Patents by Inventor Chi-Ju HSIAO

Chi-Ju HSIAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10886834
    Abstract: A power converter and a method for receiving an input voltage and providing an output voltage is presented. The power converter has a switching circuit to generate the output voltage. The switching circuit has a first switch, a switch control circuit arranged to selectively operate the first switch in a first state or a second state. There is a ripple reduction circuit to set a first state duration based on a property of a load current. The load current is a current that the power converter provides to a load that is coupled to the output voltage.
    Type: Grant
    Filed: August 31, 2018
    Date of Patent: January 5, 2021
    Assignee: Dialog Semiconductor (UK) Limited
    Inventors: Der Ju Hung, Yu Ta Lin, Yuan Wen Hsiao, Chi-Chia Huang, Chia Wen Tsai
  • Patent number: 10580558
    Abstract: A texture inducing structure for alloy films is provided. The texture inducing structure includes a substrate, a texture-inducing layer and a deposition layer. The texture-inducing layer is formed on the substrate. The texture-inducing layer has an intrinsically strong crystalline texture, a texture coefficient of the texture-inducing layer is greater than 2, and a thickness of the texture-inducing layer is ranged from 0.1 ?m to 6 ?m. The deposition layer is formed on the texture-inducing layer. A texture of the deposition layer is induced by the texture-inducing layer thereby changing the magnetic anisotropy and the magnetic strength of the deposition layer, a thickness of the deposition layer is ranged from 1 ?m˜60 ?m, and the thickness of the deposition layer is greater than that of the texture-inducing layer.
    Type: Grant
    Filed: July 4, 2017
    Date of Patent: March 3, 2020
    Assignee: NATIONAL TSING HUA UNIVERSITY
    Inventors: Chi-Ju Hsiao, Heng-Sheng Hsiao, Jen-Yuan Chang, Tsung-Shune Chin
  • Publication number: 20200006514
    Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region, a second region, a third region, and a fourth region; forming a tuning layer on the second region; forming a first work function metal layer on the first region and the tuning layer of the second region; forming a second work function metal layer on the first region, the second region, and the fourth region; and forming a top barrier metal (TBM) layer on the first region, the second region, the third region, and the fourth region.
    Type: Application
    Filed: September 4, 2019
    Publication date: January 2, 2020
    Inventors: Kuo-Chih Lai, Yun-Tzu Chang, Wei-Ming Hsiao, Nien-Ting Ho, Shih-Min Chou, Yang-Ju Lu, Ching-Yun Chang, Yen-Chen Chen, Kuan-Chun Lin, Chi-Mao Hsu
  • Patent number: 10490643
    Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region, a second region, a third region, and a fourth region; forming a tuning layer on the second region; forming a first work function metal layer on the first region and the tuning layer of the second region; forming a second work function metal layer on the first region, the second region, and the fourth region; and forming a top barrier metal (TBM) layer on the first region, the second region, the third region, and the fourth region.
    Type: Grant
    Filed: November 24, 2015
    Date of Patent: November 26, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Kuo-Chih Lai, Yun-Tzu Chang, Wei-Ming Hsiao, Nien-Ting Ho, Shih-Min Chou, Yang-Ju Lu, Ching-Yun Chang, Yen-Chen Chen, Kuan-Chun Lin, Chi-Mao Hsu
  • Publication number: 20180358159
    Abstract: A texture inducing structure for alloy films is provided. The texture inducing structure includes a substrate, a texture-inducing layer and a deposition layer. The texture-inducing layer is formed on the substrate. The texture-inducing layer has an intrinsically strong crystalline texture, a texture coefficient of the texture-inducing layer is greater than 2, and a thickness of the texture-inducing layer is ranged from 0.1 ?m to 6 ?m. The deposition layer is formed on the texture-inducing layer. A texture of the deposition layer is induced by the texture-inducing layer thereby changing the magnetic anisotropy and the magnetic strength of the deposition layer, a thickness of the deposition layer is ranged from 1 ?m˜60 ?m, and the thickness of the deposition layer is greater than that of the texture-inducing layer.
    Type: Application
    Filed: July 4, 2017
    Publication date: December 13, 2018
    Inventors: Chi-Ju HSIAO, Heng-Sheng HSIAO, Jen-Yuan CHANG, Tsung-Shune CHIN