Abstract: An power-saving amplifying device is disclosed, the power-saving amplifying device uses a micro controller unit (MCU) to receive a control signal transmitted by a volume controller and to generate a decision signal based on the control signal; the MCU transmits the decision signal to the volume controlling circuit for obtaining a drive signal, then the volume controlling circuit transmits the drive signal to a power amplifier for driving a speaker to output a sound with a required volume; the MCU also calculates an output value of a PWM signal and transmits the PWM signal to a DC integrating circuit for rectifying and integrating the PWM signal into a DC voltage; the DC voltage is coupled with a voltage control terminal of the power supply to increase or decrease the DC voltage outputted by the power supply to the power amplifier, thereby reducing power consumption by using the volume to control the output voltage of the power supply.

Abstract: An power-saving amplifying device is disclosed, the power-saving amplifying device uses a micro controller unit (MCU) to receive a control signal transmitted by a volume controller and to generate a decision signal based on the control signal; the MCU transmits the decision signal to the volume controlling circuit for obtaining a drive signal, then the volume controlling circuit transmits the drive signal to a power amplifier for driving a speaker to output a sound with a required volume; the MCU also calculates an output value of a PWM signal and transmits the PWM signal to a DC integrating circuit for rectifying and integrating the PWM signal into a DC voltage; the DC voltage is coupled with a voltage control terminal of the power supply to increase or decrease the DC voltage outputted by the power supply to the power amplifier, thereby reducing power consumption by using the volume to control the output voltage of the power supply.

Abstract: A method of forming a narrow diameter opening in an insulator layer, featuring a vertical shape profile, has been developed. Using a photoresist shape as an etch mask a first plasma procedure is used to form an initial opening, with a tapered profile shape, in the insulator layer exposing a portion of the top surface of an underlying stop layer. The first plasma procedure results in formation of a thin polymer layer located at the bottom of the initial opening. A second plasma procedure performed in situ, results in deposition of additional polymer layer, comprised of carbon and fluorine, at the bottom of the initial opening. This is followed by a third plasma procedure, performed in situ in an oxygen plasma, removing polymer and releasing fluorine based radicals which etch portions of insulator layer exposed at the bottom of the initial opening, resulting in a final opening featuring a vertical profile shape.