Abstract: The present invention relates to photoresist monomers, polymers formed therefrom and photoresist compositions suitable for photolithography processes employing a DUV light source, such as KrF (249 nm) and ArF(193 nm); EUV; VUV; E-beam; ion-beam; and X-ray. Photoresist monomers of the present invention are represented by the following Chemical Formula 1: wherein, m is 1 or 2. Polymers of the present invention comprise repeating units derived from the comonomer of Chemical Formula 1, preferably together with monomers of the following Chemical Formula 2: wherein, R* is an acid-labile group, and l is 1 or 2.

Abstract: The present invention relates to photoresist monomers, polymers formed therefrom and photoresist compositions suitable for photolithography processes employing a DUV light source, such as KrF (249 nm) and ArF(193 nm); EUV; VUV; E-beam; ion-beam; and X-ray.

Abstract: Photoresist monomers which can be used to form photoresist polymers and photoresist compositions using the same which are suitable for photolithography processes employing a deep ultraviolet light source and copolymers thereof. Monomers are represented by following Formula 1: wherein, R1, is —OH or —R—OH; R represents substituted or unsubstituted linear or branched (C1-C10) alkylene, substituted or unsubstituted (C1-C10) alkylene comprising an ether linkage, substituted or unsubstituted (C1-C10) alkylene comprising an ester linkage, or substituted or unsubstituted (C1-C10) alkylene comprising an ketone moiety; and 1 is an integer of 1 or 2.

Abstract: The present invention relates to photoresist monomers, polymers formed therefrom and photoresist compositions suitable for photolithography processes employing a DUV light source, such as KrF(249 nm) and ArF(193 nm); EUV; VUV; E-beam; ion-beam; and X-ray. Photoresist monomers of the present invention are represented by the following Chemical Formula 1: wherein, m is 1 or 2. Polymers of the present invention comprise repeating units derived from the comonomer of Chemical Formula 1, preferably together with monomers of the following Chemical Formula 2: wherein, R* is an acid-labile group, and W is 1 or 2.

Abstract: The present invention provides heterobicyclo compounds of the formula: and a method for preparing the same, where Z, X, R1, R2, and m are those defined herein. Compounds of the present invention can be used as monomers for preparing a photoresist resin which is useful, for example, ultra-violet wavelength photolithography processes.

Abstract: The present invention relates to photoresist monomers, polymers formed therefrom and photoresist compositions suitable for photolithography processes employing a DUV light source, such as KrF (249 nm) and ArF(193 nm); EUV; VUV; E-beam; ion-beam; and X-ray.

Abstract: Photoresist monomers which can be used to form photoresist polymers and photoresist compositions using the same which are suitable for photolithography processes employing a deep ultraviolet light source and copolymers thereof.

Abstract: A novel copolymer useful for photoresist, which allows a formation of patterns showing a significantly improved resolution in a photolithography using ArF (193 nm) light source, is prepared by copolymerizing at least two cycloaliphatic olefins with an amide or imide.

Abstract: The present invention relates to a polymer represented by following Formula 1 and a method of forming a micro pattern using the same: wherein, R is C1-C10 primary or secondary alcohol group; m and n independently represent a number from 1 to 3; and the ratio a:b:c is (10-80)mol %:(10-80)mol %:(10-80)mol %, respectively. The photoresist polymer according to the present invention is suitable for forming an ultra-micro pattern such as used in 4G or 16G DRAM semiconductor devices using a light source such as ArF, an E-beam, EUV, or an ion-beam.

Abstract: The present invention relates to novel monomers for preparing photoresist polymers, polymers thereof, and photoresist compositions using the same.

Abstract: The present invention relates to a polymer represented by following Formula 1 and a method of forming a micro pattern using the same: wherein R1 is a C1-C10 straight- or branched-chain substituted alkyl group, or a benzyl group; R2 is C1-C10 primary, secondary or tertiary alcohol group; m and n independently represent a number from 1 to 3; and X, Y and Z are the respective polymerization ratios of the co-monomers. The photoresist polymer according to the present invention is suitable for forming an ultra-micro pattern such as used in 4 G or 16 G DRAM semiconductor devices using a light source such as ArF, an e-beam, EUV, or an ion-beam.

Abstract: The present invention relates to oxabicyclo compounds and a method of preparing the same. The compounds of the present invention can be used as monomers for preparing a photoresist resin which is useful in photolithography processes using ultra-violet light sources, and are represented by the following Formula 1: ##STR1## wherein, R.sub.1 and R.sub.2 are the same or different, and represent a hydrogen or a C.sub.1 -C.sub.4 straight or branched chain substituted alkyl group; and m is a number from 1 to 4.In other embodiments, the present invention relates to an ArF or a KrF photoresist resin containing an oxabicyclo monomer, and compositions and photoresist micro pattern forming methods using the same.

Abstract: A novel photoresist copolymer, consisting of at least two aliphatic cyclo-olefins and an amine, which is useful for the photolithography using ArF as a light source. The photoresist prepared from the copolymer can be patterned with high resolution.