Abstract: Disclosed is a method for manufacturing a template. The method includes growing a first nitride layer containing a Group-III material on a substrate; forming a plurality of etch barriers having different etching characteristics from the first nitride layer on the first nitride layer; forming a pillar-shaped nano structure by etching the first nitride layer in a pattern of the etch barriers using a chloride-based gas; and forming the nitride buffer layer having a plurality of voids formed therein by growing a second nitride layer on top of the nano structure. A method for manufacturing a nitride-based semiconductor light emitting device using the template is also disclosed.

Abstract: Disclosed herein is a method for manufacturing a template. The method includes growing a first nitride layer on a substrate; etching a top surface of the first nitride layer by supplying a chloride-based etching gas thereto; forming a plurality of first voids by growing a second nitride layer on the top surface of the first nitride layer; etching a top surface of the second nitride layer by supplying the etching gas thereto; and forming a plurality of second voids by growing a third nitride layer on the top surface of the second nitride layer. A method for manufacturing a nitride-based semiconductor light emitting device using the template is also disclosed. As a result, stress between lattices and dislocation defects are reduced by a plurality of voids formed in a nitride buffer layer, thereby improving quality of nitride layers grown in a template.

Abstract: The present invention relates to III-nitride semiconductor light emitting device and a method for fabricating the same. The III-nitride semiconductor light emitting device includes: a substrate; a plurality of III-nitride semiconductor layers grown over the substrate and including an active layer for generating light by recombination of electrons and holes; and a protrusion formed on a surface of the substrate over which the semiconductor layers are to be grown, a section of the protrusion which is in parallel to the growth direction of the semiconductor layers being formed in a triangular shape.

Abstract: The present disclosure relates to a III-nitride semiconductor light emitting device, including: a substrate; a plurality of III-nitride semiconductor layers grown over the substrate and including an active layer generating light by recombination of electrons and holes; a scattering surface provided on the substrate to scatter the light generated in the active layer; and a sub-scattering portion ruggedly formed on the scattering surface.