Patents by Inventor Chi-Kuen Lo
Chi-Kuen Lo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7531883Abstract: A magneto-resistance transistor including a magneto-resistant element which may function as an emitter and a passive element which may function as a collector. The base may be interposed between the passive element and the magneto-resistant element, thereby coupling the passive element with the magneto-resistant element. A magnetic field of a given strength may be applied to at least a portion of the magneto-resistant transistor, the given strength determining a resistance in the at least a portion of the magneto-resistant transistor. Thus, by adjusting the given strength of the magnetic field, the resistance may be adjusted. Therefore, different emitter current inputs may be achieved with a fixed voltage. Further, a base current may vary with a controlled variation of the emitter current input.Type: GrantFiled: November 17, 2006Date of Patent: May 12, 2009Assignee: Industrial Technology Research InstituteInventors: Ying-Wen Huang, Chi-Kuen Lo, Yeong-Der Yao, Lan-Chin Hsieh, Jau-Jiu Ju, Der-Ray Huang
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Patent number: 7470551Abstract: A spin transistor and a manufacturing method thereof are provided. The method includes defining a required area on a substrate by lithography; forming a doping area by ion-implantation, and forming a magnetoresistive film on the substrate. Finally, the method produces a spin transistor with the emitter, the base, and the collector in the same plane surface. The manufacturing method integrates the emitter, the base, and the collector into one plane, so that miniaturization of the spin transistor is achieved, and it is advantageous for the integration and subsequent packaging of the spin transistor and integrated circuit elements.Type: GrantFiled: April 24, 2006Date of Patent: December 30, 2008Assignee: Industrial Technology Research InstituteInventors: Ying-Wen Huang, Chi-Kuen Lo, Lan-Chin Hsieh, Der-Ray Huang, Yeong-Der Yao, Jau-Jiu Ju
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Publication number: 20080203504Abstract: A magneto-resistance transistor including a magneto-resistant element which may function as an emitter and a passive element which may function as a collector. The base may be interposed between the passive element and the magneto-resistant element, thereby coupling the passive element with the magneto-resistant element. A magnetic field of a given strength may be applied to at least a portion of the magneto-resistant transistor, the given strength determining a resistance in the at least a portion of the magneto-resistant transistor. Thus, by adjusting the given strength of the magnetic field, the resistance may be adjusted. Therefore, different emitter current inputs may be achieved with a fixed voltage. Further, a base current may vary with a controlled variation of the emitter current input.Type: ApplicationFiled: April 14, 2008Publication date: August 28, 2008Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Ying-Wen Huang, Chi-Kuen Lo, Yeong-Der Yao, Lan-Chin Hsieh, Jau-Jiu Ju, Der-Ray Huang
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Patent number: 7372117Abstract: A magneto-resistance transistor including a magneto-resistant element which may function as an emitter and a passive element which may function as a collector. The base may be interposed between the passive element and the magneto-resistant element, thereby coupling the passive element with the magneto-resistant element. A magnetic field of a given strength may be applied to at least a portion of the magneto-resistant transistor, the given strength determining a resistance in the at least a portion of the magneto-resistant transistor. Thus, by adjusting the given strength of the magnetic field, the resistance may be adjusted. Therefore, different emitter current inputs may be achieved with a fixed voltage. Further, a base current may vary with a controlled variation of the emitter current input.Type: GrantFiled: September 16, 2004Date of Patent: May 13, 2008Assignee: Industrial Technology Research InstituteInventors: Ying-Wen Huang, Chi-Kuen Lo, Yeong-Der Yao, Lan-Chin Hsieh, Jau-Jiu Ju, Der-Ray Huang
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Publication number: 20070166841Abstract: A spin transistor and a manufacturing method thereof are provided. The method includes defining a required area on a substrate by lithography; forming a doping area by ion-implantation, and forming a magnetoresistive film on the substrate. Finally, the method produces a spin transistor with the emitter, the base, and the collector in the same plane surface. The manufacturing method integrates the emitter, the base, and the collector into one plane, so that miniaturization of the spin transistor is achieved, and it is advantageous for the integration and subsequent packaging of the spin transistor and integrated circuit elements.Type: ApplicationFiled: April 24, 2006Publication date: July 19, 2007Inventors: Ying-Wen Huang, Chi-Kuen Lo, Lan-Chin Hsieh, Der-Ray Huang, Yeong-Der Yao, Jau-Jiu Ju
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Patent number: 7235851Abstract: A spin transistor uses a single potential barrier structure to increase a current fluctuation rate. The spin transistor may include at least one of an emitter, a collector, a base and a base resistor. The emitter may be a magneto-resistant device, which may provide an adjustable resistance based on a magnetic field. The collector may be a passive device which may provide the single potential barrier. The base may placed between the emitter and the collector, and may couple the emitter with the collector. The base resistor may be connected to the base in order to provide a bias.Type: GrantFiled: September 16, 2004Date of Patent: June 26, 2007Assignee: Industrial Technology Research InstituteInventors: Ying-Wen Huang, Chi-Kuen Lo, Lan-Chin Hsieh, Yeong-Der Yao, Der-Ray Huang, Jau-Jiu Ju
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Publication number: 20070063298Abstract: A magneto-resistance transistor including a magneto-resistant element which may function as an emitter and a passive element which may function as a collector. The base may be interposed between the passive element and the magneto-resistant element, thereby coupling the passive element with the magneto-resistant element. A magnetic field of a given strength may be applied to at least a portion of the magneto-resistant transistor, the given strength determining a resistance in the at least a portion of the magneto-resistant transistor. Thus, by adjusting the given strength of the magnetic field, the resistance may be adjusted. Therefore, different emitter current inputs may be achieved with a fixed voltage. Further, a base current may vary with a controlled variation of the emitter current input.Type: ApplicationFiled: November 17, 2006Publication date: March 22, 2007Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Ying-Wen Huang, Chi-Kuen Lo, Yeong-Der Yao, Lan-Chin Hsieh, Jau-Jiu Ju, Der-Ray Huang
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Publication number: 20060054931Abstract: A magneto-resistance transistor including a magneto-resistant element which may function as an emitter and a passive element which may function as a collector. The base may be interposed between the passive element and the magneto-resistant element, thereby coupling the passive element with the magneto-resistant element. A magnetic field of a given strength may be applied to at least a portion of the magneto-resistant transistor, the given strength determining a resistance in the at least a portion of the magneto-resistant transistor. Thus, by adjusting the given strength of the magnetic field, the resistance may be adjusted. Therefore, different emitter current inputs may be achieved with a fixed voltage. Further, a base current may vary with a controlled variation of the emitter current input.Type: ApplicationFiled: September 16, 2004Publication date: March 16, 2006Inventors: Ying-Wen Huang, Chi-Kuen Lo, Yeong-Der Yao, Lan-Chin Hsieh, Jau-Jiu Ju, Der-Ray Huang
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Publication number: 20060054930Abstract: A spin transistor uses a single potential barrier structure to increase a current fluctuation rate. The spin transistor may include at least one of an emitter, a collector, a base and a base resistor. The emitter may be a magneto-resistant device, which may provide an adjustable resistance based on a magnetic field. The collector may be a passive device which may provide the single potential barrier. The base may placed between the emitter and the collector, and may couple the emitter with the collector. The base resistor may be connected to the base in order to provide a bias.Type: ApplicationFiled: September 16, 2004Publication date: March 16, 2006Inventors: Ying-Wen Huang, Chi-Kuen Lo, Lan-Chin Hsieh, Yeong-Der Yao, Der-Ray Huang, Jau-Jiu Ju
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Publication number: 20020025619Abstract: This specification disclosed a multilayer film structure of a tunneling magneto-resistor and the manufacturing of the same, the structure being able to increase the tunneling magneto-resistance (TMR) ratio and to decrease the difficulty in manufacturing. The multilayer film structure disclosed herein forms, in a three-layer film structure composed of two layers of ferromagnetic films and an insulating layer provided in between, a layer of moderately thick ferromagnetic metal insertion between one of the ferromagnetic film and the insulating layer. Through the insertion the tunneling magneto-resistance ratio can be greatly increased and the thickness of the insulating layer is increased to the range where the manufacturing difficulty is lowered.Type: ApplicationFiled: December 19, 2000Publication date: February 28, 2002Inventors: Chi-Kuen Lo, Chia-Hwo Ho, Minn-Tsong Lin, Yeong-Der Yao, Der-Ray Huang