Abstract: The present invention discloses a producing method for an ink composition for forming absorption layers of thin film cells. The ink composition comprising CIGS or CIS nanocrystals and a chelating agent specified for the CIGS or CIS nanocrystals. According to the present invention, the mixture comprising at least two substances selected from the group consisting of Group IB elements, Group IIIA elements, Group VIA elements, salts of Group IB elements, salts of Group IIIA elements and salts of Group VIA elements can be react into a single composition while the existence of the chelating agent. The chelating agent can alternatively be aromatic diamine compounds, alkyl diamine compounds or aliphatic diamine compounds. With the implementation of the present invention, manufacturing the CIGS or CIS films in large scale and simplifying the conventional manufacturing processes are capable of accomplishment.

Abstract: The present invention provides a Cu2ZnSnSe4 (CZTSe) nanoink composition and a CZTSe sputtering target thereof for use in manufacturing an absorption layer of a thin-film solar cell. The CZTSe sputtering target includes a binary multiphase mixture and/or a ternary multiphase mixture. The CZTSe nanoink composition not only includes the binary multiphase mixture and/or ternary multiphase mixture but also includes a chelating agent. Any two of Cu, Zn, Sn, and Se are combined by the chelating agent to form the binary multiphase mixture. Alternatively, any three of Cu, Zn, Sn, and Se are combined by the chelating agent to form the ternary multiphase mixture. By manufacturing the absorption layer of the thin-film solar cell in the aforesaid manner, the absorption layer has a perfect quaternary monophase structure but does not manifest any impure phase detrimental to photoelectric conversion efficiency.

Abstract: The present invention discloses a producing method for an ink composition for forming absorption layers of thin film cells. The ink composition comprising CIGS or CIS nanocrystals and a chelating agent specified for the CIGS or CIS nanocrystals. According to the present invention, the mixture comprising at least two substances selected from the group consisting of Group IB elements, Group IIIA elements, Group VIA elements, salts of Group IB elements, salts of Group IIIA elements and salts of Group VIA elements can be react into a single composition while the existence of the chelating agent. The chelating agent can alternatively be aromatic diamine compounds, alkyl diamine compounds or aliphatic diamine compounds. With the implementation of the present invention, manufacturing the CIGS or CIS films in large scale and simplifying the conventional manufacturing processes are capable of accomplishment.

Abstract: A nanoink composition for forming an absorber layer of a thin film solar cell comprises particles and a volatile chelating agent mixing with the particles. The particles contain one or more elements selected from group IB and/or IIB and/or IVA and/or VIA. In the present invention, the volatile chelating agent is a polyetheramine which can alternatively be monoamine compounds, diamine compounds and triamine compounds and has a molecular weight of from about 100 to about 4,000. Accordingly, the particles can be reacted mutually into a single composition while the existence of the volatile chelating agent.

Abstract: A nanoink composition for forming an absorber layer of a thin film solar cell comprises particles and a volatile chelating agent mixing with the particles. The particles contain one or more elements selected from group IB and/or IIIA and/or VIA. In the present invention, the volatile chelating agent is a polyetheramine which can alternatively be monoamine compounds, diamine compounds and triamine compounds and has a molecular weight of from about 100 to about 4,000. Accordingly, the particles can be reacted mutually into a single composition while the existence of the volatile chelating agent.