Abstract: A method of manufacturing a semiconductor device includes forming a multi-layer stack of alternating first layers of a first semiconductor material and second layers of a second semiconductor material on a semiconductor substrate, forming a first recess through the multi-layer stack, and laterally recessing sidewalls of the second layers of the multi-layer stack. The sidewalls are adjacent to the first recess. The method further includes forming inner spacers with respective seams adjacent to the recessed second layers of the multi-layer stack and performing an anneal treatment on the inner spacers to close the respective seams.

Abstract: A method of manufacturing a semiconductor device includes forming a multi-layer stack of alternating first layers of a first semiconductor material and second layers of a second semiconductor material on a semiconductor substrate, forming a first recess through the multi-layer stack, and laterally recessing sidewalls of the second layers of the multi-layer stack. The sidewalls are adjacent to the first recess. The method further includes forming inner spacers with respective seams adjacent to the recessed second layers of the multi-layer stack and performing an anneal treatment on the inner spacers to close the respective seams.

Abstract: A method for constructing an address mapping table of a solid state drive is provided. The address mapping table is stored in a non-volatile memory of the solid state drive. The method includes the following steps. After the solid state drive is powered on, a command from a host is received. Then, a logical allocation address is calculated according to a logical block address corresponding to the command. Then, the calculated logical allocation address is defined as an initial address, and a specified number of logical allocation addresses starting from the initial address and corresponding physical allocation addresses are loaded into a cache memory, so that a first portion of the address mapping table is constructed into the cache memory. Afterwards, the solid state drive responds the command according to the first portion of the address mapping table.