step of catalytically reacting compound (i) with compound (ii) to synthesize the phosphorus-containing epoxy resin having the structure of compound (I). R is methyl or phenyl, and n is the integer from 1 to 9.

Abstract: A plasma system with an injection device is provided. The plasma system comprises a plasma cavity and an injection device. The plasma cavity comprises a first electrode and a second for generating plasma. The injection device comprises a plasma injection tube and at least a reactant injection tube. The plasma injection tube is connected to the plasma cavity. The plasma injection tube comprises an inlet, an outlet and an outer sidewall. The plasma injection tube injects the plasma from the inlet and guides the plasma out through the outlet. The outer sidewall has a width decreasing from the inlet to the outlet. The reactant injection tube is disposed outside of the outer sidewall. The reactant injection tube injects a reactant to the outer sidewall so that the reactant flows along the outer sidewall toward the outlet and mixes with the plasma at the outlet.

Abstract: A plasma system for generating a plasma is generated. The plasma system includes a tube, a positive electrode and a negative electrode. The tube has a plasma jet opening, a first end surface and a second end surface. The plasma jet opening penetrates the wall of the tube. The plasma passes through the plasma jet opening and is emitted to the outside of the tube. The positive electrode has a side surface facing and adjacent to the tube. The negative electrode is separated from the positive electrode by a first predetermined distance. The negative electrode has a negative electrode side surface facing and adjacent to the tube. The first positive electrode and the first negative electrode are disposed between the first end surface and the second end surface, and a portion of the plasma jet opening is disposed between the positive electrode and the negative electrode.

Abstract: A method for fabricating liquid crystal (LC) alignment includes the steps of processing an alignment film having a plurality of liquid crystal molecules with a single or plurality of plasma generating devices, such that the liquid crystal molecules are aligned at a high pretilt angle. Compared with the prior art, the present invention is suitable for modifying the alignment film surface adjustablely in directions and angles, and can attain the effect of alignment stability with a high pretilt angle in a single process, thus overcoming the drawbacks of the prior art.

Abstract: A film coating system for coating an object includes a working station and an isolating device. The object is disposed on the working station, and the isolating device is utilized to isolate the object. The isolating device includes a body generating a first power, a first working fluid, a second working fluid, a first guiding portion and a second guiding portion. The first guiding portion guides the first working fluid to pass through the body, thereby forming a first working region to coat the object thereon. The second guiding portion guides the second working fluid excited by the first power of the body to pass through the body, thereby forming a second working region to separate the first working region from the object.