Patents by Inventor Chi-Jui Lin

Chi-Jui Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210371573
    Abstract: A composition and a material prepared from the composition are provided.
    Type: Application
    Filed: May 25, 2021
    Publication date: December 2, 2021
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chi-Jui LIN, Shin-Liang KUO, Shu-Jiuan HUANG
  • Patent number: 10783818
    Abstract: A dual gate transistor circuit, a pixel circuit, and a gate drive circuit are provided. The dual gate transistor circuit includes a dual gate transistor, a first diode, and a second diode. The dual gate transistor has a first gate and a second gate, and the first gate receives a drive signal. The first diode is connected in series between the first gate and the second gate according to a first-polarity direction. The second diode is connected in series between the first gate and the second gate according to a second-polarity direction. The first-polarity direction is opposite to the second-polarity direction.
    Type: Grant
    Filed: June 13, 2019
    Date of Patent: September 22, 2020
    Assignee: Au Optronics Corporation
    Inventors: Shu-Wei Tsao, Chi-Jui Lin, Shu-Feng Wu, Wei-Sheng Yu
  • Publication number: 20200035139
    Abstract: A dual gate transistor circuit, a pixel circuit, and a gate drive circuit are provided. The dual gate transistor circuit includes a dual gate transistor, a first diode, and a second diode. The dual gate transistor has a first gate and a second gate, and the first gate receives a drive signal. The first diode is connected in series between the first gate and the second gate according to a first-polarity direction. The second diode is connected in series between the first gate and the second gate according to a second-polarity direction. The first-polarity direction is opposite to the second-polarity direction.
    Type: Application
    Filed: June 13, 2019
    Publication date: January 30, 2020
    Applicant: Au Optronics Corporation
    Inventors: Shu-Wei Tsao, Chi-Jui Lin, Shu-Feng Wu, Wei-Sheng Yu
  • Patent number: 8704220
    Abstract: An active device including a source, a drain, an oxide semiconductor layer, a gate and a gate insulator layer is provided. The source includes first stripe electrodes parallel to each other and a first connection electrode connected thereto. The drain includes second stripe electrodes parallel to each other and a second connection electrode connected thereto, wherein the first stripe electrodes and the second stripe electrodes are parallel to each other, electrically isolated, and alternately arranged, and a zigzag trench is formed therebetween. The gate extends along the zigzag trench. The oxide semiconductor layer is in contact with the source and drain, wherein a contact area among the oxide semiconductor layer and each first stripe electrodes substantially equals to a layout area of each first stripe electrodes and a contact area among each second stripe electrodes substantially equals to a layout area of each second stripe electrodes.
    Type: Grant
    Filed: April 12, 2012
    Date of Patent: April 22, 2014
    Assignee: Au Optronics Corporation
    Inventors: Hao-Lin Chiu, Chi-Jui Lin, Shu-Wei Tsao, Chun-Nan Lin, Po-Liang Yeh, Shine-Kai Tseng
  • Publication number: 20130119371
    Abstract: An active device including a source, a drain, an oxide semiconductor layer, a gate and a gate insulator layer is provided. The source includes first stripe electrodes parallel to each other and a first connection electrode connected thereto. The drain includes second stripe electrodes parallel to each other and a second connection electrode connected thereto, wherein the first stripe electrodes and the second stripe electrodes are parallel to each other, electrically isolated, and alternately arranged, and a zigzag trench is formed therebetween. The gate extends along the zigzag trench. The oxide semiconductor layer is in contact with the source and drain, wherein a contact area among the oxide semiconductor layer and each first stripe electrodes substantially equals to a layout area of each first stripe electrodes and a contact area among each second stripe electrodes substantially equals to a layout area of each second stripe electrodes.
    Type: Application
    Filed: April 12, 2012
    Publication date: May 16, 2013
    Applicant: AU OPTRONICS CORPORATION
    Inventors: Hao-Lin Chiu, Chi-Jui Lin, Shu-Wei Tsao, Chun-Nan Lin, Po-Liang Yeh, Shine-Kai Tseng