Abstract: Embodiments of the present invention relate to a method and a system for determining an exposure time of a wafer photolithography process is applied to a wafer photolithography system and is used to determine the preferred exposure time for the L(N) batch production wafer. In one embodiment, at least three batches of the batch test wafers are recalled in a time sequence and the corresponding test values are obtained. A mean value of the test values corresponding to the at least three batches of the batch test wafers is calculated with a predetermined mathematical model. The calculated mean value is compared with a predetermined qualified examination value, and a margin value between the mean value and the qualified examination value is thus determined to adjust and generate an appropriate process exposure time. The preferred process exposure time is then employed as the exposure time of the L(N) batch production wafer.

Abstract: Embodiments of the present invention relate to a method and a system for determining an exposure time of a wafer photolithography process is applied to a wafer photolithography system and is used to determine the preferred exposure time for the L(N) batch production wafer. In one embodiment, at least three batches of the batch test wafers are recalled in a time sequence and the corresponding test values are obtained. A mean value of the test values corresponding to the at least three batches of the batch test wafers is calculated with a predetermined mathematical model. The calculated mean value is compared with a predetermined qualified examination value, and a margin value between the mean value and the qualified examination value is thus determined to adjust and generate an appropriate process exposure time. The preferred process exposure time is then employed as the exposure time of the L(N) batch production wafer.