Patents by Inventor Chi Je PARK

Chi Je PARK has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240115467
    Abstract: A cosmetic having an excellent effect of solidifying sebum is to be provided. A cosmetic is used that includes low aspect ratio zinc oxide having an average aspect ratio of less than 4 and high aspect ratio zinc oxide having an average aspect ratio of 4 or more, wherein an amount of the high aspect ratio zinc oxide blended is 1 to 80 mass % with respect to a total amount of the high aspect ratio zinc oxide and the low aspect ratio zinc oxide.
    Type: Application
    Filed: February 22, 2022
    Publication date: April 11, 2024
    Applicant: SHISEIDO COMPANY, LTD.
    Inventors: Megumi SUGIHARA, Ryo FURUKAWA, Kayoko NAOI, Chi Je PARK
  • Patent number: 11532360
    Abstract: When programming data in a first memory cell in a first memory block in a turbo program mode, the memory device may apply a first number of program pulses to the first memory cell, the first number of program pulses being smaller than the number of program pulses applied to the first memory cell when data is written to the first memory cell when the turbo program mode is reset. When migrating the data written to the first memory cell to a second memory cell in a second memory block, the memory device may apply a second number of program pulses to the second memory cell, the second number of program pulses being larger than the first number of program pulses.
    Type: Grant
    Filed: January 25, 2021
    Date of Patent: December 20, 2022
    Assignee: SK HYNIX INC.
    Inventor: Chi Je Park
  • Publication number: 20220028457
    Abstract: Embodiments of the disclosed technology relate to a memory system, a memory device, and a method for operating the memory device. Based on embodiments of the disclosed technology, when programming data in a first memory cell in a first memory block in a turbo program mode, the memory device may apply a first number of program pulses to the first memory cell, the first number of program pulses being smaller than the number of program pulses applied to the first memory cell when data is written to the first memory cell when the turbo program mode is reset. When migrating the data written to the first memory cell to a second memory cell in a second memory block, the memory device may apply a second number of program pulses to the second memory cell, the second number of program pulses being larger than the first number of program pulses.
    Type: Application
    Filed: January 25, 2021
    Publication date: January 27, 2022
    Inventor: Chi Je PARK